Abstract: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

Abstract: An charging device includes: capacitors connected in series; a charging unit that charges the capacitors; bypass units, each respectively connects in parallel to each capacitors, wherein each bypass unit causes, when a charged voltage of any capacitor has reached a set voltage, a charging current to bypass the capacitor whose charged voltage has reached the set voltage; and a control unit that controls the charging unit to charge the capacitors in such a manner that, when a charging voltage of the any capacitor has reached the set voltage, the control unit causes the charging unit to reduce the charging current, and if a predetermined period has elapsed since the charging voltage has reached the set voltage, and if a charging voltage of any of the other capacitors has not reached the set voltage after the predetermined period, the control unit causes the charging unit to increase the charging current.

Abstract: An charging device includes: capacitors connected in series; a charging unit that charges the capacitors; bypass units, each respectively connects in parallel to each capacitors, wherein each bypass unit causes, when a charged voltage of any capacitor has reached a set voltage, a charging current to bypass the capacitor whose charged voltage has reached the set voltage; and a control unit that controls the charging unit to charge the capacitors in such a manner that, when a charging voltage of the any capacitor has reached the set voltage, the control unit causes the charging unit to reduce the charging current, and if a predetermined period has elapsed since the charging voltage has reached the set voltage, and if a charging voltage of any of the other capacitors has not reached the set voltage after the predetermined period, the control unit causes the charging unit to increase the charging current.

Abstract: Information processing equipment includes a photoelectric conversion module disposed on a circuit substrate, a first optical connector connected to the photoelectric conversion module through a plurality of first optical fibers and disposed to an edge portion of the circuit substrate, and a second optical connector disposed on an optical backplane and optically connected to the first optical connector. The disposing direction of the optical fibers in the photoelectric conversion module is in nonparallel with the main surface of the circuit substrate and the disposing direction of the optical fibers in the first optical connector and the disposing direction of the optical fibers in the second optical connector are in nonparallel with the main surface of the circuit substrate.

Abstract: A connector holder fixes an optical connector assembled at a leading end of an optical fiber to an optical module having a light input/output end so that the optical fiber and the light input/output end is optically connected. The connector holder is provided with a holding section for storing at least a part of the optical connector, and a cover section attached to the holding section to be freely opened and closed. The cover section is provided with a cover section main body, and a pressing section which presses the optical connector toward the optical module.

Abstract: An optical module includes: an optical device mounting board including a first surface, a second surface on the reverse side, and a light transparent part allowing an emitted light traveling from the first surface to the second surface and a received light traveling in the opposite direction to pass through the transparent part; an optical device mounted on the first surface, which is a light emitting device or a light receiving device; a first terminal mounted on a surface except the first surface of the optical device mounting board; a wiring connecting a second terminal of a component mounted on the first surface including the optical device with the first terminal; and a transmission medium connector connecting a light transmission medium transmitting the emitted light traveling from the second surface to an outside of the optical module or the received light traveling in the opposite direction.

Abstract: An optical backplane connector with a board removable (being possible to insert and remove) therein in the direction perpendicular to the backplane plate surface is arranged on a backplane having optical transmission paths. The optical backplane connector accommodates a photoelectric conversion module in such a manner the incident and exit light are perpendicular to the backplane and a transparent board with a photoelectric conversion element mounted thereon is perpendicular to the board and parallel to the backplane. The conduction between the electric contacts of the photoelectric conversion module and the inner electric contacts of the optical backplane connector is held by mechanical contact. At the end portion of the optical transmission path on the backplane, an optical connector having a 45? mirror and guide pins is mounted. The positioning operation is achieved by fitting the guide pins of the optical connector with the guide holes of the photoelectric conversion module.

Abstract: A connector holder fixes an optical connector assembled at a leading end of an optical fiber to an optical module having a light input/output end so that the optical fiber and the light input/output end is optically connected. The connector holder is provided with a holding section for storing at least a part of the optical connector, and a cover section attached to the holding section to be freely opened and closed. The cover section is provided with a cover section main body, and a pressing section which presses the optical connector toward the optical module.

Abstract: A connector holder fixes an optical connector assembled at a leading end of an optical fiber to an optical module having a light input/output end so that the optical fiber and the light input/output end is optically connected. The connector holder is provided with a holding section for storing at least a part of the optical connector, and a cover section attached to the holding section to be freely opened and closed. The cover section is provided with a cover section main body, and a pressing section which presses the optical connector toward the optical module.

Abstract: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

Abstract: A mounting structure, in which semiconductor package 1 and heat sink 8 for dissipating heat generated from semiconductor package 1 are mounted on mounting board 3. The rear surface of semiconductor package 1 is bonded to the front surface of mounting board 3 facing the rear surface. Heat sink 8 is brought into contact with the rear surface of semiconductor package 1 via through-ole 5 formed on mounting board 3. Semiconductor package 1 and heat sink 8 are pressed to each other by the elastic force of clip 6.

Abstract: An charging device includes: capacitors connected in series; a charging unit that charges the capacitors; bypass units, each respectively connects in parallel to each capacitors, wherein each bypass unit causes, when a charged voltage of any capacitor has reached a set voltage, a charging current to bypass the capacitor whose charged voltage has reached the set voltage; and a control unit that controls the charging unit to charge the capacitors in such a manner that, when a charging voltage of the any capacitor has reached the set voltage, the control unit causes the charging unit to reduce the charging current, and if a predetermined period has elapsed since the charging voltage has reached the set voltage, and if a charging voltage of any of the other capacitors has not reached the set voltage after the predetermined period, the control unit causes the charging unit to increase the charging current.

Abstract: A mounting structure, in which semiconductor package 1 and heat sink 8 for dissipating heat generated from semiconductor package 1 are mounted on mounting board 3. The rear surface of semiconductor package 1 is bonded to the front surface of mounting board 3 facing the rear surface. Heat sink 8 is brought into contact with the rear surface of semiconductor package 1 via through-ole 5 formed on mounting board 3. Semiconductor package 1 and heat sink 8 are pressed to each other by the elastic force of clip 6.

Abstract: Provided are a storage medium and a cleaning method of a plasma processing apparatus capable of more securely removing a deposit and preventing occurrence of any problems caused by a remaining deposit as compared to the conventional method. A cleaning gas which contains an oxygen gas and a nitrogen gas and has a ratio of “nitrogen gas flow rate/(nitrogen gas flow rate+oxygen gas flow rate)” in a range from about 0.05 to about 0.5 is introduced into a processing chamber when a substrate is not mounted on a mounting table, and, then, the inside of the processing chamber is cleaned by applying a high frequency power between the mounting table and an upper electrode and exciting the cleaning gas into plasma.

Abstract: A semiconductor device has printed wiring board (11) where electric wiring (18) connected to LSI chip (17) and to planar optical element (21) is formed, and where optical waveguide (25) which transfers light inputted into planar optical element (21) and/or light outputted from planar optical element (21) is fixed. Planar optical element (21) is mounted in one end of small substrate (13), and another end of small substrate (13) is connected to printed wiring board (11) by solder bump (26). One end of small substrate (13) where planar optical element (21) is mounted is fixed to printed wiring board (11) by a fixing mechanism. Small substrate (13) has flexible section (15), which is easily deformable compared with other portions of printed wiring board (11) and small substrate (13), in at least a partial region between one end where planar optical element (21) is mounted and another end electrically connected to printed wiring board (11).

Abstract: A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.

Abstract: The present invention relates to a columnar crystal silicon having a high strength. In the case where plasma etching device parts such as a focus ring, an upper electrode plate, and a shield ring which are formed from a high-strength columnar crystal silicon ingot having an interstitial oxygen concentration within a range of 1×1018 to 2×1018 atms/cm3, it is possible to further increase the diameters of these parts without increasing their thicknesses.

Abstract: An optical module includes: an optical device mounting board including a first surface, a second surface on the reverse side, and a light transparent part allowing an emitted light traveling from the first surface to the second surface and a received light traveling in the opposite direction to pass through the transparent part; an optical device mounted on the first surface, which is a light emitting device or a light receiving device; a first terminal mounted on a surface except the first surface of the optical device mounting board; a wiring connecting a second terminal of a component mounted on the first surface including the optical device with the first terminal; and a transmission medium connector connecting a light transmission medium transmitting the emitted light traveling from the second surface to an outside of the optical module or the received light traveling in the opposite direction.

Abstract: An optical backplane includes an optical connector which receives juxtaposed optical signals transmitted in nonparallel to the main surface of a circuit substrate from the circuit substrate or transmits juxtaposed optical signals in nonparallel to the main surface of the circuit substrate to the circuit substrate. The optical connector disposes and accommodates edge portions of a plurality of optical fibers and the disposing direction of the optical fibers in the optical connector is in nonparallel to the main surface of the circuit substrate.

Abstract: An optical backplane connector with a board removable (being possible to insert and remove) therein in the direction perpendicular to the backplane plate surface is arranged on a backplane having optical transmission paths. The optical backplane connector accommodates a photoelectric conversion module in such a manner the incident and exit light are perpendicular to the backplane and a transparent board with a photoelectric conversion element mounted thereon is perpendicular to the board and parallel to the backplane. The conduction between the electric contacts of the photoelectric conversion module and the inner electric contacts of the optical backplane connector is held by mechanical contact. At the end portion of the optical transmission path on the backplane, an optical connector having a 45? mirror and guide pins is mounted. The positioning operation is achieved by fitting the guide pins of the optical connector with the guide holes of the photoelectric conversion module.