Abstract: A method to rotate individual pad of a batch disk to an implant angle and lock them in place, with the pad surface having conical or near conical surface to minimize the implant angle variation across a wafer on the pad for both tilt angle and twist angle, at large tilt angle implant. The implanter includes a disk with multiple attached pads that can hold substrates securely when the hub is at rest or rotates. The disk rotates around its spin axis, which moves laterally at a programmed speed profile so that all substrates on the hub can get evenly touched by the fixed ion beam. The pad rotation axis is at an angle with the disk spin axis, and the angle is preferable 90 degrees. The nominal of the pad surface is at an angle, i.e., a tilt angle, relative to the incident ion beam. A rotation mechanism is applied to each individual pad to rotate the pad to the desired tilt angle.

Abstract: An ion implantation method for reducing energy contamination in low energy beams is disclosed in this invention. The ion implantation method requires the use of a target chamber for containing a target for implantation in vacuum and an ion source chamber with an ion source for generating an ion beam. A means for conducting a mass analysis of the ion beam, such as an analyzer magnet, is also needed. The ion source chamber includes a beam deceleration optics that includes a beam deceleration means for decelerating the ion beam for producing a low energy ion beam. The beam deceleration optics further includes a beam steering means for generating an electrostatic field for steering the ion beam to a targeted ion-beam direction and separating neutralized particles from the ion beam by allowing the neutralized particles to transmit in a neutralized-particle direction slightly different from the targeted ion-beam direction.

Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction means for extracting an ion beam therefrom. The ion implantation apparatus further includes an ion beam sweeping-and-deflecting means disposed immediately next to the ion extraction means. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping means. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting means is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: An apparatus for ion implantation using high perveance beams is disclosed. The apparatus includes a dipole magnet apparatus that provides an adjustment to a cross-beam magnetic dipole field in an ion implantation system. Introduction and control of the magnetic dipole field gradient in a low energy implantation system as disclosed herein gives a significant improvement to the magnet's acceptance and beam focusing which largely defines the effective transported beam current. The apparatus involves the use of ferromagnetic yokes of a prescribed shape and a portion of a secondary magnet coil following along the outside radius of a set of primary dipole magnet coils which define and delineate the primary magnetic field area and beam path. The current return path for the secondary magnet coil is via another portion of the secondary magnet coil that follows a path such that the field generated by the return path secondary magnet coil is orthogonal to the primary magnetic field.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

Abstract: A new radio frequency (rf) linear accelerator (linac) is disclosed in this invention. The rf linac includes a plurality of resonators each includes an inductor circuit L(k), k=1,2,3, . . . , n′ where n′ is a second integer, wherein the inductor circuit connected to at least two electrodes E(j′), j′=1,2,3, . . . (n−1), for applying an accelerating rf voltage thereto. The rf linac further includes a plurality sets of transverse focusing lenses, represented by Lenses(j), where j=1,2,3, . . . n, and n is an integer, for guiding and focusing an ion beam. Each of the electrodes E(j′) disposed between and aligned with two sets of the transverse focusing lenses Lenses(J′) and Lenses(J′+1), j′=1,2,3, . . . (n−1), as a linear array. In a preferred embodiment, at least two of the adjacent electrodes E(j′) and E(j′+1) are connected to a same inductor circuit L(k).

Abstract: The present invention provides a method of extending, i.e. prolonging, the operating lifetime of hot cathode discharge ion source by utilizing and introducing a nitrogen-containing co-bleed gas into an ion implantation apparatus which contains at least a hot cathode discharge ion source and an ion implantation gas such as GeF4.

Abstract: A filament (18) for an ion implanter ion source or plasma shower is provided comprising first and second legs (20a, 20b) and a thermally emissive central portion (40) having ends connected, respectively, to the first and second legs. Preferably, the legs (20a, 20b) are constructed from tantalum (Ta), and the thermally emissive portion (40) is constructed of tungsten (W). The thermally emissive portion is coiled substantially along the entire length thereof and formed in the shape of a generally closed loop, such as a toroid. The toroid is comprised of two toroid halves (40a, 40b) coiled in opposite directions. The toroid halves are constructed of a plurality of filament strands (42, 44, 46) twisted together along substantially the entire length thereof. The coils of the toroid are capable of establishing closed loop magnetic field lines (B) therein when electrical current flows through the thermally emissive portion.

Abstract: Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.

Abstract: A process is provided for converting waste biomass to useful products by gasifying the biomass to produce synthesis gas and converting the synthesis gas substrate to one or more useful products. The present invention is directed to the conversion of biomass wastes including municipal solid waste, sewage sludge, plastic, tires, agricultural residues and the like, as well as coal, to useful products such as hydrogen, ethanol and acetic acid. The overall process includes the steps of gasifying the waste biomass to produce raw synthesis gas, cooling the synthesis gas, converting the synthesis gas to the desired product or products using anaerobic bioconversion, and then recovering the product or products. In accordance with a particular embodiment of the present invention, waste biomass is converted to synthesis gas containing carbon monoxide and, then, the carbon monoxide is converted to hydrogen by an anaerobic microorganism ERIH2, bacillus smithii ATCC No. 55404.

Abstract: An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam.

Abstract: Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.