Abstract: A variable resistance memory device includes a memory cell structure on a substrate, the memory cell structure including conductive layers, each of the conductive layers including conductive lines spaced apart from each other in a direction parallel to a top surface of the substrate, and memory cell arrays alternatingly stacked with the conductive layers in a first direction perpendicular to a top surface of the substrate, a first peripheral circuit layer between the substrate and the memory cell structure, the first peripheral circuit layer including first transistors, and a second peripheral circuit layer between the first peripheral circuit layer and the memory cell structure, the second peripheral circuit layer including second transistors, and the second transistors including core transistors that are connected to corresponding ones of the conductive lines.

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

Abstract: Embodiments relate to a dynamic image capturing method and apparatus using an arbitrary viewpoint image generation technology, in which an image of background content displayed on a background content display unit or an image of background content implemented in a virtual space through a chroma key screen, having a view matching to a view of seeing a subject at a viewpoint of a camera is generated, and a final image including the image of the background content and a subject area is obtained.

Abstract: Embodiments relate to a human behavior recognition system using hierarchical class learning considering safety, the human behavior recognition system including a behavior class definer configured to form a plurality of behavior classes by sub-setting a plurality of images each including a subject according to pre-designated behaviors and assign a behavior label to the plurality of images, a safety class definer configured to calculate a safety index for the plurality of images, form a plurality of safety classes by sub-setting the plurality of images based on the safety index, and additionally assign a safety label to the plurality of images, and a trainer configured to train a human recognition model by using the plurality of images defined as hierarchical classes by assigning the behavior label and the safety label as training images.

Abstract: A display apparatus includes: a first electrode; a bank layer defining a first opening which overlaps the first electrode in a plan view; an emission layer which overlaps the first electrode through the first opening; a second electrode on the emission layer; an encapsulation layer on the second electrode; a first insulating layer on the encapsulation layer, where the first insulating layer includes a first portion overlapping the first opening and defines a trench surrounding the first portion; a touch electrode on the first insulating layer; a second insulating layer on the touch electrode and defining a second opening which overlaps the first opening; and a third insulating layer on the second insulating layer.

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

Abstract: A semiconductor device includes a substrate and memory cell arrays arranged on the substrate in a first direction and second direction. The first direction and second direction are parallel to a top surface of the substrate and intersect each other. The memory cell arrays include a plurality of memory cells. A cell dummy pattern on the substrate is arranged between the memory cell arrays in at least one of the first direction and second direction and extends along a side of the memory cell arrays. A cell conductive pattern is included on the substrate. A cell contact plug is configured to connect the cell dummy pattern and the cell conductive pattern. The cell contact plug is arranged between the cell dummy pattern and the cell conductive pattern in a third direction that is perpendicular to the first direction and the second direction.

Abstract: A variable resistance memory device including a substrate; first and second transistors on the substrate; first conductive lines on the transistors, each of the first conductive lines extending in a first direction, and the first conductive lines being spaced apart from each other; first contact plugs directly contacting substrate-facing surfaces of the first conductive lines, the first contact plugs being electrically connected to the first transistors, respectively; second conductive lines on the first conductive lines, each of the second conductive lines extending in the second direction, and the second conductive lines being spaced apart from each other; second contact plugs directly contacting substrate-facing surfaces of the second conductive lines, the second contact plugs being electrically connected to the second transistors, respectively; and memory units between the conductive lines, wherein each of the second contact plugs does not overlap with any of the memory units in the third direction.

Abstract: A display device includes: a substrate; two pixel circuits on the substrate spaced apart from each other with a transmission area therebetween, each of the two pixel circuits including a transistor and a storage capacitor; two display elements respectively electrically coupled to the two pixel circuits; a bottom metal layer between the substrate and the two pixel circuits and including a through hole at the transmission area; an encapsulation member on the two display elements; and an optical functional layer on the encapsulation member, wherein the optical functional layer includes: a first layer including a first opening, second openings, and a first slope portion, the first opening at the transmission area, the second openings corresponding to each of the two display elements, and the first slope portion being around the transmission area; and a second layer on the first layer.

Abstract: Disclosed are an X-RAY image reading support method including the steps of acquiring a target X-RAY image photographed by transmitting or reflecting X-RAY in a reading space in which an object to be read is disposed; applying the target X-RAY image to a reading model that extracts features from an input image; and identifying the object to be read as an object corresponding to a classified class when the object to be read is classified as a set class based on a first feature set extracted from the target X-RAY image, and an X-RAY image reading support system performing the method.

Abstract: An organic light-emitting display apparatus includes a substrate; thin film transistors; a protective layer that includes a plurality of concave-convex units disposed in a pixel area; an organic light-emitting device disposed on the protective layer; and an encapsulation unit that covers the organic light-emitting device. Each of the concave-convex units protrudes from a surface of the protective layer. The organic light-emitting device includes a pixel electrode, an emission layer, and an opposite layer sequentially stacked on the concave-convex unit, and a distance between the pixel electrode and the opposite electrode is determined by 5%?(a/b)?18%, wherein ‘a’ is a vertical distance with respect to the surface of the protective layer between the pixel electrode and the opposite electrode and ‘b’ is a minimum distance between the pixel electrode and the opposite electrode.

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a display element arranged on the substrate in the display area, an encapsulation layer arranged on the display element, a first insulating layer arranged on the encapsulation layer and including a first opening that corresponds to a light-emitting area of the display element, and a second insulating layer covering the first insulating layer. A second refractive index of the second insulating layer is greater than a first refractive index of the first insulating layer, and a side surface of the first insulating layer defining the first opening includes a staircase-shaped step.

Abstract: A semiconductor memory device is disclosed. The device may include a device isolation layer in a substrate to define first and second active portions, a first contact on the substrate, first and second memory cells spaced apart from the first contact in a first direction by first and second distances, respectively, first and second conductive lines connected to the first and second memory cells, respectively, and extending in a second direction, and first and second selection transistors respectively connected to the first and second conductive lines. A length of a bottom surface of a first gate electrode of the first selection transistor overlapping the first active portion in a third direction may be different from a length of a bottom surface of a second gate electrode of the second selection transistor overlapping the second active portion in the third direction.

Abstract: Provided is a display apparatus having improved reliability by effectively controlling spreading of an organic layer. The display apparatus includes a substrate including a display area, and a peripheral area outside the display area, a display element at the display area, an input-sensing layer over the display element, and an optical functional layer on the input-sensing layer, and including a first layer, which corresponds to the display area and the peripheral area, and a second layer on the first layer, and having a greater refractive index than the first layer, wherein the first layer defines a first valley portion defining first holes that is on the peripheral area, and that surrounds the second layer.

Abstract: A semiconductor packaging apparatus and methods of manufacturing semiconductor devices using the same. The semiconductor packaging apparatus includes a process unit, and a controller associated with the process unit. The process unit includes a bonding part that bonds a semiconductor substrate and a carrier substrate to each other to form a bonded substrate, a cooling part that cools the bonded substrate, and a detection part in the cooling part and configured to detect a defect of the bonded substrate. The controller is configured to control the process unit using data obtained from the detection part.

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

Abstract: A method of manufacturing a semiconductor package includes preparing a core substrate having an upper surface and a lower surface, and including a cavity. A passive component is disposed in the cavity. A first insulating layer is formed on the upper surface of the core substrate and in the cavity and encapsulates the passive component. Through-vias are formed that penetrate the core substrate and the first insulating layer, and a first wiring layer is formed on the first insulating layer. The first wiring layer connects the through-vias and the passive component. A connection structure including an insulating member is formed on the first insulating layer and a redistribution layer is formed in the insulating member. The redistribution layer is connected to the first wiring layer. A semiconductor chip is disposed on an upper surface of the connection structure. The semiconductor chip has connection pads connected to the redistribution layer.

Abstract: A display device includes: a substrate; two pixel circuits on the substrate spaced apart from each other with a transmission area therebetween, each of the two pixel circuits including a transistor and a storage capacitor; two display elements respectively electrically coupled to the two pixel circuits; a bottom metal layer between the substrate and the two pixel circuits and including a through hole at the transmission area; an encapsulation member on the two display elements; and an optical functional layer on the encapsulation member, wherein the optical functional layer includes: a first layer including a first opening, second openings, and a first slope portion, the first opening at the transmission area, the second openings corresponding to each of the two display elements, and the first slope portion being around the transmission area; and a second layer on the first layer.

Abstract: Embodiments relate to a method for supporting X-ray image reading including receiving information associated with a reading target positioned in a reading space where X-rays pass through or are reflected off, acquiring a non X-RAY image of an item object based on the information associated with the reading target, and generating a fake X-RAY image of the item object by applying the non X-RAY image of the item object to the image transform model, and a system for performing the same.

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.