Abstract: A circuit for receiving data to be written in a synchronous semiconductor memory device, comprising: a first set of latches for receiving an n-bit data upon transition of an internal strobe signal; a counter for counting the number of transitions of the internal strobe signal and for outputting an indicating signal upon counting the end of a string of internal strobe signals; a second set of latches for receiving the outputs of the first set of latches, the second set of latches being clocked by the indicating signal; and a third set of latches for receiving the outputs of the second set of latches, the third set of latches being clocked by a clock signal derived from a system clock.

Abstract: A memory system includes at least one memory module, each of which has a pattern data generating circuit for generating a pattern data, which has a plurality of memories to which a command signal is commonly applied and corresponding data is applied respectively; and a memory controller for respectively applying the command signal and the corresponding data to the plurality of memories, applying a pattern data generating command to the memory module during a timing control operation, calculating time differences among data of reaching each of the plurality of memories using the pattern data outputted from each of the memories and receiving and outputting data using the calculated data reaching time difference. Therefore, a stable data transmission is achieved between the memory controller and the memories.

Abstract: The present invention provides a memory module, comprising: a plurality of semiconductor memory devices for writing and reading m-bit parallel data; and a buffer for converting n-bit serial data into the m-bit parallel data to output to the plurality of semiconductor memory devices, converting the m-bit parallel data into the n-bit serial data to output to a first external portion during a normal operation, buffering 2n-bit parallel data to output to the plurality of semiconductor memory devices, and buffering the m-bit parallel data to output to a second external portion during a test operation.

Abstract: A semiconductor memory device comprising control pads and input/output I/O pads capable of reducing the data path for reading and writing data in a cell array, and a method for driving the semiconductor memory device are included. The semiconductor memory device comprises a plurality of memory banks arranged at a cell region of a memory chip, and a plurality of control pads and a plurality of I/O pads, separately arranged from each other at the memory chip, for reading/writing data from/in the memory banks, wherein the plurality of control pads and I/O pads are dispersed at the peripheral region between adjacent memory banks and at the outer portions of the memory banks.

Abstract: Integrated circuit memory devices include a memory cell array that is configured to write N data bits in parallel and a write data path that is configured to serially receive 2N data bits from an external terminal. The write data path includes 2N write data buffers that are configured to store the 2N data bits, 2N switches, and N data lines that are configured to connect at least N of the 2N switches to the memory cell array to write therein N data bits in parallel. A reduced number of local data lines and/or global data lines may be provided.

Abstract: Provided are a reset circuit of a data path using a clock enable signal, a reset method and a semiconductor memory device having the reset circuit. The reset circuit includes an external voltage detector and a second reset signal generator, in which the second reset signal is used to reset a block related to a data path of the semiconductor memory device. The external voltage detector detects the level of an external voltage and generates a first reset signal. The second reset signal generator performs a logical sum of an external signal, which is externally input, and the first reset signal, and generates a second reset signal. The first reset signal is used to reset blocks other than the blocks related to the data path. The external signal is a clock enable signal. In the soft reset, the blocks related to the data path are reset using the external signal which is applied at a certain level.

Abstract: A semiconductor memory device having a partial activation framework, which provides an efficient page mode operation while operating in a partial activation mode. Control circuits and methods are provided to enable a page mode operation (for read and write data accesses) in a semiconductor memory device (such as a DRAM, FCRAM) having a partial activation framework, resulting in an improved data access speed when data is written/read from memory locations having the same wordline address.

Abstract: Disclosed is a semiconductor memory device and a method for writing and reading data to and from the same. The semiconductor memory device comprises a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit line pairs; a predetermined number of write line pairs; a predetermined number of read line paris; a plurality of write column selection gates for transmitting data between the plurality of bit line pairs and the predetermined number of write line pair during a write operation; and a plurality of read column selection gates for transmitting data between the plurality of bit line pairs and the predetermined number of read line pairs during a read operation. Accordingly, it is possible to input and output data simultaneously through data input pads and data output pads.

Abstract: A data buffer, such as a data strobe input buffer or a data input buffer, which may operate in multiple modes, such as a single mode (SM) and a dual mode (DM) and where the mode is selected by providing a signal, such as an external signal such as an address signal or an external command signal. A data buffer which can be used for a SM/DM dual-use and can improve a data setup/hold margin. A semiconductor memory device including one or more of the data buffers described above. A method for controlling propagation delay times which can improve a data setup/hold margin in a SM/DM dual-use data buffer.

Abstract: The invention provides an improved memory system that addresses signal degradation due to transmission line effects. The improved memory system includes a first buffer, at least one first memory device coupled to the first buffer, and a plurality of signal traces. The first buffer and memory device are mounted on a motherboard. Likewise, the plurality of signal traces is routed on the motherboard. Doing so eliminates stub loads that cause signal reflection that, in turn, result in signal degradation.

Abstract: An internal voltage generating circuit is provided. The internal voltage generating circuit of a semiconductor device includes a control signal generating circuit for generating a control signal according to a number of data bits, a comparator for comparing a reference voltage to an internal voltage to generate a driving signal when the control signal is inactivated, a driving signal control circuit for inactivating the driving signal when the control signal is activated, and an internal voltage driving circuit for receiving an external power voltage and generating the internal voltage in response to the driving signal. Therefore, an internal voltage can be turned to a reference voltage level or to an external power voltage level according to the number of data input and/or output bits of a semiconductor device, and even when the number of data input and/or output bits is increased, a data access speed can be improved.

Abstract: A semiconductor memory device comprising control pads and input/output I/O pads capable of reducing the data path for reading and writing data in a cell array, and a method for driving the semiconductor memory device are included. The semiconductor memory device comprises a plurality of memory banks arranged at a cell region of a memory chip, and a plurality of control pads and a plurality of I/O pads, separately arranged from each other at the memory chip, for reading/writing data from/in the memory banks, wherein the plurality of control pads and I/O pads are dispersed at the peripheral region between adjacent memory banks and at the outer portions of the memory banks.

Abstract: A semiconductor memory device that minimizes chip area is provided. The semiconductor memory device includes local input/output (I/O) lines, global I/O lines, and a memory core that is coupled between a bit line and a complementary bit line. The memory core includes a memory cell array, a bit line equalizer circuit, a PMOS sense amplifier (S/A), a PMOS S/A driving circuit for driving the PMOS S/A, a transmission gate circuit, an NMOS S/A, and an NMOS S/A driving circuit for driving the NMOS S/A. First and second transistors for connecting the local I/O lines to the global I/O lines are installed between adjacent bit lines. The PMOS S/A driving circuit, which is a first driving transistor, and the NMOS S/A driving circuit, which is a second driving transistor, are also installed between adjacent bit lines.

Abstract: In a semiconductor memory integrated circuit (IC), a plurality of first data IO pads, a plurality of address and instruction pads, and a plurality of second data IO/address pads, are arranged in groups adjacent each other. Each of the plurality of the second data IO/address pads is used as a second data IO pad in response to a control signal when packaged into a first package form and is used as an address pad in response to the control signal when packaged into a second package form. The semiconductor memory IC of the present invention can selectively use a portion of pads as data IO pads or address/instruction pads, and thus the IC is compatible for use with different types of packages. The semiconductor memory IC of the present invention further allows for simplified wire bonding when it is packaged into different types of packages, and thus the possibility of failure of the semiconductor memory device is reduced.

Abstract: A memory charging circuit includes a read charge control circuit controlled according to a read control signal and an address value. A write charge control circuit is controlled according to a write control signal and the same or a different address value. Charging to and charging from the same data IO lines is controlled using the read charge amplifier circuit and the write charge amplifier circuit. A column select line circuit can be configured into a first arrangement where a first output is activated according to a read control signal and an address and a second output is activated according to a write control signal and the same or a different address. In a second arrangement, the first output is activated according to an address and either the read control signal or the write control signal.

Abstract: A semiconductor memory device includes a plurality of memory cell array blocks each including a plurality of partial blocks, a plurality of global word lines, and odd-numbered and even-numbered sub word lines corresponding to each of the plurality of the global word lines, the odd-numbered sub word lines of each of odd-numbered partial blocks among the plurality of the partial blocks, respectively, connected to the odd-numbered sub word lines of each of the previous neighboring partial blocks, the even-numbered sub word lines of each of the odd-numbered partial blocks among the plurality of the partial blocks, respectively, connected to the even-numbered sub word lines of each of the next neighboring partial blocks, the odd-numbered sub word lines of each of even-numbered partial blocks among the plurality of the partial blocks, respectively, connected to the odd-numbered sub word lines of each of the next neighboring partial blocks, the even-numbered sub word lines of each of the even-numbered partial blocks

Abstract: Provided are an on-die termination (“ODT”) circuit and ODT method which are capable of minimizing consumption of an on-chip DC current, and a memory system which adopts a memory device having the same, where the ODT circuit includes a termination voltage port, a data input/output (“I/O”) port, a first termination resistor, a switch, and a termination enable signal generating circuit; the termination voltage port receives termination voltage from a voltage regulator or a memory controller which is installed outside the memory device; one end of the first termination resistor is connected to the data I/O port; the switch selectively connects the termination voltage port to the other end of the first termination resistor in response to a termination enable signal; the termination enable signal generating circuit generates the termination enable signal in response to a signal which indicates a valid section of input data or that the present period is not a read period during write operatio

Abstract: Provided are a reset circuit of a data path using a clock enable signal, a reset method and a semiconductor memory device having the reset circuit. The reset circuit includes an external voltage detector and a second reset signal generator, in which the second reset signal is used to reset a block related to a data path of the semiconductor memory device. The external voltage detector detects the level of an external voltage and generates a first reset signal. The second reset signal generator performs a logical sum of an external signal, which is externally input, and the first reset signal, and generates a second reset signal. The first reset signal is used to reset blocks other than the blocks related to the data path. The external signal is a clock enable signal. In the soft reset, the blocks related to the data path are reset using the external signal which is applied at a certain level.

Abstract: A circuit for receiving data to be written in a synchronous semiconductor memory device, comprising: a first set of latches for receiving an n-bit data upon transition of an internal strobe signal; a counter for counting the number of transitions of the internal strobe signal and for outputting an indicating signal upon counting the end of a string of internal strobe signals; a second set of latches for receiving the outputs of the first set of latches, the second set of latches being clocked by the indicating signal; and a third set of latches for receiving the outputs of the second set of latches, the third set of latches being clocked by a clock signal derived from a system clock.

Abstract: A semiconductor memory device having a partial activation framework, which provides an efficient page mode operation while operating in a partial activation mode. Control circuits and methods are provided to enable a page mode operation (for read and write data accesses) in a semiconductor memory device (such as a DRAM, FCRAM) having a partial activation framework, resulting in an improved data access speed when data is written/read from memory locations having the same wordline address.