Abstract: A container for containing food or liquid is provided. The container includes a body portion, a lid and an attachment. The lid is detachably disposed on the body portion. The attachment includes a magnetic attraction member and a connecting structure. The magnetic attraction member is independent from the lid and adapted to be magnetically connected to a mobile electronic device. The connecting structure is disposed between the magnetic attraction member and the container for selectively fixing the magnetic attraction member at a first position or a second position. At least a portion of the connecting structure is fixed to the container.

Abstract: A method for permission management includes: generating a plurality of job roles with different permissions according to organization permission table; generating first permission structure directed graph according to the job roles; selecting one of the job roles in first permission structure directed graph as target job role; generating minimum directed spanning graph in first permission structure directed graph according to target job role; determining whether permission of each of the job roles in first permission structure directed graph matches job of each of the job roles in first permission structure directed graph; and adjusting permission and job of each of the job roles to generate second permission structure directed graph if it is determined that permission of each of the job roles in first permission structure directed graph does not match job of each of the job roles in first permission structure directed graph.

Abstract: A container for containing food or liquid is provided. The container includes a body portion, a lid and an attachment. The lid is detachably disposed on the body portion. The attachment is configured to be disposed on the lid or the body portion and includes a magnetic attraction member and a connecting structure. The magnetic attraction member is adapted to be magnetically connected to a mobile electronic device. The connecting structure is disposed between the magnetic attraction member and the container for selectively fixing the magnetic attraction member at a first position or a second position. The connecting structure includes a fastening member, and the fastening member is adapted to be detachably fastened to the body portion or the lid.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A dynamic calibration method for heterogeneous sensors includes: sensing dynamic objects by a first sensor to generate first sensing data; sensing the dynamic objects by a second sensor to generate second sensing data; performing feature matching between the first sensing data and the second sensing data to determine first valid data and second valid data, and identifying a tracked object from the dynamic objects based on the first valid data and the second valid data; performing feature comparison between the first valid data and the second valid data corresponding to the tracked object to calculate data errors between the first sensor and the second sensor; and calculating a calibration parameter based on the first valid data and the second valid data when the number of the data errors exceeds an error threshold, and adjusting the first sensing data and the second sensing data based on the calibration parameter.

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: A semiconductor package includes a conductive pillar and a solder. The conductive pillar has a first sidewall and a second sidewall opposite to the first sidewall, wherein a height of the first sidewall is greater than a height of the second sidewall. The solder is disposed on and in direct contact with the conductive pillar, wherein the solder is hanging over the first sidewall and the second sidewall of conductive pillar.

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.

Abstract: A transmission device includes a daisy chain structure composed of at least three daisy chain units arranged periodically and continuously. Each of the daisy chain units includes first, second and third conductive lines, and first and second conductive pillars. The first and second conductive lines at a first layer extend along a first direction and are discontinuously arranged. The third conductive line at a second layer extends along the first direction and is substantially parallel to the first and second conductive lines. The first conductive pillar extends in a second direction. The second direction is different from the first direction. A first part of the first conductive pillar is connected to the first and third conductive lines. The second conductive pillar extends in the second direction. A first part of the second conductive pillar is connected to the second and third conductive lines.

Abstract: A semiconductor structure includes a semiconductor element and a first bonding structure. The semiconductor element has a first surface and a second surface opposite to the first surface. The first bonding structure is disposed adjacent to the first surface of the semiconductor element, and includes a first electrical connector, a first insulation layer surrounding the first electrical connector and a first conductive layer surrounding the first insulation layer.

Abstract: Electrodeposited copper foils having adequate puncture strength to withstand both pressure application during consolidation with negative electrode active materials during manufacture, as well as expansion/contraction during repeated charge/discharging cycles when used in a rechargeable secondary battery are described. These copper foils find specific utility as current collectors in rechargeable secondary batteries, particularly in lithium secondary battery with high capacity. Methods of making the copper foils, methods of producing negative electrode for use in lithium secondary battery and lithium secondary battery of high capacity are also described.

Abstract: Provided are an electrolytic copper foil, an electrode and a lithium-ion cell comprising the same. The electrolytic copper foil has a first surface and a second surface opposite the first surface. An absolute difference of the FWHM of the characteristic peaks of (111) planes of the first surface and the second surface analyzed by GIXRD is less than 0.14, the first and the second surfaces each have a nanoindentation hardness of 0.3 GPa to 3.0 GPa, and the yield strength of the electrolytic copper foil is more than 230 MPa. By controlling the absolute difference of the FWHM of the characteristic peaks of (111) plane of these two surfaces, the nanoindentation hardness of these two surfaces and the yield strength, the electrolytic copper foil can have improved tolerance to the repeated charging and discharging and reduced warpage, thereby improving the yield rate and value of the lithium-ion cell.

Abstract: A display system suitable for a vehicle is provided. The display system suitable for the vehicle includes a center console, a processing device, and a display device. The center console is configured to generate a power sequence according to a customization setting, and the power sequence corresponds to content of a data table. The processing device is configured to receive the power sequence and decodes the power sequence through a lookup table to generate a decoding result. The lookup table includes the content of the data table. The display device is coupled to the processing device and is configured to display a display image according to the decoding result.

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

Abstract: Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a high-k dielectric layer, a p-type work function layer, an n-type work function layer, a dielectric anti-reaction layer, and a glue layer; and a continuous metal cap over the gate structure formed by metal material being deposited over the gate structure, a portion of the anti-reaction layer being selectively removed, and additional metal material being deposited over the gate structure. A semiconductor fabrication method includes: receiving a gate structure; flattening the top layer of the gate structure; precleaning and pretreating the surface of the gate structure; depositing metal material over the gate structure to form a discontinuous metal cap; selectively removing a portion of the anti-reaction layer; depositing additional metal material over the gate structure to create a continuous metal cap; and containing growth of the metal cap.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.