Abstract: A device comprising a silicon substrate and a waveguide on the silicon substrate. A groove is in the substrate, the groove having a sloped rear wall adjacent to the waveguide. A trench is in the substrate, the trench along a second direction generally orthogonal to the first direction across the sloped rear wall, the trench having a vertical wall at an intersection with the sloped rear wall. An optical fiber in the groove with one end of the optical fiber abutting the vertical wall.

Abstract: Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed to low numerical aperture (NA) optical couplers, or spot size converters, that include a lateral taper section and/or a vertical adiabatic taper section. In embodiments, the optical couplers may be positioned on a silicon substrate proximate to V-grooves within the substrate to contain optical fibers to self-align and to couple with the optical couplers. Other embodiments may be described and/or claimed.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.

Abstract: Embodiments of the present disclosure are directed to low numerical aperture (NA) optical couplers, or spot size converters, that include a lateral taper section and/or a vertical adiabatic taper section. In embodiments, the optical couplers may be positioned on a silicon substrate proximate to V-grooves within the substrate to contain optical fibers to self-align and to couple with the optical couplers. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a core where the core comprises glass. In an embodiment, the package substrate further comprises an optical waveguide over the core, and an optical phase change material over the optical waveguide.

Abstract: Embodiments disclosed herein include through silicon waveguides and methods of forming such waveguides. In an embodiment, a through silicon waveguide comprises a substrate, where the substrate comprises silicon. In an embodiment, a waveguide is provided through the substrate. In an embodiment, the waveguide comprises a waveguide structure. and a cladding around the waveguide structure.

Abstract: Embodiments disclosed herein include a photonics module and methods of forming photonics modules. In an embodiment, the photonics module comprises a waveguide, and a modulator adjacent to the waveguide. In an embodiment, the modulator comprises a PN junction with a P-doped region and an N-doped region, where the PN junction is vertically oriented so that the P-doped region is over the N-doped region.

Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

Abstract: Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

Abstract: Embodiments disclosed herein include optoelectronic systems and methods of forming such systems. In an embodiment the optoelectronic system comprises a board, and a carrier attached to the board. In an embodiment, a first die is on the carrier. In an embodiment, the first die is a photonics die, and a surface of the first die is covered by an optically transparent layer.

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of microelectronic sub-assemblies arranged in an array; and a plurality of photonic integrated circuit (PIC) dies, each PIC die having waveguides. Adjacent microelectronic sub-assemblies are coupled to one of the PIC dies by interconnects such that any one PIC die is coupled to more than two adjacent microelectronic sub-assemblies, and the microelectronic sub-assemblies coupled to each PIC die in the plurality of PIC dies are communicatively coupled by the waveguides in the PIC die. Each microelectronic sub-assembly comprises: an interposer integrated circuit (IC) die comprising one or more electrical controller circuit proximate to at least one edge of the interposer IC die; a first plurality of IC dies coupled to a first surface of the interposer IC die; and a second plurality of IC dies coupled to an opposing second surface of the interposer IC die.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for a silicon lens manufactured on a 110-oriented silicon wafer that includes highly accurate vertical alignment features on the edges of the silicon lens created using crystallographic etching. In embodiments, these vertical alignment features are revealed 111 planes in the silicon wafer. Other embodiments may be described and/or claimed.

Abstract: An electronic device comprises a photonic integrated circuit (PIC) including at least one optical signal source, an emitting lens disposed on the PIC to steer light emitted by the at least one optical signal source in a direction substantially parallel to a first surface of the PIC, and an optical element disposed on the PIC and having a curved surface in a shape of a quarter cylinder that is configured to steer light emitted from the emitting lens in a direction substantially orthogonal to the first surface of the PIC.

Abstract: An electronic device comprises a photonic integrated circuit (PIC) including at least one waveguide, an emitting lens disposed on the PIC to emit light from the at least one waveguide in a direction substantially parallel to a first surface of the PIC, and an optical element disposed on the PIC and having a reflective surface configured to direct light emitted from the emitting lens in a direction away from the first surface of the PIC.

Abstract: Described herein are IC devices that include hybrid lasers formed with a bonding layer. Hybrid lasers include an active light-emitting region coupled to a waveguide. In a hybrid laser, the waveguide and the light-emitting regions are formed separately from different materials, e.g., the waveguide is a single-crystal silicon, and the light-emitting region includes III-V semiconductors. An amorphous group IV material, such as silicon or germanium, is advantageously used to bond the light-emitting region to the waveguide.

Abstract: Embodiments herein relate to an apparatus for use in a hybrid laser. The apparatus may include a silicon substrate and a waveguide to facilitate transmission of an optical signal in a first direction that is orthogonal to a surface of the silicon substrate. The apparatus may further include a metal shunt that is less than or equal to 10 micrometers from the waveguide in a second direction that is orthogonal to the surface of the silicon substrate and orthogonal to the first direction. Other embodiments may be described and/or claimed.

Abstract: Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.