Patents by Inventor Junichi Sasaki

Junichi Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515426
    Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: November 29, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Toshinari Sasaki, Katsuaki Tochibayashi, Shunpei Yamazaki
  • Patent number: 11488807
    Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: November 1, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Kota Shihommatsu, Junji Ishibashi, Junichi Sasaki, Hidetoshi Hanaoka
  • Publication number: 20220336193
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: July 1, 2022
    Publication date: October 20, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Publication number: 20220301809
    Abstract: A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.
    Type: Application
    Filed: September 10, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Junichi HASHIMOTO, Toshiyuki SASAKI
  • Publication number: 20220287218
    Abstract: A control system for a work vehicle that performs auto-steer driving includes a storage to store a target path for the work vehicle, and a controller configured or programmed to control steering of the work vehicle so that the work vehicle travels along the target path based on a position of the work vehicle identified by a position identifier and the target path stored in the storage. The target path includes parallel main paths and one or more turning paths interconnecting the plurality of main paths. When the work vehicle is turning along one of the turning paths via automatic steering, if the position of the work vehicle becomes deviated from the turning path by more than a reference distance, the controller is configured or programmed to cause an alarm generator to output an alarm.
    Type: Application
    Filed: March 14, 2022
    Publication date: September 15, 2022
    Inventors: Junichi YUASA, Ryo KURATA, Hiroaki SASAKI, Yuji OKUYAMA
  • Publication number: 20220285170
    Abstract: A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.
    Type: Application
    Filed: June 14, 2021
    Publication date: September 8, 2022
    Applicant: Kioxia Corporation
    Inventors: Junichi HASHIMOTO, Toshiyuki SASAKI
  • Publication number: 20220285562
    Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
    Type: Application
    Filed: May 23, 2022
    Publication date: September 8, 2022
    Inventors: Junichi KOEZUKA, Yukinori SHIMA, Hajime TOKUNAGA, Toshinari SASAKI, Keisuke MURAYAMA, Daisuke MATSUBAYASHI
  • Patent number: 11428981
    Abstract: A liquid crystal display panel includes pixels including a reflective region for display in a reflection mode and a transmissive region for display in a transmission mode. The liquid crystal display panel includes a liquid crystal layer including a nematic liquid crystal material having negative dielectric anisotropy and a chiral agent, a pixel electrode including a reflective conductive layer and a transparent conductive layer, a counter electrode, a light diffusing structure provided in common to the reflective region and the transmissive region, and a first vertical alignment film provided between the pixel electrode and the liquid crystal layer, and a second vertical alignment film provided between the counter electrode and the liquid crystal layer.
    Type: Grant
    Filed: November 26, 2020
    Date of Patent: August 30, 2022
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Takahiro Sasaki, Hiroyuki Hakoi, Takashi Satoh, Junichi Hashimoto, Ming Ni
  • Patent number: 11417500
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: August 16, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Junichi Sasaki, Yasuharu Sasaki, Hidetoshi Hanaoka, Tomohiko Akiyama
  • Publication number: 20220252778
    Abstract: An illumination display panel that forms part of a housing and has a display portion for illuminated display comprises a resin panel having a first molded portion made of an opaque resin at a portion excluding the display portion, and a second molded portion disposed on the back surface side of the first molded portion and made of a light-transmitting resin having a protrusion where the first molded portion is not present. The protrusion is fitted to the first molded portion. A light source mounting substrate is disposed on the back surface side of the resin panel. At least a light source of the light source mounting substrate is sealed by the second molded portion. An integrally molded product of the light source mounting substrate and the second molded portion is filled and solidified at a low pressure while compressing a cavity of a molding mold.
    Type: Application
    Filed: August 17, 2020
    Publication date: August 11, 2022
    Inventors: Chuzo TANIGUCHI, Ryomei OMOTE, Junichi SHIBATA, Jun SASAKI, Yoshihiro SAKATA, Toshifumi KUROSAKI, Shohei MORIMOTO
  • Patent number: 11398116
    Abstract: An anomaly detection electronic control unit connected to an in-vehicle network includes: a communicator that receives a first communication message indicating speed information of a vehicle including the in-vehicle network and a second communication message indicating peripheral information of the vehicle; a processor; and a memory including at least one set of instructions that, when executed by the processor causes the processor to perform operations including: (A) determining a first traveling state of the vehicle based on the speed information and a second traveling state of the vehicle based on the peripheral information; (B) determining, by comparing the first traveling state with the second traveling state, that the first communication message is anomalous when the first traveling state is different from the second traveling state; and (C) executing processing to handle an anomaly when the first communication message is determined to be anomalous.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: July 26, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA
    Inventors: Junichi Tsurumi, Takamitsu Sasaki
  • Patent number: 11393918
    Abstract: In a top-gate transistor in which an oxide semiconductor film, a gate insulating film, a gate electrode layer, and a silicon nitride film are stacked in this order and the oxide semiconductor film includes a channel formation region, nitrogen is added to regions of part of the oxide semiconductor film and the regions become low-resistance regions by forming a silicon nitride film over and in contact with the oxide semiconductor film. A source and drain electrode layers are in contact with the low-resistance regions. A region of the oxide semiconductor film, which does not contact the silicon nitride film (that is, a region overlapping with the gate insulating film and the gate electrode layer) becomes the channel formation region.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: July 19, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Toshinari Sasaki
  • Patent number: 11383875
    Abstract: A double container includes: an outer layer body including an outer mouth portion and a barrel portion; an inner layer body including an inner mouth portion and a containing portion; an outside air introduction port for introducing outside air; and a plurality of vertical ribs arranged with spacing in a circumferential direction on an inner surface of the outer layer body or an outer surface of the inner layer body, and each extending over the outer mouth portion to the shoulder portion or extending over the inner mouth portion to the containing portion, wherein at least one of the plurality of vertical ribs faces the outside air introduction port.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: July 12, 2022
    Assignee: YOSHINO KOGYOSHO CO., LTD.
    Inventors: Masato Suzuki, Junichi Chiba, Masaaki Sasaki
  • Publication number: 20220157573
    Abstract: An edge ring disposed around a processing target substrate includes a first member of an annular shape, which is made of a first material and has a first inclined portion at a lower portion of an inner peripheral side surface thereof; and a second member of an annular shape, which is made of a second material different from the first material and has a second inclined portion facing the first inclined portion, the second member being provided under the first member.
    Type: Application
    Filed: November 10, 2021
    Publication date: May 19, 2022
    Inventors: Junichi Sasaki, Masashi Ikegami, Mitsuaki Sato, Kazuhiko Akahane
  • Patent number: 11037815
    Abstract: A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: June 15, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Yasuharu Sasaki, Katsunori Hirai, Junichi Sasaki
  • Publication number: 20210162468
    Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.
    Type: Application
    Filed: November 24, 2020
    Publication date: June 3, 2021
    Inventors: Takamitsu TAKAYAMA, Junichi SASAKI
  • Patent number: 10990060
    Abstract: A fixing device includes a body and a cover. The body includes a roller and a positioning projection projecting from the body. The cover is supported on one end side in an axial direction of the roller and has a slot in which the positioning projection is inserted. The cover is configured to pivot on the positioning projection inserted in the slot, from a closed position to a retreated position from the body.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: April 27, 2021
    Assignee: RICOH COMPANY, LTD.
    Inventors: Atsushi Ashikagaya, Masashi Ohi, Junichi Sasaki, Yasunobu Kidoura, Yuuto Akiba
  • Publication number: 20210118647
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: September 22, 2020
    Publication date: April 22, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Publication number: 20210074520
    Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.
    Type: Application
    Filed: August 28, 2020
    Publication date: March 11, 2021
    Inventors: Kota SHIHOMMATSU, Junji ISHIBASHI, Junichi SASAKI, Hidetoshi HANAOKA
  • Patent number: 10847348
    Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: November 24, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Toshiya Tsukahara, Shuhei Yamabe, Kota Yachi, Tetsuji Sato, Yohei Uchida, Ayuta Suzuki, Yosuke Tamura, Hidetoshi Hanaoka, Junichi Sasaki