Abstract: The present invention provides a method capable of stably producing a zinc oxide single crystal in which a large amount of dopant forms a solid solution at a high level of productivity and reproducibility without using a harmful substance. The method of the present invention comprises providing a raw material powder that is mainly composed of zinc oxide, comprises at least one dopant element selected from B, Al, Ga, In, C, F, Cl, Br, I, H, Li, Na, K, N, P, As, Cu, and Ag in a total amount of 0.01 to 1 at %, and is substantially free of a crystal phase other than zinc oxide, and injecting the raw material powder to form a film mainly composed of zinc oxide on a seed substrate comprising a zinc oxide single crystal and also to crystallize the formed film in a solid phase state.

Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

Abstract: Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract: Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region.

Abstract: Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.

Abstract: The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.

Abstract: The method for producing a cathode active material for a lithium secondary battery is characterized by including (1) a forming step of forming a sheet-form compact containing, as raw substances, a lithium compound serving as a first ingredient, a compound of a transition metal other than lithium serving as a second ingredient, and at least one of boron oxide and vanadium oxide serving as a third ingredient; and (2) a firing step of firing the compact at 700 to 1,300° C.

Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Abstract: Provided is a method for determining activity of arylsulfatase in an aqueous system, which comprises a step in which arylsulfatase is subjected to reaction with a substrate, from which fluorophore or chromophore is liberated by suffering an action of the arylsulfatase, in an aqueous reaction system having high ionic strength. Also, provided are a lactase preparation having a lactase activity of 4,000 NLU/g or more according to the FCC IV method and having an arylsulfatase activity of 0.1% or less of the lactase activity as the basis, in which the arylsulfatase activity has been determined by the method for determining activity of arylsulfatase in an aqueous system according to the fluorescence method of the present invention; a method for producing this preparation; and a dairy product which comprises using this preparation.

Abstract: A plasma processing method includes holding a target substrate on a holding table installed in a processing chamber; generating a microwave for plasma excitation; supplying a reactant gas having dissociation property; generating an electric field by introducing the microwave via a dielectric plate disposed to face the holding table; setting a distance between the holding table and the dielectric plate is set to a first distance based on periodicity of a standing wave formed in the dielectric plate by the introduction of the microwave, and generating plasma in the processing chamber in a state where the electric field is generated in the processing chamber; and after the generating of the plasma, setting the distance to a second distance shorter than the first distance by moving the holding table up and down, and performing the plasma process on the target substrate.

Abstract: An object of the present invention is to provide a lithium secondary battery cathode which can more improve characteristics of the battery. The cathode of the present invention includes a first layer composed of a plate-like cathode active material and a second layer containing particles of the cathode active material and a binder, the second layer being joined to the first layer in a stacked state.

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract: A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.

Abstract: According to one embodiment, there is provided a graphite nano-carbon fiber provided by using an apparatus having a reactor capable of keeping a reducing atmosphere inside thereof, a metal substrate arranged as a catalyst in the reactor, a heater heating the metal substrate, a pyrolysis gas source supplying pyrolysis gas obtained by thermally decomposing a wood material in a reducing atmosphere to the reactor, a scraper scraping carbon fibers produced on the metal substrate, a recovery container recovering the scraped carbon fibers, and an exhaust pump discharging exhaust gas from the reactor. The carbon fibers are linear carbon fibers with a diameter of 25 to 250 nm formed with layers of graphenes stacked in a longitudinal direction.

Abstract: A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.