Patents by Inventor Jiong Chen
Jiong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7675050Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.Type: GrantFiled: June 7, 2007Date of Patent: March 9, 2010Assignee: Advanced Ion Beam Technology, Inc.Inventor: Jiong Chen
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Publication number: 20090194704Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.Type: ApplicationFiled: May 23, 2008Publication date: August 6, 2009Inventors: Nai-Yuan CHENG, Yun-Ju Yang, Cheng-Hui Shen, Junhua Hong, Jiong Chen, Tienyu Sheng, Linuan Chen
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Publication number: 20090189096Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.Type: ApplicationFiled: August 19, 2008Publication date: July 30, 2009Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Jiong CHEN, Nicholas R. White
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Publication number: 20090090876Abstract: To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.Type: ApplicationFiled: October 8, 2007Publication date: April 9, 2009Applicant: Advanced Ion Beam Technology, Inc.Inventors: Cheng-Hui Shen, Donald Wayne Berrian, Jiong Chen
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Publication number: 20080310369Abstract: A method and system for fast handover in hierarchical mobile IPv6 includes: a mobile node which transmits a proxy route request message to a previous access router of the mobile node according to a handover expectation provided by the link layer, the previous access router transmits a network prefix information of a new access router of the mobile node to the mobile node; the mobile node which generates new care-of address according to the network prefix information; after the mobile node moves to a target network, an optimistic duplicate address detection is performed on the care-of address. The disclosure can simplify the handover procedure of hierarchical mobile IPV6 of the mobile node, reduce the signaling interaction in handover process, and shorten handover delay.Type: ApplicationFiled: August 25, 2008Publication date: December 18, 2008Applicants: HUAWEI TECHNOLOGIES CO., LTD., ZHEJIANG UNIVERSITYInventors: Xuezeng PAN, Jun GUAN, Lingdi PING, Jiong CHEN, Defeng LI
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Patent number: 7462843Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.Type: GrantFiled: August 22, 2005Date of Patent: December 9, 2008Assignee: Advanced ION Bean Technology Inc.Inventors: Jiong Chen, Nicholas R. White
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Publication number: 20080230712Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: ApplicationFiled: March 21, 2008Publication date: September 25, 2008Applicant: Advanced Ion Beam Technology, Inc.Inventor: Jiong Chen
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Publication number: 20080029716Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.Type: ApplicationFiled: June 7, 2007Publication date: February 7, 2008Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventor: Jiong CHEN
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Patent number: 7326941Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.Type: GrantFiled: August 22, 2005Date of Patent: February 5, 2008Assignee: Advanced Ion Beam Technology, Inc.Inventors: Jiong Chen, Nicholas R. White
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Patent number: 7112789Abstract: The present invention provides a windowframe magnet having an aligned array of paired bedstead coils in mirror symmetry can bend a high aspect ratio ribbon ion beam through angle of not less than about 45 degrees and not more than about 110 degrees, and can focus it through a resolving slot for mass analysis. The long transverse axis of the beam, which can exceed 50% of the bend radius, is aligned with the generated magnetic field. The array of paired bedstead coils provide tight control of the fringing fields, present intrinsically good field uniformity, and enable a manufacture of much lighter construction than other magnet styles conventionally in use in the ion implantation industry. Within the system of the present invention, the ribbon beam is refocused with low aberration to achieve high resolving power, which is of significant value in the ion implantation industry. System size is further reduced by using a small ion source and a quadrupole lens to collimate the beam after expansion and analysis.Type: GrantFiled: May 6, 2005Date of Patent: September 26, 2006Inventors: Nicholas R. White, Jiong Chen
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Publication number: 20060163490Abstract: An ion implantation cooling system at least comprises a semiconductor substrate utilized as the ion implantation substrate, a Pelier thermoelectric pump connected with the semiconductor substrate for heat irradiation during the ion implantation, and a heatsink connected to the Pelier thermoelectric pump for heat irradiation from a hot Pelier surface during the ion implantation. The cooling system is to employ the Pelier thermoelectric pump enabling the semiconductor substrate and the semiconductor substrate surface being at a temperature lower than that of the heatsink, so the object of proceeding ion implanting at a lower temperature can be achieved thereby.Type: ApplicationFiled: January 19, 2006Publication date: July 27, 2006Inventors: Daniel Tang, Jiong Chen, Wei-Cheng Lin
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Publication number: 20060113494Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.Type: ApplicationFiled: August 22, 2005Publication date: June 1, 2006Inventors: Jiong Chen, Nicholas White
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Publication number: 20060113495Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.Type: ApplicationFiled: August 22, 2005Publication date: June 1, 2006Inventors: Jiong Chen, Nicholas White
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Publication number: 20060102080Abstract: An ion implanter includes a wafer pad for supporting wafer thereon. The wafer pad is covered by a wafer coating having at least two layers with each layer composed of a different coating material. The top layer may be PTFE, PFA, FEP, or TEFLON polymer layer. The bottom layer may be a layer that is composed of a soft material with a low duometer reading or a vulcanized elastormer layer, or a silicon layer serving the function as a cushion layer. In general, the top layer is a protective layer that has a friction coefficient less than 0.6 and having a roughness less than 0.4 micron when operated in the implanter for loading and unloading the wafer from the wafer pad.Type: ApplicationFiled: December 2, 2004Publication date: May 18, 2006Inventors: Gary Liu, Jiong Chen
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Publication number: 20050258380Abstract: The present invention provides a windowframe magnet having an aligned array of paired bedstead coils in mirror symmetry can bend a high aspect ratio ribbon ion beam through angle of not less than about 45 degrees and not more than about 110 degrees, and can focus it through a resolving slot for mass analysis. The long transverse axis of the beam, which can exceed 50% of the bend radius, is aligned with the generated magnetic field. The array of paired bedstead coils provide tight control of the fringing fields, present intrinsically good field uniformity, and enable a manufacture of much lighter construction than other magnet styles conventionally in use in the ion implantation industry. Within the system of the present invention, the ribbon beam is refocused with low aberration to achieve high resolving power, which is of significant value in the ion implantation industry. System size is further reduced by using a small ion source and a quadrupole lens to collimate the beam after expansion and analysis.Type: ApplicationFiled: May 6, 2005Publication date: November 24, 2005Inventors: Nicholas White, Jiong Chen
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Patent number: 6946667Abstract: An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.Type: GrantFiled: November 19, 2002Date of Patent: September 20, 2005Assignee: Advanced Ion Beam Technology, Inc.Inventors: Jiong Chen, Zhming Wan, Qing Qian
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Patent number: 6918351Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.Type: GrantFiled: April 26, 2002Date of Patent: July 19, 2005Assignee: Advanced Ion Beam Technology, Inc.Inventors: Jiong Chen, Zhimin Wan
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Patent number: 6865065Abstract: A method and system for processing wafers is disclosed. According to one embodiment (100) a chuck system (102) may be situated opposite to an input source (104). A chuck system (102) may apply a force (e.g., mechanical and/or electromagnetic) that deforms a substrate (108). Once deformed, essentially all of a substrate (108) may be oriented at a predetermined angle (e.g., 90°) with respect to an input source (104).Type: GrantFiled: January 22, 2002Date of Patent: March 8, 2005Assignee: Advanced Ion Beam Technology, Inc.Inventors: Jiong Chen, Jihliang Chen, Jianmin Qiao
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Publication number: 20050019697Abstract: A photoresist layer is preprocessed by carrying out an ion beam implantation onto a patterned photoresist layer with conductive ions. The conductive ions may comprise ions of carbon, SB, indium, silicon, or other metallic/semiconductor atoms/molecules. The ion implantation is carried out by applying ion beams of energy lower than 1000 ev such that the pre-process implantation would not cause any alterations to the profile or layer structure of the photoresist layer. In order to assure sufficient conductivity is achieved in the photoresist layer, it is desirable that a high dose of implanting ion beam is used, preferable having a ion dosage in a range of 1016/cm2 to 1018/cm2. A large quantity of resist out-gassing would occur during the high dose implants. Wafers with resist patterns can thus be subject to electron beam inspections without the problems of electric charging and photoresist out-gassing.Type: ApplicationFiled: July 24, 2003Publication date: January 27, 2005Inventors: Daniel Tang, Jiong Chen
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Publication number: 20040244692Abstract: An ion implantation method is disclosed that includes a step of carrying out a built-in early check to ensure accurate and correct operation parameters are employed when the setup operation is started. By applying built-in check processes, the repeatability of ion beam setup processes can be enhanced. The ion beam setup method includes a formula-based searching algorithm to accurately and rapidly determines the atomic mass unit (AMU) using a feedback data other than the beam current. The same formula is used to check for subsystems consistency and reliability to ensure accuracy of the ion beam being set up. The searching algorithm further implements a peaking algorithm to avoid the common pitfalls of misinterpretation of data and achieve an accurate, reliable, and fast tuning with the help of “Trusty Recipes” as initial conditions and “Limits Parameters” as constraints.Type: ApplicationFiled: June 4, 2003Publication date: December 9, 2004Applicant: Advanced Ion Beam Technology, Inc.Inventors: Jiong Chen, Simeon K. S. Ma