Abstract: A semiconductor package includes: a first redistribution substrate; a semiconductor chip provided on the first redistribution substrate; a molding material molding the semiconductor chip and the first redistribution substrate; and a second redistribution substrate provided on the molding material, wherein the second redistribution substrate includes: at least one redistribution line; a metal pad; and a dielectric layer molding the at least one redistribution line and the metal pad, wherein the dielectric layer includes a marking region on the metal pad, and the metal pad includes a plurality of concave portions.

Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: A semiconductor device includes a first semiconductor die and a second semiconductor die connected to the first semiconductor die. Each of the first semiconductor die and the second semiconductor die includes a substrate, a conductive bump formed on the substrate and a conductive contact formed on the conductive bump. The conductive contact has an outer lateral sidewall, there is an inner acute angle included between the outer lateral sidewall and the substrate is smaller than 85°, and the conductive contact of the first semiconductor die is connected opposite to the conductive contact of the second semiconductor die.

Abstract: A semiconductor structure includes a semiconductor element and a first bonding structure. The semiconductor element has a first surface and a second surface opposite to the first surface. The first bonding structure is disposed adjacent to the first surface of the semiconductor element, and includes a first electrical connector, a first insulation layer surrounding the first electrical connector and a first conductive layer surrounding the first insulation layer.

Abstract: A powered industrial truck includes a lateral movement assembly including four sliding members and four pivotal members both on a wheeled carriage, four links having a first end pivotably secured to the sliding member and a second end pivotably secured to either end of the pivotal member, a motor shaft having two ends pivotably secured to the pivotal members respectively, a first electric motor on one frame member, and four mounts attached to the sliding members respectively; two lift assemblies including a second electric motor, a shaft having two ends rotatably secured to the sliding members respectively, two gear trains at the ends of the shaft respectively, a first gear connected to the second electric motor, a second gear on the shaft, and a first roller chain on the first and second gears; two electric attachments on the platform and being laterally moveable, each attachment. The mount has rollers.

Abstract: A method includes designing a plurality of cells for a semiconductor device, wherein designing the plurality of cells comprises reserving a routing track of a plurality of routing tracks within each of the plurality of cells, wherein each of the plurality of cells comprises signal lines, and the reserved routing track is free of the signal lines. The method includes placing a first cell and a second cell of the plurality of cells in a layout of the semiconductor device. The method includes determining whether any power rails overlap with any of the plurality of routing tracks other than the reserved routing track in the second cell. The method includes adjusting a distance between the first cell and the second cell in response to a determination that at least one power rail overlaps with at least one routing track other than the reserved routing track.

Abstract: A chip package which includes a glass fiber substrate made of FR-4 fiberglass is provided. The chip package further includes a substrate pad which is a stacked metal structure with a certain thickness and composed of a nickel layer, a palladium layer, and a gold layer, or a nickel layer and a gold layer stacked over at least one first circuit layer in turn. A total thickness of the substrate pad is 3.15-5.4 ?m. The glass fiber substrate and the substrate pad can bear positive pressure generated during wire bonding. Thereby at least one solder joint is formed on the substrate pad precisely and integrally. This helps reduction in material cost for manufacturers.

Abstract: A wafer adsorption device has a base, a guiding ring, and a cover. An inlet is formed through the base. The guiding ring is mounted on the base and includes a ring body and multiple bumps, the bumps protrude from a top surface of the ring body and are spaced from each other. Multiple flow channels are recessed from a surface of the cover, and each one of the flow channels is arc-shaped. An end of each one of the flow channels is connected to each other and fluidly communicates to the inlet, and another end extends outward. The cover is mounted in the ring body and securely mounted on the base, and the cover is spaced apart from the guiding ring. Therefore, when placing a wafer on the wafer adsorption device, a contacting area of the wafer may be reduced to further reduce a probability of scratching.

Abstract: A method of forming a package structure includes an etching step, a laser step, a plating step and a singulation step. In the etching step, a plurality of cutting streets of a leadframe are etched. In the laser step, a plastic package material covering on each of the cutting streets is removed via a laser beam. In the plating step, a plurality of plating surfaces are disposed on a plurality of areas of the leadframe without the plastic package material. In the singulation step, the cutting streets of the leadframe are cut to form the package structure.

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

Abstract: In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

Abstract: A light emitting module includes a carrier, a light emitting element, a reflection layer, and a fluorescent layer. The light emitting element is disposed on the carrier. The reflection layer is disposed on the carrier and surrounds the light emitting element. The fluorescent layer covers at least part of the light emitting element. The disadvantages of over broad light emitting angle and low illuminance may be solved. Comparing with the related art, the present disclosure achieves an object of increasing the illuminance by at least 10%.

Abstract: A chip package having die pads with protective layers is provided. At least one protective layer is covering and arranged at a peripheral zone of at least one die pad for minimizing area of the die pad exposed outside as well as shielding and protecting the peripheral zone of the die pad. A weld zone of the die pad is not covered by the protective layer so that the weld zone of the die pad is exposed. In a crossed-over state, one of bonding wires crossing one of the die pads with a corresponding connection pad of a carrier plate will not get across a second upper space defined by the weld zone of the rest of the die pads. Thereby the one of the bonding wires can be more isolated by the protective layers on the peripheral zones of the rest of the die pads.

Abstract: A semiconductor package comprising a package substrate that extends in a first direction and a second direction perpendicular to the first direction, a plurality of logic dies and a memory stack structure on the package substrate, and an interposer substrate mounted in the package substrate. The memory stack structure vertically overlaps the interposer substrate. Each of the logic dies includes a first part that is horizontally offset from the interposer substrate and a second part that vertically overlaps the interposer substrate. The interposer substrate includes an interlayer dielectric layer and a plurality of wiring lines in the interlayer dielectric layer. The memory stack structure is electrically connected to at least one of the logic dies through the wiring lines of the interposer substrate.

Abstract: A chip package with at least one electromagnetic interference (EMI) shielding layer and at least one ground wire and a method of manufacturing the same are provided. The chip package includes a chip package unit, at least one EMI shielding layer, and at least one ground wire. The ground wire which consists of a first end and a second end opposite to the first end is inserted through the EMI shielding layer and a first insulating layer of the chip package unit. The first end is electrically connected with the EMI shielding layer while the second end of the ground wire is electrically connected with at least one grounding end of at least one first circuit layer of the chip package unit for protection against static electricity. Thereby malfunction of an electronic system with semiconductor chips due to static electricity can be avoided.

Abstract: The present invention relates to a novel-structured nucleic acid complex having a blood-brain barrier penetration ability and a composition comprising same and, more specifically, to a nucleic acid complex in which a bioactive nucleic acid is complementarily bound to a carrier peptide nucleic acid modified to be generally positively charged, and to a composition for blood-brain barrier penetration comprising same. The nucleic acid complex according to the present invention can penetrate the blood-brain barrier at excellent efficiency, and especially, the conjugation of a drug into the nucleic acid complex increases the blood-brain barrier penetration ability of the drug, and thus is very useful in treatment or diagnosis of diseases.

Abstract: A semiconductor structure includes a first tier, a redistribution circuit structure, and a second tier. The first tier includes at least one first die. The redistribution circuit structure is disposed on the first tier and electrically coupled to the at least one first die, where the redistribution circuit structure has a multi-layer structure and includes a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure. The second tier includes a plurality of second dies, and is disposed on and electrically coupled to the redistribution circuit structure.

Abstract: A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.