Abstract: A semiconductor structure including a first semiconductor die, a second semiconductor die, a passivation layer, an anti-arcing pattern, and conductive terminals is provided. The second semiconductor die is stacked over the first semiconductor die. The passivation layer covers the second semiconductor die and includes first openings for revealing pads of the second semiconductor die. The anti-arcing pattern is disposed over the passivation layer. The conductive terminals are disposed over and electrically connected to the pads of the second semiconductor die.

Abstract: A semiconductor device includes a metallic pattern provided above a substrate and extending in a first direction with a first width, a first active metallic feature directly connected to the metallic pattern and extending in a second direction from the metallic pattern with a second width that is smaller than the first width, and a first dummy metallic feature arranged adjacently to the first active metallic feature. The first dummy metallic feature is directly connected to the metallic pattern and extends in the second direction from the metallic pattern while not electrically connected to lines other than the metallic pattern.

Abstract: Methods and apparatus are disclosed for manufacturing metal contacts under ground-up contact pads within a device. A device may comprise a bottom metal layer with a bottom metal contact, a top metal layer with a top metal contact, and a plurality of middle metal layers. Any given metal layer of the plurality of middle metal layers comprises a metal contact, the metal contact is substantially vertically below the top metal contact, substantially vertically above the bottom metal contact, and substantially vertically above a metal contact in any metal layer that is below the given metal layer. The metal contacts may be of various and different shapes. All the metal contacts in the plurality of middle metal layers and the bottom metal contact may be smaller than the top metal contact, therefore occupying less area and saving more area for other functions such as device routing.

Abstract: A semiconductor structure including a first semiconductor die, a second semiconductor die, a passivation layer, an anti-arcing pattern, and conductive terminals is provided. The second semiconductor die is stacked over the first semiconductor die. The passivation layer covers the second semiconductor die and includes first openings for revealing pads of the second semiconductor die. The anti-arcing pattern is disposed over the passivation layer. The conductive terminals are disposed over and electrically connected to the pads of the second semiconductor die.

Abstract: Some embodiments of the compositions and methods disclosed herein include gene-edited, artificial immunoregulatory T cells (airT cells) comprising a constitutively expressed FoxP3 gene product expressed at a level equal to or greater than the level of FoxP3 expression in natural T regulatory (Treg or suppressor T) cells, and a transduced (e.g., artificially engineered by gene editing, viral vector transduction, transfection or other genetic engineering methodologies) T cell receptor (TCR). In some embodiments, the TCR is preferably specific for an antigen associated with an autoimmune, allergic, or other inflammatory condition. Some embodiments include methods for the preparation and/or use of airT cells. Some such embodiments include use of airT cells for the treatment and/or amelioration of a disorder, in which antigen-specific immunosuppression may be beneficial, such as an autoimmune, allergic, or other inflammatory disorder.

Abstract: Provided is a semiconductor structure including an interconnect structure, disposed over a substrate; a pad structure, disposed over and electrically connected to the interconnect structure, wherein the pad structure comprises a metal pad and a dielectric cap on the metal pad, and the pad structure has a probe mark recessed from a top surface of the dielectric cap into a top surface of the metal pad; a protective layer, conformally covering the top surface of the dielectric cap and the probe mark; and a bonding structure, disposed over the protective layer, wherein the bonding structure comprises: a bonding dielectric layer at least comprising a first bonding dielectric material and a second bonding dielectric material on the first bonding dielectric material; and a first bonding metal layer disposed in the bonding dielectric layer and penetrating through the protective layer and the dielectric cap to contact the metal pad.

Abstract: A display apparatus comprising a driving circuit that includes a storage capacitor and at least one thin film transistor, and a light-emitting device that includes a region disposed outside the driving circuit and a region overlapping with the storage capacitor, each of capacitor electrodes of the storage capacitor being a transparent electrode having a relatively higher transmittance, so that the quality of the image realized on an outer surface of a device substrate which supports the driving circuit and the light-emitting device of each pixel area can be improved.

Abstract: Provided is a semiconductor structure including an interconnect structure, disposed over a substrate; a pad structure, disposed over and electrically connected to the interconnect structure, wherein the pad structure comprises a metal pad and a dielectric cap on the metal pad, and the pad structure has a probe mark recessed from a top surface of the dielectric cap into a top surface of the metal pad; a protective layer, conformally covering the top surface of the dielectric cap and the probe mark; and a bonding structure, disposed over the protective layer, wherein the bonding structure comprises: a bonding dielectric layer at least comprising a first bonding dielectric material and a second bonding dielectric material on the first bonding dielectric material; and a first bonding metal layer disposed in the bonding dielectric layer and penetrating through the protective layer and the dielectric cap to contact the metal pad.

Abstract: The present disclosure relates to a novel ruthenium oxide, a method of preparing the same, and a catalyst for selective hydrogenation of an aromatic compound or an unsaturated compound including the ruthenium oxide.

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.

Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.

Abstract: Additives for energy storage devices comprising cyclodextrin-based compounds and their derivatives are disclosed. The energy storage device comprises a first electrode and a second electrode, where at least one of the first electrode and the second electrode is a Si-based electrode, a separator between the first electrode and the second electrode, and an electrolyte composition. Cyclodextrin-based compounds may serve as additives to the first electrode, the second electrode, and/or the electrolyte.

Abstract: Disclosed herein is a preliminary guide including an impression resin and a guide tray. The guide tray includes an impression resin accommodation part, a jig fastening part, a protective cover part, and a grip part.

Abstract: Additives for energy storage devices comprising cyclodextrin-based compounds and their derivatives are disclosed. The energy storage device comprises a first electrode and a second electrode, where at least one of the first electrode and the second electrode is a Si-based electrode, a separator between the first electrode and the second electrode, and an electrolyte composition. Cyclodextrin-based compounds may serve as additives to the first electrode, the second electrode, and/or the electrolyte.

Abstract: An ear tag module includes a rod member, a spike, a circuit component, and a temperature sensor. The spike is disposed on one side of the rod member, and the circuit component is disposed on another side of the rod member. The temperature sensor is electrically connected to the circuit component. When the spike penetrates an ear, the ear is in contact with a sensing area of the rod member, and the temperature sensor is located in the rod member to detect a temperature of the ear and transmit at least one temperature sensing information to the circuit component.

Abstract: A display device comprises a display panel substrate and a glass substrate over said display panel substrate, wherein said display panel substrate comprises multiple contact pads, a display area, a first boundary, a second boundary, a third boundary and a fourth boundary, wherein said display area comprises a first edge, a second edge, a third edge and a fourth edge, wherein said first boundary is parallel to said third boundary and said first and third edges, wherein said second boundary is parallel to said fourth boundary and said second and fourth edges, wherein a first least distance between said first boundary and said first edge, wherein a second least distance between said second boundary and said second edge, a third least distance between said third boundary and said third edge, a fourth distance between said fourth boundary and said fourth edge, and wherein said first, second, third and fourth least distances are smaller than 100 micrometers, and wherein said glass substrate comprising multiple meta

Abstract: The present invention relates to: a labeling dye having excellent fluorescent intensity and photostability; and a kit.

Abstract: Deoxyhemoglobin in a subject may be modulated to act as a contrast agent for use in magnetic resonance imaging. Sequential gas delivery may be applied to adjust the level of deoxyhemoglobin in the subject. A suitable magnetic resonance imaging (MRI) pulse sequence that is sensitive to magnetic field inhomogeneities, such as a blood-oxygen-level dependent (BOLD) sequence, may be used to detect deoxyhemoglobin as a contrast agent.

Abstract: The present disclosure provides a semiconductor structure including a substrate, a first die vertically over the substrate, a second die vertically over the substrate and laterally separated from the first die with a gap, and an insulation material in the gap. The substrate is at least partially overlapped with the gap when viewed from a top view perspective, and a Young's modulus of the substrate is higher than that of the insulation material.

Abstract: A wheel bearing assembly includes a wheel hub, at least one inner ring, an outer ring, and one or more rolling elements. An accommodation space may be formed inward of a vehicle-body-side end portion of the wheel hub to accommodate a constant velocity joint, and a plurality of recesses for accommodating rotating elements of the constant velocity joint are formed on an inner peripheral surface of the accommodation space to be spaced apart from each other along a circumferential direction. A first heat-treated hardened portion may be formed on the inner peripheral surface of the accommodation space, and may be formed to have portions with which the rotating elements of the constant velocity joint is brought into contact. A second heat-treated hardened portion may formed on an outer peripheral surface of the wheel hub. The first and second heat-treated hardened portions may not overlap each other.