Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: Methods, systems, and devices for wireless communication are described. In some systems, a user equipment (UE) may transmit, to a network entity, a first signal including a request to update a resolution of a phase shifting operation associated with beam-based communications. The UE may receive, from the network entity, a second signal approving the request. The UE may communicate using a beam according to an updated resolution of the phase shifting operation based on the second signal approving the request. Additionally, or alternatively, the UE may transmit a first signal including a request to suspend a beam refinement process based on the resolution of the phase shifting operation. The UE may receive a second signal approving the request to suspend the beam refinement process. The UE may communicate with the network entity using a beam based on suspending further beam refinement in response to the second signal.

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: It is introduced that a device of manufacturing lithium sulfate comprising: a reaction body in which a reaction of lithium phosphate and sulfuric acid is performed, the reaction body being divided into an upper space and a lower space; a pressurizer for applying pressure to the inside of the reaction body; a stirrer disposed in the upper space for stirring the lithium phosphate and sulfuric acid to produce a mixture containing lithium sulfate and phosphoric acid; and a filter disposed inside the reaction body and separating the filtrate containing the phosphoric acid into the lower space by filtering the mixture.

Abstract: A battery module includes a battery cell stack including a plurality of battery cells stacked and arranged in a first direction; a module housing in which the battery cell stack is housed; and a deformation preventing structure disposed between the outermost battery cell of a plurality of battery cells and the module housing, wherein the module housing includes a housing plate including a space part and disposed adjacent to the outermost battery cell, the deformation preventing structure includes: a pressure plate fixed to the housing plate and supported on the battery cell stack; and a spring structure accommodated in the space part of the housing plate and disposed between the pressure plate and the housing plate. The space part is constituted by a recess portion provided on one side of the housing plate facing the battery cell stack.

Abstract: An electronic component includes a board, an electronic device, and a stiffening structure is provided. The electronic device is disposed on the board. The stiffening structure is disposed on the board. The stiffening structure includes a ring portion corresponding the edge of the board. The stiffening structure includes a core base and a cladding layer. The cladding layer covers the core base.

Abstract: Disclosed herein is a semiconductor device including a processor that processes input data received via a bus and transmits the process input data as output data via the bus; an input/output data converter that receives the output data via the bus, converts the output data into transmit preGPIO data, and transmits the transmit preGPIO data to the bus; and a GPIO input/output unit that receives the transmit preGPIO data via the bus, converts the transmit preGPIO data into transmit GPIO data, and outputs the transmit GPIO data to at least one GPIO pad.

Abstract: The present disclosure relates to a light-emitting device, display device including the same, and method for manufacturing the same. A light-emitting device includes a nitride semiconductor structure including a first semiconductor layer, an active layer and a second semiconductor layer; and a passivation pattern at least partially surrounding an outer side surface of the nitride semiconductor structure, wherein the nitride semiconductor comprises a convex hemispherical shape.

Abstract: A light-emitting device and a method for manufacturing the light-emitting device are discussed. The light-emitting device can include a nitride semiconductor structure including a first semiconductor layer, an active layer and a second semiconductor layer; a passivation pattern disposed on opposing side surfaces of the nitride semiconductor structure; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer. An upper surface of the passivation pattern can be disposed to be substantially coplanar with an upper surface of the second semiconductor layer.

Abstract: A separator for a rechargeable lithium battery and a rechargeable lithium battery, the separator including a porous substrate; and a coating layer on at least one surface of the porous substrate, wherein the coating layer includes a binder and inorganic particles, the binder including a polyurethane and a polyvinyl alcohol, and the polyurethane and the polyvinyl alcohol are included in a weight ratio of about 5:5 to about 9:1.

Abstract: Memory array structures, and methods of their formation, might include a first memory cell having a first control gate and an adjacent first portion of a charge-blocking structure, a second memory cell having a second control gate and an adjacent second portion of the charge-blocking structure, and a first dielectric material between the first control gate and the second control gate, and adjacent to a third portion of the charge-blocking structure that is between the first and second portions of the charge-blocking structure. The third portion of the charge-blocking structure might include a second dielectric material and a third dielectric material different than the second dielectric material, and the first portion of the charge-blocking structure and the second portion of the charge-blocking structure might each include the third dielectric material and a fourth dielectric material different than the second dielectric material. Apparatus might include such memory array structures.

Abstract: Provided is a method of forming a micro/nanowire having a nanometer- to micrometer-sized diameter at predetermined positions of an object. The method includes: preparing a micro/nanopipette having a tip with an inner diameter which is substantially the same as the diameter of the micro/nanowire to be formed; filling the micro/nanopipette with a solution containing a micro/nanowire-forming material; brining the solution into contact with the object through the tip of the micro/nanopipette; and pulling the micro/nanopipette from the object at a pulling speed lower than or equal to a predetermined critical speed (?c) to obtain a micro/nanowire having substantially the same diameter as the inner diameter of the micro/nanopipette tip.

Abstract: A flash memory storage management method includes: providing a flash memory module including single-level-cell (SLC) blocks and at least one multiple-level-cell block such as MLC block, TLC block, or QLC block; classifying data to be programmed into groups of data; respectively executing SLC programing and RAID-like error code encoding to generate corresponding parity check codes, to program the groups of data and corresponding parity check codes to the SLC blocks; when completing program of the SLC blocks, performing an internal copy to program the at least one multiple-level-cell block by sequentially reading and writing the groups of data and corresponding parity check codes from the SLC blocks to the multiple-level-cell block according to a storage order of the SLC blocks.

Abstract: The present disclosure provides a method of processing a semiconductor structure. The method includes: placing a first semiconductor structure inside a semiconductor processing apparatus; supplying a solution, wherein the solution is directed toward a surface of the first semiconductor structure, and the solution includes a solvent and a resist; rotating the first semiconductor structure to spread the solution over the surface of the first semiconductor structure; forming a resist layer on the surface of the first semiconductor structure using the resist in the solution; and removing a portion of the solvent from the solution by an exhaust fan disposed adjacent to a periphery of the first semiconductor structure.

Abstract: A display device comprises a display panel substrate and a glass substrate over said display panel substrate, wherein said display panel substrate comprises multiple contact pads, a display area, a first boundary, a second boundary, a third boundary and a fourth boundary, wherein said display area comprises a first edge, a second edge, a third edge and a fourth edge, wherein said first boundary is parallel to said third boundary and said first and third edges, wherein said second boundary is parallel to said fourth boundary and said second and fourth edges, wherein a first least distance between said first boundary and said first edge, wherein a second least distance between said second boundary and said second edge, a third least distance between said third boundary and said third edge, a fourth distance between said fourth boundary and said fourth edge, and wherein said first, second, third and fourth least distances are smaller than 100 micrometers, and wherein said glass substrate comprising multiple meta

Abstract: The present invention provides a hanging assembly for a cabinet. The cabinet includes a first lateral plate for defining an accommodation space, and the first lateral plate includes an opening. The hanging assembly includes a first connecting component fixed to the cabinet and a second connecting component. The first connecting component includes a first main body and a convex portion. The first main body includes a first surface. The convex portion is disposed on the first surface and passes through the opening along a first direction. The second connecting component includes a second main body and a hanging component. The second main body includes a second surface, and the second surface is detachably connected to the convex portion through the opening. The first lateral plate is disposed between the first connecting component and the second connecting component. The hanging component is disposed on the second main body.

Abstract: The present invention relates to a medicament delivery device comprising a housing, a compartment inside said housing for positioning a medicament container, an injection needle arranged to said housing, being connectable to said medicament container for delivering a dose of medicament, a manually operated activation mechanism for activating said device, an actuation mechanism operably connected to said activation mechanism and arranged to, upon activation of said activation mechanism, extend said injection needle from a first position inside said housing to a second position wherein a penetration of a patient is performed, a plunger rod arranged in said housing capable of acting on said medicament container for delivering a dose of medicament through said injection needle, a driver capable of acting on said plunger rod for delivering a dose of medicament.

Abstract: A semiconductor structure includes a first die and a plurality of first dummy pads. The first die includes a first interconnect structure and a first active pad electrically connected to the first interconnect structure. The first dummy pads laterally surround the first active pad and are electrically floating.

Abstract: Present disclosure provides a semiconductor structure and a method for fabricating a semiconductor structure. The semiconductor structure includes a substrate, a conductive layer in the substrate, a conductive bump over the substrate and electrically coupled to the conductive layer, and a dielectric stack, including a polymer layer laterally surrounding the conductive bump and including a portion spaced from a nearest outer edge of the conductive bump with a gap, wherein a first thickness of the polymer layer in a first region is greater than a second thickness of the polymer layer in a second region adjacent to the first region, a first bottom surface of the polymer layer in the first region is leveled with a second bottom surface of the polymer layer in the second region, and a dielectric layer underneath the polymer layer.

Abstract: A semiconductor structure includes: a first die, comprising a first interconnect structure and a first active pad electrically connected to the first interconnect structure; a first bonding dielectric layer over the first die; a first active bonding via in the first bonding dielectric layer, electrically connected to the first interconnect structure; and a plurality of first dummy bonding vias in the first bonding dielectric layer, wherein the first dummy bonding vias laterally surround the first active bonding via and are electrically floating.