Patents by Inventor Jung Hwan Lee

Jung Hwan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Clothes treatment apparatus and control method thereof
    Patent number: 10738414
    Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may be washed effectively or refreshed.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: August 11, 2020
    Assignee: LG ELECTRONICS INC.
    Inventors: Seung Hyun Song, Hui Jae Kwon, Ki Hyuk Kim, Min Jung You, Ye Ji Um, Eun Young Jee, Ho Il Jeon, Jung Hwan Lee
  • Ferrite magnetic material and ferrite sintered magnet
    Patent number: 10720272
    Abstract: The present invention produces a ferrite magnetic material having a remarkably higher maximum energy product ((BH)max) than a conventional ferrite magnetic material through the induction of a high saturation magnetization and a high anisotropic magnetic field by simultaneously adding Co and Zn to substitute some of Fe and adjusting the content ratio of Zn/Co. In addition, the present invention can produce a desired magnetic material at a lower cost than a conventional CaLaCo-based ferrite magnetic material substituted with only Co by using Zn, which is relatively at least seven times cheaper than Co, together with Co.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: July 21, 2020
    Assignee: UNION MATERIALS CORPORATION
    Inventors: Min-Ho Kim, Dong-Young Lee, Jung-Hwan Lee
  • Metal air battery and method of manufacturing the same
    Patent number: 10720685
    Abstract: A metal air battery according to one embodiment of the present invention includes a pair of air cathodes having planar shapes respectively, which have a first bonding portion bonded along edges of the pair of the air cathodes and are disposed to face each other; a pair of separators disposed in contact with the pair of the air cathodes; an anode having a planar shape disposed between the pair of the separators and electrically insulated from the pair of the air cathodes; and then a zinc gel disposed in an accommodation space between the pair of the air cathodes. The accommodation space is a space formed by elastic deformation of the pair of the air cathodes.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: July 21, 2020
    Assignees: MEET CO., LTD., DUCKJIN CO., LTD.
    Inventors: Dong Soo Baik, Hee Taek Lee, Jung Hwan Lee, Dae Hee Lee
  • Ink composition for steel material, having excellent adhesion, method for manufacturing printed steel sheet by using same, and printed steel sheet manufactured thereby
    Patent number: 10696858
    Abstract: An ink composition for a printed steel sheet, having excellent adhesion to a steel sheet, processability, solvent resistance, and the like, a method for manufacturing a printed steel sheet using the same, and a printed steel sheet manufactured thereby, are provided. The ink composition for a steel material includes 10 to 30 parts by weight of a mixture of a urethane acrylate oligomer and another type of acrylate oligomer different from the urethane acrylate oligomer, 65 to 80 parts by weight of a radiation curable monomer which is a mixture of a monofunctional radiation curable monomer and a di- or more functional radiation curable monomer, 1 to 10 parts by weight of a photoinitiator, and 0.01 to 10 parts by weight of an adhesion promoter.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: June 30, 2020
    Assignees: POSCO, INKTEC CO., LTD.
    Inventors: Ha-Na Choi, Kyung-Pyo Yu, Jin-Tae Kim, Chan-Hee Park, Jung-Hwan Lee, Yon-Kyun Song
  • SEMICONDUCTOR DEVICE INCLUDING WORD LINE CUT
    Publication number: 20200203366
    Abstract: A semiconductor device includes a substrate having a cell region and an extension region, channel structures disposed in the cell region and extending in a first direction substantially perpendicular to an upper surface of the substrate, gate electrode layers surrounding the channel structures and stacked to be spaced apart from each other in the first direction and to extend in a second direction substantially perpendicular to the first direction, and word line cuts cutting the gate electrode layers in the first direction and continuously extending in the second direction. At least one of the word line cuts is an extension word line cut with an extension portion having an area that is different from those of the remaining word line cuts located at the same level as the at least one word line cut in a predetermined region extending in the second direction.
    Type: Application
    Filed: June 26, 2019
    Publication date: June 25, 2020
    Inventors: Young Woo Kim, Joon Young Kwon, Jung Hwan Lee, Jung Tae Sung, Ji Min Shin
  • REVERSING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
    Publication number: 20200198903
    Abstract: The inventive concept provides an apparatus for supporting a substrate. An apparatus for treating a substrate includes a process chamber that performs a predetermined process on the substrate and a reversing unit that reverses the substrate. The reverse unit includes a grip unit that grips the substrate and a drive unit that rotates the grip unit to reverse the substrate gripped by the grip unit. The grip unit includes a first body that supports one of an upper surface and a lower surface of the substrate and a second body that supports the other surface of the substrate. Each of the first body and the second body includes a support protrusion that is brought into contact with the substrate when the grip unit grips the substrate.
    Type: Application
    Filed: December 20, 2019
    Publication date: June 25, 2020
    Inventors: Seong Hyun YUN, Jung Hwan LEE, Jinseok HAM
  • Integrated semiconductor device having isolation structure for reducing noise
    Patent number: 10685953
    Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: June 16, 2020
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Hyun Chul Kim, Hee Baeg An, In Chul Jung, Jung Hwan Lee, Kyung Ho Lee
  • BIOMOLECULE IMAGING METHOD USING APTAMER
    Publication number: 20200157543
    Abstract: A composition for imaging a tumorous disease region includes a fluorescence- or radioactive isotope-labeled ERBB2 aptamer, wherein the ERBB2 aptamer labeled with a radioactive isotope or a fluorescent dye is used to image the tumorous disease region in vivo. The composition may include a labeled hybridized aptamer comprising an aptamer represented as formula 1 hybridized with a labeled-ODN represented as formula 2.
    Type: Application
    Filed: April 25, 2018
    Publication date: May 21, 2020
    Inventors: Jung Hwan LEE, Jong In KIM, Jong Hun IM, Jong Ook LEE, Jin Woo KIM
  • DATA PROCESSING METHOD AND DEVICE USING ARTIFICIAL INTELLIGENCE
    Publication number: 20200159753
    Abstract: This application relates to a new paradigm of data reasoning based on natural language inputs. A data structure based on the new paradigm is a canonical of a basic data structure in the shape of a triangle. The basic data structure includes a first node being a primary node, a second node being a context node, a third node being a resultant node. The basic data structure also includes a first link connecting the first and second nodes and configured to assign an attribute of abductive reasoning between the first and second nodes and a second link connecting the second and third nodes and configured to assign an attribute of inductive reasoning between the second and third nodes. The basic data structure further includes a third link connecting the first and third nodes and configured to assign an attribute of deductive reasoning between the first and third nodes.
    Type: Application
    Filed: January 23, 2020
    Publication date: May 21, 2020
    Inventors: Jung Hwan LEE, John H. DOE, Kyoo Ho LEE
  • SEMICONDUCTOR DEVICES
    Publication number: 20200144361
    Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.
    Type: Application
    Filed: December 23, 2019
    Publication date: May 7, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jee Yong KIM, Jung Hwan LEE
  • SEMICONDUCTOR DEVICES INCLUDING FLARED SOURCE STRUCTURES
    Publication number: 20200144290
    Abstract: A semiconductor device includes a structure including gate electrodes and interlayer insulating layers alternately stacked on an upper surface of a substrate, trenches passing through the structure; and a groove passing through a portion of the structure. The gate electrodes include word lines, and first and second select lines. The word lines are stacked in a vertical direction upwardly from the upper surface of the substrate. The first and second select lines are on the word lines, and are spaced apart from each other in a first horizontal direction parallel to the upper surface of the substrate. The trenches include a first trench and a second trench spaced apart from the first trench. The groove is on the word lines. The groove and a portion of the first trench are between the first select line and the second select line. The second trench is spaced apart from the select lines.
    Type: Application
    Filed: January 6, 2020
    Publication date: May 7, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Lee Eun Ku, Jae Ho Jeong, Woo Sung Yang, Jung Hwan Lee, In Su Noh, Sun Young Lee
  • METHOD FOR PREPARATION OF AN IMPLANT FOR REGENERATING DENTAL TISSUE
    Publication number: 20200138676
    Abstract: The present invention relates to a dental cement composition including a tricalcium silicate powder and a dicalcium silicate powder, a method for preparation of an implant for regenerating a tissue including a tricalcium silicate powder and a dicalcium silicate powder, and a kit for preparing a dental cement including a tricalcium silicate powder and a dicalcium silicate powder.
    Type: Application
    Filed: August 6, 2019
    Publication date: May 7, 2020
    Inventors: Hae-Won Kim, Ho-Jin Moon, Jung-Hwan Lee
  • Transparent member for automobile interior parts
    Patent number: 10596960
    Abstract: The present invention relates to a transparent member for an automotive interior part. In one embodiment, the transparent member for the automotive interior part includes: a light source; an optical pattern layer formed over the light source; and a first light-transmitting skin layer formed on the optical pattern layer and including about 1 part by weight to about 25 parts of a first inorganic filler dispersed in 100 parts by weight of a first transparent resin matrix, wherein the first inorganic filler includes spherical calcium carbonate (CaCO3).
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: March 24, 2020
    Assignees: HYUDAI MOBIS CO., LTD., DAEWON CHEMICAL CO., LTD.
    Inventors: Sang Phil Park, Hyeon Don Kim, Jung Hwan Lee, Young Kyu Rhim, Mi Jeong Jeon
  • High-solid coating composition and coating method using the same
    Patent number: 10577517
    Abstract: A high-solid coating composition may include about 70 wt % to about 80 wt % of an acrylic resin; and about 15 wt % to about 21 wt % of a solvent, wherein a content of non-volatile components (NVs) is about 55 wt % to about 60 wt %, a solid by volume ratio (SVR) is about 50% to about 55%, and a combination factor (CF) value being an appearance evaluation index is about 78% or more.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: March 3, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation, Hyundai Mobis Co., Ltd.
    Inventors: Hee Joon Lee, Ki Wan Park, Young Ho Choi, Jong Yang Park, Ju Hyun Kim, Chang Myung Song, Jung Hwan Lee
  • Semiconductor memory apparatus
    Patent number: 10580480
    Abstract: A semiconductor memory apparatus includes a driving voltage providing circuit suitable for selectively providing a first driving voltage, a second driving voltage, a third driving voltage, a ground voltage, and a precharge voltage to a first driving line and a second driving line in response to an active signal, a cell characteristic information signal, and a precharge signal. The semiconductor memory apparatus also includes a sense amplifier suitable for operating by being applied with voltages provided from the first and second driving lines.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: March 3, 2020
    Assignee: SK hynix Inc.
    Inventors: Jung Hwan Lee, Dae Yong Shim, Kang Seol Lee
  • Glypican-3 specific aptamer and use thereof
    Patent number: 10577609
    Abstract: The present invention relates to a DNA aptamer specifically binding to a hepatocellular carcinoma-related Glypican-3 (GPC3) protein, treatment of cancers related to the Glypican-3 protein using the same, a composition for inhibiting a cancer and a composition for diagnosing a cancer comprising the same as an active ingredient.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: March 3, 2020
    Assignees: POSTECH ACADEMY—INDUSTRY FOUNDATION, SEOUL NATIONAL UNIVERSITY HOSPITAL, YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF)
    Inventors: Eun Ju Oh, Jung Hwan Lee, Jong-Hoon Lim, Jong In Kim, Jung Hwan Yoon, Sung Ho Ryu, Jeong-Hoon Lee, Won Jun Kang, Seong Hui Jin
  • THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
    Publication number: 20200051998
    Abstract: A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Inventors: Jung Hwan LEE, Jee Yong KIM, Seok Jung YUN, Ji Hyeon LEE
  • SEMICONDUCTOR DEVICE
    Publication number: 20200027496
    Abstract: A semiconductor device includes a soft repair control circuit configured to generate an enable signal, in response to a soft repair control signal, wherein the enable signal is enabled when first and second internal addresses counted in a refresh operation have the same combination as first and second failure addresses, and the semiconductor device also includes a core circuit including first, second, third, and fourth regions each including a plurality of word lines which are activated based on a combination of the first, the second, third, and fourth internal addresses, wherein the core circuit is configured to repair, in response to the enable signal, a word line in which a failure has occurred and which is included in a region selected among the first, second, third, and fourth regions by the third and fourth internal addresses.
    Type: Application
    Filed: November 26, 2018
    Publication date: January 23, 2020
    Applicant: SK hynix Inc.
    Inventor: Jung Hwan LEE
  • Semiconductor devices including flared source structures
    Patent number: 10529734
    Abstract: A semiconductor device can include a semiconductor substrate having a memory cell region and a pad region that is adjacent to the memory cell region, the pad region can include a first pad region, a second pad region between the memory cell region and the first pad region, and a buffer region that is between the first and second pad regions. A separation source structure can include a first portion and a second portion that are parallel to each other in a plan view of the semiconductor device. A first source structure and a second source structure can be disposed between the first and second portions of the separation source structure, where the first and second source structures can have end portions that oppose each other, the first source structure being disposed in the first pad region, and the second source structure being disposed in the second pad region.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: January 7, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Lee Eun Ku, Jae Ho Jeong, Woo Sung Yang, Jung Hwan Lee, In Su Noh, Sun Young Lee
  • Water storage tank bladder, manufacturing method therefor, water storage tank including bladder, and water treatment apparatus including water storage tank
    Patent number: 10507954
    Abstract: Disclosed are a water storage tank bladder, a manufacturing method therefor, the water storage tank including the bladder, and a water treatment apparatus including the water storage tank. According to one embodiment of the present invention, the water storage tank bladder used in the water storage tank to receive and store water and discharge the stored water has a lower side of which the thickness can be thicker than the thickness of the upper side of the bladder and thicker than the thickness of the lateral sides of the bladder.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: December 17, 2019
    Assignee: Coway Co., Ltd
    Inventors: Jong-Hwan Lee, In-Du Choi, Jung-Hwan Lee, Woo-Jin Joo, Hyun-Soo Shin, Tae-Seong Kwon, Hyoung-Min Moon