Abstract: A display device includes: a backlight unit, a camera hole penetrating the backlight unit, a camera in the camera hole, a liquid crystal panel on the backlight unit, the liquid crystal panel including a transparent portion on the camera hole, and at least one light-blocking member in the camera hole, the at least one light-blocking member being configured to reduce one or more of: light leakage from the camera hole and introduction of impurities into the camera hole.

Abstract: Provided is a strain sensor. The strain sensor according to embodiments of the inventive concept includes a flexible substrate, rigid patterns on the flexible substrate, the rigid patterns including a first pattern and a second pattern spaced apart from the first pattern in a first direction, a first electrode on the first pattern, a second electrode on the second pattern, the second electrode being spaced apart from the first electrode, and a piezoresistive layer connecting the first electrode and the second electrode. Here, each of the rigid patterns may have a stiffness greater than that of the flexible substrate.

Abstract: Provided is a method for synthesizing bipyridine that includes performing a dimerization reaction of a reactant including a piperidine-based compound, a pyridine-based compound, or a mixture thereof in the presence of a catalyst in which an active metal is supported on a composite metal oxide support including silica (SiO2) and alumina (Al2O3).

Abstract: An electronic device for controlling a speaker and an operating method thereof are provided. The electronic device includes an audio output apparatus, and a processor configured to, according to a type of a first sound source to be output through the audio output apparatus, control an output of the audio output apparatus to output a first sound corresponding to the first sound source so as to be focused on a first area.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

Abstract: A method and system for operating an electronic apparatus includes: implementing, by a first processor, a main process of the electronic apparatus; receiving a user input for controlling an operation of at least one element (e.g., camera, memory, microphone, or the like) configured to perform at least one function; and in response to a received user input, controlling power of the at least one element by using at least a second processor separate from the first processor.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

Abstract: A method and system for operating an electronic apparatus includes: implementing, by a first processor, a main process of the electronic apparatus; receiving a user input for controlling an operation of at least one element (e.g., camera, memory, microphone, or the like) configured to perform at least one function; and in response to a received user input, controlling power of the at least one element by using at least a second processor separate from the first processor.

Abstract: An electronic device for controlling a speaker and an operating method thereof are provided. The electronic device includes an audio output apparatus, and a processor configured to, according to a type of a first sound source to be output through the audio output apparatus, control an output of the audio output apparatus to output a first sound corresponding to the first sound source so as to be focused on a first area.

Abstract: A method of analyzing a program code of an electronic device includes configuring a tree by using a key string included in the program code and; in response to a command to find a specific key being received, performing a predetermined order traversal of the tree by using a string included in the specific key; in response to a node which matches a last string included in the specific key having a leaf node as a result of the predetermined order traversal, returning a value of the leaf node; and analyzing the program code by using the return value.

Abstract: An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract: A shielding unit for a plating apparatus may include a shielding plate, a controlling plate and a rotary actuator. The shielding plate may have a plurality of holes configured to permit a passage of an electrolyte therethrough. The controlling plate may make contact with the shielding plate. The controlling plate may have a plurality of controlling holes for controlling an opening ratio of the plurality of holes of the shielding plate. The rotary actuator may rotate the controlling plate to control the opening ratio of the plurality of holes shielding plate.

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract: Provided is a semiconductor device. The semiconductor device includes a passivation layer defining a metal pattern on a first surface of a substrate, an inter-layer insulating layer disposed on a second surface of the substrate, and a piezoelectric pattern formed between the metal pattern and the passivation layer on the first surface of the substrate. A through-silicon-via and/or a pad can be directly bonded to another through-silicon-via and/or another pad by applying pressure only, and without performing a heat process.

Abstract: Disclosed is a method of manufacturing a semiconductor device. A preliminary wafer-carrier assembly is formed in such a way that a wafer structure having a plurality of via structures is adhered to a light-penetrating carrier by a photodegradable adhesive. A wafer-carrier assembly having an optical shielding layer for inhibiting or preventing a light penetration is formed such that the wafer structure, the carrier and the adhesive are covered with the optical shielding layer except for the backside of the wafer structure through which the via structures are exposed. An interconnector is formed on the backside of the wafer structure such that the via structures make contact with the interconnector, and the wafer structure and the carrier are separated from each other by irradiating a light to the wafer-carrier assembly. Accordingly, the adhesive is inhibited or prevented from being dissolved during a plasma process on the wafer-carrier assembly.

Abstract: An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.

Abstract: A method of analyzing a program code of an electronic device includes configuring a tree by using a key string included in the program code and; in response to a command to find a specific key being received, performing a predetermined order traversal of the tree by using a string included in the specific key; in response to a node which matches a last string included in the specific key having a leaf node as a result of the predetermined order traversal, returning a value of the leaf node; and analyzing the program code by using the return value.

Abstract: A method for generating a transport stream of a server is provided. The method for generating a transport stream of a server which sends broadcasting content to a client device comprises: scrambling broadcasting content by using a specific key; adding at least one content-encryption message which includes the specific key and a device key for obtaining the specific key from the at least one content-encryption message to the broadcasting content so as to generate a transport stream; and sending the generated transport stream to the client device.