Abstract: A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first IC chip bonded to a second IC chip. The first IC chip includes a plurality of photodetectors disposed in a first substrate and a first bond structure. The first bond structure includes a first plurality of bond contacts disposed on a first plurality of conductive bond pads. The second IC chip includes a second bond structure and a second substrate. A first bond interface is disposed between the first bond structure and the second bond structure. The second bond structure comprises a second plurality of bond contacts. The first bond structure further includes a first plurality of shield structures disposed between adjacent conductive bond pads in the first plurality of conductive bond pads.

Abstract: Various embodiments of the present disclosure relate to an interstitial stacked-integrated-circuit interface shielding structure. A first integrated circuit (IC) chip includes a first dielectric layer. A second IC chip is bonded to the first IC chip at a bond interface and includes a second dielectric layer directly contacting the first dielectric layer at the bond interface. A first pair of conductive pads are respectively in the first and second dielectric layers and directly contacting at the bond interface. A second pair of conductive pads are respectively in the first and second dielectric layers and directly contacting at the bond interface. A pair of shield structures are respectively in the first and second dielectric layers and directly contact at the bond interface. Further, the pair of shield structures separate the first pair of conductive pads from the second pair of conductive pads.

Abstract: Some embodiments relate to an IC device, including a first chip comprising a plurality of pixel blocks respectively including one of a first plurality of conductive pads, the plurality of pixel blocks arranged in rows extending in a first direction and columns extending in a second direction perpendicular to the first direction; a second chip bonded to the first chip at a bonding interface, where the second chip comprises a second plurality of conductive pad recessed and contacting the first plurality of conductive pads along the bonding interface; and a first corrugated shield line having outermost edges set-back along the second direction from outermost edges of a first row of the plurality of pixel blocks, the first corrugated shield line being arranged within a first dielectric layer and laterally separating neighboring ones of the first plurality of conductive pads within the first row of the plurality of pixel blocks.

Abstract: Some embodiments relate to an IC device, including a first chip; and a second chip bonded to the first chip at a bonding interface; where the first and second chips respectively comprise a first dielectric layer and a second dielectric layer directly contacting; the first chip further comprises a plurality of conductive pads recessed into the first dielectric layer and in a plurality of rows and columns; where the plurality of conductive pads are arranged with a zig-zag layout along the plurality of columns and along the plurality of rows and comprise a first conductive pad and a second conductive pad; the first chip further comprises a first shield line in the first dielectric layer and laterally between the first and second conductive pads, and the second chip further comprises a contact recessed into the second dielectric layer and directly contacting the first conductive pad at the bonding interface.

Abstract: An assembling method of an anti-rotation structure is introduced, the anti-rotation structure includes at least one anti-rotation portion, a material entering portion and a pressure applying portion, pressure is applied to the pressure applying portion by an external force, so that material of an object enters or flows into the material entering portion, and the anti-rotation portion is used to anti-rotate with the object. Accordingly, the anti-rotation structure and the required object can achieve the effect of a stable combination.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first IC chip bonded to a second IC chip. The first chip IC includes a first bond structure. The first bond structure includes a first plurality of conductive bond pads and a first plurality of shield structures disposed between adjacent conductive bond pads among the first plurality of conductive bond pads. The second IC chip includes a second bond structure. A bonding interface is disposed between the first bond structure and the second bond structure. The second bond structure includes a second plurality of conductive bond pads and a second plurality of shield structures. The first plurality of conductive bond pads contacts the second plurality of conductive bond pads and the first plurality of shield structures contacts the second plurality of shield structures at the bonding interface.

Abstract: An engagement structure and an engagement method for the same are introduced. The engagement structure includes a body portion and a connecting portion. The connecting portion is disposed at the body portion, provided with a limiting portion, and adapted to engage with an engaged object, allowing the engaged object to be confined to a confinement range of the limiting portion. Thus, the body portion can be disposed at an object, and the connecting portion can engage with or disengage from the engaged object, allowing at least two objects to be coupled together and separated repeatedly and quickly.

Abstract: A fluid communicating structure includes at least one body and at least one block unit, and a communicating method thereof. The body includes a flow channel. The block unit is movably combined with the body, and is configured to open or close the flow channel. Thus, a required fluid is enabled to flow stably with flow guidance of the body.

Abstract: An optical photographing system includes seven lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the sixth lens element is convex in a paraxial region thereof. At least one of the object-side surface and the image-side surface of at least one lens element of the optical photographing system has at least one inflection point.

Abstract: A joint structure, a joint module and a method of assembling a joint structure on an object. The joint structure includes a body part and an actuating piece. The actuating piece combines movably with the body part, the actuating piece has a first joint part, the first joint part is located outside of the body part, the first joint part can carry out a vertical movement, lateral movement or rotational movement. Accordingly, the body part of the disclosure can go with the actuating piece or the first joint part, and combine to the first object and the second object, or disengage from the first object and the second object for achieving the effect of combining or separating at least two objects.

Abstract: An engaging connection structure and an engaging connection method thereof are introduced. The engaging connection structure includes a base and a fit engaging mechanism. The base is disposed at an object, and the fit engaging mechanism is movably disposed at the base. The base limits the fit engaging mechanism to engaging connect an engaged object disposed at an object or the base releases the fit engaging mechanism to disengage the engaged object disposed at the object. Thus, the base can be disposed at the object, and the fit engaging mechanism can engage connect or disengage the engaged object, thereby completing quick coupling and separation of at least two objects and hence achieving the effect of repeated quick coupling and separation.

Abstract: A fixing structure applied to arrange a heat dissipating device to a heat generating body on an object includes an entrance portion provided on the heat dissipating device and an elastic fastener provided on the object. The elastic fastener is arranged on the object, and includes a coupling head, a rod connected to the coupling head, and an elastic element sleeved on the rod. The entrance portion is in communication with a slide portion, and the elastic fastener is adapted to enter the slide portion by the rod via the entrance portion and have the coupling head contact the heat dissipating device. The elastic element is for providing an elastic force for tightly securing the coupling head on the heat dissipating device, so as to press the heat dissipating device against the heat generating body in order to dissipate heat.

Abstract: A fastener structure includes a head portion, rod member and fitting member. The head portion has a lateral holding portion and vertical receiving portion. The rod member has a lateral attaching portion and engaging member. The rod member is penetratingly disposed at the receiving portion to allow the attaching portion to correspond in position to the holding portion. The fitting member is penetratingly disposed at the attaching portion and the holding portion to fit the head portion and the rod member together. To couple two objects together, the head portion drives an engaging portion of the rod member, such that the engaging portion penetrates one object before being fastened to the other object. To unfasten the objects, the head portion is moved reversely to remove the engaging portion from the other object, effecting separation of the objects, so as to achieve quick coupling and easy unfastening.

Abstract: The present disclosure relates to an image sensor integrated chip structure. The image sensor integrated chip structure includes one or more logic devices disposed within a first substrate and coupled to a first interconnect structure on the first substrate. A plurality of pixel support devices are disposed along a first-side of a second substrate and coupled to a second interconnect structure on the second substrate. The first substrate is bonded to the second substrate. A plurality of image sensing elements are disposed within a third substrate in pixel regions respectively including two or more of the plurality of image sensing elements. A plurality of transfer gates and a third interconnect structure are disposed on a first-side of the third substrate. The third interconnect structure includes interconnect wires and vias confined between the first-side of second substrate and the first-side of the third substrate.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor comprising a pixel with a dual-PD layout for enhanced scaling down. The pixel spans a first integrated circuit (IC) die and a second IC die stacked with the first IC die. The pixel comprises a plurality of photodetectors in the first IC die, and further comprises a plurality of pixel transistors split amongst the first IC die and the second IC die. The plurality of photodetectors are grouped into one or more pairs, each having the dual-PD layout. A DTI structure completely and individually surrounds the plurality of photodetectors, and further extends completely through a substrate within which the plurality of photodetectors are arranged. As such, the DTI structure completely separates the plurality of photodetectors from each other.

Abstract: The present disclosure relates to an image sensor including a pixel along a substrate. The pixel includes a first semiconductor region having a first doping type. A second semiconductor region is directly over the first semiconductor region. The second semiconductor region has a second doping type opposite the first doping type and meets the first semiconductor region at a p-n junction. A ring-shaped third semiconductor region laterally surrounds the first and second semiconductor regions. The ring-shaped third semiconductor region has the first doping type. A ring-shaped fourth semiconductor region laterally surrounds the ring-shaped third semiconductor region. The ring-shaped fourth semiconductor region has the second doping type. A ring-shaped fifth semiconductor region is directly over the ring-shaped third semiconductor region and has the second doping type.

Abstract: A fastener structure includes a head portion, rod member and fitting member. The head portion has a lateral holding portion and vertical receiving portion. The rod member has a lateral attaching portion and engaging member. The rod member is penetratingly disposed at the receiving portion to allow the attaching portion to correspond in position to the holding portion. The fitting member is penetratingly disposed at the attaching portion and the holding portion to fit the head portion and the rod member together. To couple two objects together, the head portion drives an engaging portion of the rod member, such that the engaging portion penetrates one object before being fastened to the other object. To unfasten the objects, the head portion is moved reversely to remove the engaging portion from the other object, effecting separation of the objects, so as to achieve quick coupling and easy unfastening.

Abstract: A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.

Abstract: The present disclosure provides a communicating structure applied to a first communicating body and including a door assembly. The door assembly is assembled in the first communicating body, and includes a door movably connected to the first communicating body, and a connecting structure allowing movement of the door. The connecting structure includes an actuating portion, and the door is provided with a connecting portion. The actuating portion is for acting on the connecting portion or performing a lever operation on the connecting portion so as to move the door.