Abstract: Integrated circuit devices and method of manufacturing the same are disclosed. An integrated circuit device includes an interconnect structure on a substrate, a passivation layer on the interconnect structure, a plurality of conductive pads on the passivation layer and a through interconnect via (TIV). The interconnect structure includes a plurality of dielectric layers and an interconnect in the plurality of dielectric layers. The plurality of conductive pads includes a first conductive pad electrically connecting the interconnect. The through interconnect via extends through the plurality of dielectric layers and electrically connecting a first conductive layer of the interconnect.

Abstract: A display device comprises a display panel substrate and a glass substrate over said display panel substrate, wherein said display panel substrate comprises multiple contact pads, a display area, a first boundary, a second boundary, a third boundary and a fourth boundary, wherein said display area comprises a first edge, a second edge, a third edge and a fourth edge, wherein said first boundary is parallel to said third boundary and said first and third edges, wherein said second boundary is parallel to said fourth boundary and said second and fourth edges, wherein a first least distance between said first boundary and said first edge, wherein a second least distance between said second boundary and said second edge, a third least distance between said third boundary and said third edge, a fourth distance between said fourth boundary and said fourth edge, and wherein said first, second, third and fourth least distances are smaller than 100 micrometers, and wherein said glass substrate comprising multiple meta

Abstract: A semiconductor structure includes: a first die, comprising a first interconnect structure and a first active pad electrically connected to the first interconnect structure; a first bonding dielectric layer over the first die; a first active bonding via in the first bonding dielectric layer, electrically connected to the first interconnect structure; and a plurality of first dummy bonding vias in the first bonding dielectric layer, wherein the first dummy bonding vias laterally surround the first active bonding via and are electrically floating.

Abstract: A wheel bearing assembly according to one embodiment of the present disclosure may comprise a wheel hub, at least one inner ring, an outer ring, and one or more rolling elements. According to one embodiment of the present disclosure, an accommodation space may be formed inward of a vehicle-body-side end portion of the wheel hub to accommodate a constant velocity joint, and a plurality of recesses for accommodating rotating elements of the constant velocity joint are formed on an inner peripheral surface of the accommodation space to be spaced apart from each other along a circumferential direction. According to one embodiment of the present disclosure, a first heat-treated hardened portion may be formed on the inner peripheral surface of the accommodation space, wherein the first heat-treated hardened portion may be formed to have portions with which the rotating elements of the constant velocity joint is brought into contact.

Abstract: Present disclosure provides a semiconductor structure and a method for fabricating a semiconductor structure. The semiconductor structure includes a substrate, a conductive layer in the substrate, a conductive bump over the substrate and electrically coupled to the conductive layer, and a dielectric stack, including a polymer layer laterally surrounding the conductive bump and including a portion spaced from a nearest outer edge of the conductive bump with a gap, wherein a first thickness of the polymer layer in a first region is greater than a second thickness of the polymer layer in a second region adjacent to the first region, a first bottom surface of the polymer layer in the first region is leveled with a second bottom surface of the polymer layer in the second region, and a dielectric layer underneath the polymer layer.

Abstract: There is disclosed a jig device that can be used for processing a dental implant surgical guide. According to an aspect of the invention, there is provided a jig device for processing of a dental surgical guide, the jig device including: a base at which a surgical guide having an impression acquired in an oral cavity of a patient is disposed; a fixing unit which is provided at the base and at which one side of the surgical guide is seated; and a cover unit which allows the surgical guide to be disposed between the fixing unit and the cover unit and is formed to be openable and closeable so as to fix and/or unfix the surgical guide.

Abstract: Skin hydration is necessary to maintain the epidermal barrier, minimize adverse environmental influences, and reduce cell stress. Provided herein are compounds, such as compounds of Formula (I), and pharmaceutically and cosmetically acceptable salts thereof, and compositions, methods, and uses that may be used for skin hydration. Also reported herein is a scalable method for synthesizing compounds of Formula (I). The compounds provided herein are responsible for improved skin penetration and/or retention and are therefore useful for the treatment and/or prevention of various diseases, disorders, or conditions to protect human skin.

Abstract: Disclosed are an information processing method and information processing apparatus which execute an installed artificial intelligence (AI) algorithm and/or machine learning algorithm to process a spoken utterance of a user in a 5G communication environment. The information processing method according to an embodiment of the present disclosure may include receiving a spoken utterance of a user and extracting, from the spoken utterance, a demonstrative pronoun referring to a target indicated by the user, determining an image capture region to be scanned by a camera according to the type of the demonstrative pronoun, recognizing the target indicated by the user from a result of scanning the image capture region, and feeding back a result of processing the spoken utterance to the user on the basis of a result of recognizing the target indicated by the user.

Abstract: An apparatus for identifying a location of a terminal includes a communication unit comprising communication circuitry configured to receive, from the terminal, information corresponding to a signal transmitted from a signal generation module that is activated based on a door opening/closing of a vehicle; and a processor configured to identify the location of the terminal in the vehicle using the received information.

Abstract: Provided is a semiconductor structure including a pad disposed over and electrically connected to an interconnect structure, wherein the pad has a probe mark, and the probe mark has a concave surface; a protective layer conformally covering the pad and the probe mark; and a bonding structure disposed over the protective layer, wherein the bonding structure includes: a bonding dielectric layer includes a first bonding dielectric material and a second bonding dielectric material on the first bonding dielectric material; a first bonding metal layer including a via plug and a metal feature, wherein the via plug penetrates through the first bonding dielectric material and the protective layer to electrically connect to the pad having the probe mark, the metal feature is located on the via plug and the first bonding dielectric material, and the metal feature is laterally surrounded by the second bonding dielectric material.

Abstract: Semiconductor packages and methods of forming the same are disclosed. One of the methods includes the following steps. A first die is provided, wherein the first die comprises a first substrate, a first interconnect structure over the first substrate, and a first pad disposed over and electrically connected to the first interconnect structure. A first bonding dielectric layer is formed over the first die to cover the first die. By using a single damascene process, a first bonding via penetrating the first bonding dielectric layer is formed, to electrically connect the first interconnect structure.

Abstract: An optoelectronic package includes a substrate having a first surface and a second surface opposite to the first surface, an optoelectronic device on the first surface of the substrate, and a first conductive through via connecting the first surface and the second surface of the substrate. The optoelectronic device is electrically connected to the first conductive through via. A method for manufacturing the optoelectronic package is also provided.

Abstract: A semiconductor module includes a photonic integrated circuit and a receptacle. The photonic integrated circuit includes a substrate, a waveguide disposed on the substrate, and a recess in the substrate and having a first width. The receptacle is bonded to a top surface of the substrate and aligning with the recess. The receptacle and the recess jointly form a cavity, and the receptacle has a second width greater than the first width. A method for manufacturing the semiconductor module is also disclosed.

Abstract: Present disclosure provides a semiconductor structure, including a substrate, a pad on the substrate, a conductive layer electrically coupled to the pad at one end, a metal bump including a top surface and a sidewall, a solder bump on the top surface of the metal bump, a dielectric layer surrounding the sidewall of the metal bump and having a top surface, and the top surface of the metal bump entirely protruding the top surface of the dielectric layer, and a polymer layer on the top surface of the dielectric layer, the polymer layer being spaced from both the sidewall of the metal bump and a nearest outer edge of the solder bump with a gap. A method for fabricating a semiconductor device is also provided.

Abstract: A package structure includes a first die, a second die, an insulation structure, a through via, a dielectric layer and a redistribution layer. The second die is electrically bonded to the first die. The insulation structure is disposed on the first die and laterally surrounds the second die. The through via penetrates through the insulation structure to electrically connect to the first die. The through via includes a first barrier layer and a conductive post on the first barrier layer. The dielectric layer is on the second die and the insulation structure. The redistribution layer is embedded in the dielectric layer and electrically connected to the through via. The redistribution layer includes a second barrier layer and a conductive layer on the second barrier layer. The conductive layer of the redistribution layer is in contact with the conductive post of the through via.

Abstract: There is disclosed a jig device that can be used for processing a dental implant surgical guide. According to an aspect of the invention, there is provided a jig device for processing of a dental surgical guide, the jig device including: a base at which a surgical guide having an impression acquired in an oral cavity of a patient is disposed; a fixing unit which is provided at the base and at which one side of the surgical guide is seated; and a cover unit which allows the surgical guide to be disposed between the fixing unit and the cover unit and is formed to be openable and closeable so as to fix and/or unfix the surgical guide.

Abstract: A semiconductor structure including a first semiconductor die, a second semiconductor die, a passivation layer, an anti-arcing pattern, and conductive terminals is provided. The second semiconductor die is stacked over the first semiconductor die. The passivation layer covers the second semiconductor die and includes first openings for revealing pads of the second semiconductor die. The anti-arcing pattern is disposed over the passivation layer. The conductive terminals are disposed over and electrically connected to the pads of the second semiconductor die.

Abstract: A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

Abstract: Provided is a semiconductor package structure including a first die having a first bonding structure thereon, a second die having a second bonding structure thereon, a metal circuit structure, and a first protective structure. The second die is bonded to the first die such that a first bonding dielectric layer of the first bonding structure contacts a second bonding dielectric layer of the second bonding structure. The metal circuit structure is disposed over a top surface of the second die. The first protective structure is disposed within the top surface of the second die, and sandwiched between the metal circuit structure and the second die.

Abstract: The present invention relates to a medicament delivery device comprising a housing, a compartment inside said housing for positioning a medicament container, an injection needle arranged to said housing, being connectable to said medicament container for delivering a dose of medicament, a manually operated activation mechanism for activating said device, an actuation mechanism operably connected to said activation mechanism and arranged to, upon activation of said activation mechanism, extend said injection needle from a first position inside said housing to a second position wherein a penetration of a patient is performed, a plunger rod arranged in said housing capable of acting on said medicament container for delivering a dose of medicament through said injection needle, a driver capable of acting on said plunger rod for delivering a dose of medicament.