Abstract: An imaging optical lens assembly includes four lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element and a fourth lens element. Each of the four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one of all lens surfaces of the four lens elements is aspheric and has at least one inflection point.

Abstract: A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.

Abstract: A soldering component and a method of fitting it to boards are introduced. The soldering component includes a body and a fitting portion. The fitting portion is fitted to an object. The body has an engaging portion with an elastic retraction space conducive to elastic retraction of two or more engagement portions, allowing the engagement portions to engage with another object. The soldering component has a weldable surface to be soldered to a weldable surface of the object. The weldable surface of the object has a built-in solder layer adapted to be heated for soldering the soldering component and the weldable surface of the object together. The soldering component is disposed in a carrier, taken out with a tool, compared with the object by a comparison device to determine a fitting position on the object, positioned at the fitting position with the tool, thereby being fitted to the object.

Abstract: A soldering component and a method of fitting it to boards are introduced. The soldering component includes a body and a fitting portion. The fitting portion is fitted to an object. The body has an engaging portion with an elastic retraction space conducive to elastic retraction of two or more engagement portions, allowing the engagement portions to engage with another object. The soldering component has a weldable surface to be soldered to a weldable surface of the object. The weldable surface of the object has a built-in solder layer adapted to be heated for soldering the soldering component and the weldable surface of the object together. The soldering component is disposed in a carrier, taken out with a tool, compared with the object by a comparison device to determine a fitting position on the object, positioned at the fitting position with the tool, thereby being fitted to the object.

Abstract: An assembling die block includes a first main die having at least one first mounting section; a second main die having at least one second mounting section; at least one first matching die respectively having a first mating section to be correspondingly associated with the at least one first mounting section; and at least one second matching die respectively having a second mating section to be correspondingly associated with the at least one second mounting section. Wherein, there is a plurality of first mounting sections arrayed in a matrix; or there is a plurality of second mounting sections arrayed in a matrix; or there is a plurality of first mounting sections arrayed in a matrix and a plurality of second mounting sections arrayed in a matrix. An assembling apparatus using the above assembling die block is also disclosed.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varyies at different heights along the side of the photodiode.

Abstract: A method for manufacturing a food shaping mold includes following steps. A calculation module is provided. The calculation module calculates a shape or form of a corresponding food shaping mold according to a target shape of a target food, or calculates the shape or form of a corresponding food shaping mold according to a target density, thickness, hardness, elasticity, tasting texture, glutenness, taste, color, temperature, structure, shape or flavor of the target food so as to produce a food shaping mold. The present disclosure further provides a food shaping mold, which is manufactured by the above method. The present disclosure further provides a method for manufacturing a food, wherein the shape, form or structure of the target food is calculated by the above method for manufacturing a food shaping mold.

Abstract: A fastener structure includes a body and a fastening portion. The fastening portion is provided on one end of the body, and includes a neck configured to be receivingly fastened into, assembled into or fitted with a coupling counterpart. Thus, the handle and the coupling counterpart may be assembled during use, and the handle may be removed from the coupling counterpart when not in use, achieving effects of easy operation and collision prevention. Further, the fastener structure may be assembled to a first object, and be fastening connected to a second object or removed from the second object so as to complete coupling or separation of at least two objects, achieving the effect of repeated quick coupling and separation.

Abstract: An image sensor structure that further includes a first substrate having a front side and a back side; a photodetector disposed on the front side of the first substrate and spanning a dimension Dp along a first direction; a gate electrode formed on the front side of the first substrate and partially overlapping the photodetector; a doped region as a floating diffusion region formed on the front side of the first substrate and disposed next to the photodetector; and an interconnect structure disposed on the front surface of the first substrate and overlying the gate electrode. The interconnect structure includes a second metal layer over a first metal layer, the second metal layer further includes a first and second metal features distanced a distance Ds along the first direction, the first metal feature is electrically connected to the doped feature, and a first ratio Ds/Dp is greater than 0.3.

Abstract: Provided a filter and a redistribution layer structure including the same. The capacitor includes a first electrode, a second electrode, a third electrode, a dielectric layer, and a conductive through via. The second electrode is disposed above the first electrode. The third electrode is disposed between the first electrode and the second electrode. The dielectric layer is disposed between the first electrode and the third electrode and between the second electrode and the third electrode. The conductive through via penetrates the dielectric layer and the third electrode to be connected to the first electrode and the second electrode, and is electrically separated from the third electrode. The first electrode and the second electrode are signal electrodes, and the third electrode is a ground electrode.

Abstract: A semiconductor device includes a first chip comprising a plurality of photo-sensitive devices, wherein the plurality of photo-sensitive devices are formed as a first array. The semiconductor device includes a second chip bonded to the first chip and comprising: a plurality of groups of pixel transistors, wherein the plurality of groups of pixel transistors are formed as a second array; and a plurality of input/output transistors, wherein the plurality of input/output transistors are disposed outside the second array. The semiconductor device includes a third chip bonded to the second chip and comprising a plurality of logic transistors.

Abstract: Provided is a semiconductor package structure including a redistribution layer (RDL) structure, a chip, an electronic device and a stress compensation layer. The RDL structure has a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the RDL structure. The electronic device is disposed in the RDL structure, electrically connected to the chip, and includes a dielectric layer disposed therein. The stress compensation layer is disposed in or outside the RDL structure. The dielectric layer provides a first stress between 50 Mpa and 200 Mpa in a first direction perpendicular to the second surface, the stress compensation layer provides a second stress between 50 Mpa and 200 Mpa in a second direction opposite to the first direction, and the difference between the first stress and the second stress does not exceed 60 Mpa.

Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

Abstract: The present disclosure provides a fluid joint structure including a first body and a second body. The first body includes a first cavity, a first joint element and a first elastic element. The second body includes a second cavity, a second joint element and a second elastic element. The first body is joined with the second body such that the first joint element and the second joint element push against each other to generate a flow path of a fluid for the fluid to flow in the first cavity and the second cavity. Thus, a required fluid is enabled to flow stably in the first body and the second body.

Abstract: A welding connection element includes a body and an assembly portion. The body includes a fitting fastening portion having an elastic withdrawal space. The elastic withdrawal space is capable of elastically withdrawing two or more fastening portions, so as to enable the fastening portions to be receivingly fastened in another object. The welding connection element has a welding surface configured to be welding connected to a welding surface of the object. The welding surface of the object is provided in advance with a solder layer configured to be heated and to welding connect the welding connection element and the welding surface of the object. The welding connection element is provided at a carrier in advance, taken out by a tool, compared with an assembly position of the object by a comparison device, and placed at the assembly position by the tool so as to be assembled with the object.

Abstract: A handle with a fastening portion includes a body and a second fastening portion. The second fastening portion is provided on one end of the body, and includes a neck configured to be receivingly fastened into, assembled into or fitted with a coupling counterpart. Thus, the handle may be assembled with a coupling counterpart when in use, and the handle may be removed from the coupling counterpart when not in use.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.

Abstract: A robot system is provided that includes movable parts, one or more object detecting sensors, and one or more processors, wherein the one or more object detecting sensors is dispose at or near the elbow, the wrist, or the position between the elbow and the wrist of the robot. Multiple embodiments are introduced for the implementation of the object detection of the robot system.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensor disposed within a substrate. The substrate has sidewalls and a horizontally extending surface defining one or more trenches extending from a first surface of the substrate to within the substrate. One or more isolation structures are arranged within the one or more trenches. A doped region is arranged within the substrate laterally between sidewalls of the one or more isolation structures and the image sensor and vertically between the image sensor and the first surface of the substrate. The doped region has a higher concentration of a first dopant type than an abutting part of the substrate that extends along opposing sides of the image sensor.