Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: A method and system for programming a path-following robot to perform an operation along a continuous path while accounting for process equipment characteristics. The method eliminates the use of manual teaching cycles. In one example, a dispensing robot is programmed to apply a consistent bead of material, such as adhesive or sealant, along the continuous path. A computer-generated definition of the path, along with a model of dispensing equipment characteristics, are provided to an optimization routine. The optimization routine iteratively calculates robot tool center point path and velocity, and material flow, until an optimum solution is found. The optimized robot motion and dispensing equipment commands are then provided to an augmented reality (AR) system which allows a user to visualize and adjust the operation while viewing an AR simulation of dispensing system actions and a simulated material bead. Other examples include robotic welding or cutting along a continuous path.

Abstract: A preparation method for a resonant cavity light-emitting diode comprises: forming a first mirror and a first semiconductor layer on a substrate in sequence; forming an active layer on the first semiconductor layer; and forming a second semiconductor layer and a second mirror on the active layer in sequence. The preparation method further comprises: planarizing at least one of a first contact surface between the first semiconductor layer and the first mirror, and a second contact surface between the second semiconductor layer and the second mirror. Since the first contact surface between the first semiconductor layer and the first mirror, and/or the second contact surface between the second semiconductor layer and the second mirror is planarized, the light emission uniformity of the resonant cavity light-emitting diode can be improved.

Abstract: The present application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate on which at least one light guide groove is provided, the light guide groove penetrating the substrate; and a light emitting structure disposed on one side of the substrate, the light emitting structure including at least one set of a first electrode and a second electrode. The light guide groove at least corresponds to one set of a first electrode and a second electrode to prevent bad points. A wavelength conversion dielectric layer is filled into the light guide groove to avoid a coffee ring effect and achieve uniform and full-color light emission of a light emitting device. The semiconductor structure may further save manufacturing costs and prevent crosstalk between light emitted from various light emitting units.

Abstract: The present disclosure provides a semiconductor structure and substrate thereof, and a method for manufacturing the same. In the method for manufacturing the substrate, at least one of groove is provided in each unit sub-region on a surface of a premanufactured substrate, and the premanufactured substrate includes at least one unit region, each of the at least one unit region includes at least two unit sub-regions; in one of the at least one unit region, the at least two unit sub-regions respectively have different porosities, the premanufactured substrate is annealed to form a substrate, wherein openings of the grooves are healed to form self-healing layers, and the grooves that are not fully healed form gaps. When a susceptor transfers heat to the substrate, the unit sub-regions with different porosities respectively have different heat conduction efficiencies.

Abstract: An augmented reality (AR) system for diagnosis, troubleshooting and repair of industrial robots. The disclosed diagnosis guide system communicates with a controller of an industrial robot and collects data from the robot controller, including a trouble code identifying a problem with the robot. The system then identifies an appropriate diagnosis decision tree based on the collected data, and provides an interactive step-by-step troubleshooting guide to a user on an AR-capable mobile device, including augmented reality for depicting actions to be taken during testing and component replacement. The system includes data collector, tree generator and guide generator modules, and builds the decision tree and the diagnosis guide using a stored library of diagnosis trees, decisions and diagnosis steps, along with the associated AR data.

Abstract: Disclosed is an enhancement-mode semiconductor device, comprising: a substrate; a p-type nitride semiconductor layer and an n-type nitride semiconductor layer formed on the substrate in sequence, the p-type nitride semiconductor layer having a first protruding structure at a gate region of the p-type nitride semiconductor layer; the n-type nitride semiconductor layer having a first through hole corresponding to the first protruding structure, exposing the gate region of the p-type nitride semiconductor layer; a channel layer conformally disposed on the n-type semiconductor layer and the first protruding structure; a barrier layer, the barrier layer being conformally disposed on the channel layer. The enhancement-mode semiconductor device has a simple structure, a good repeatability, and avoids impurities and defects brought to the channel layer and the barrier layer.

Abstract: Disclosed is an enhancement-mode semiconductor device, comprising: a substrate; a p-type semiconductor layer, the p-type semiconductor layer being disposed on the substrate; an n-type semiconductor layer, the n-type semiconductor layer being disposed on the p-type semiconductor layer, a groove being formed in a gate region of the n-type semiconductor layer, and the first groove penetrating the n-type semiconductor layer; a channel layer, the channel layer being conformally disposed on the n-type semiconductor layer and in the first groove; and a barrier layer, the barrier layer being conformally disposed on the channel layer. The enhancement-mode semiconductor device has a simple structure, a good repeatability, and avoids bringing impurities and defects to the channel layer and the barrier layer.

Abstract: Embodiments of the present disclosure disclose a method and an apparatus for determining a static state of an obstacle, a device and a storage medium. The method includes the following. Real-time obstacle velocities are obtained by detecting an obstacle via at least two sensors. A belief function assignment value of each sensor is calculated for at least two status parameters respectively according to the real-time obstacle velocity corresponding to each sensor. The belief function assignment value of each sensor is fused for each status parameter with a D-S evidence combination technology to obtain a fused belief function assignment value corresponding to each status parameter. A static state of the obstacle is judged according to the fused belief function assignment value corresponding to each status parameter.

Abstract: A semiconductor structure includes a substrate; a nucleation layer located above the substrate; and a metal nitride thin film located between the nucleation layer and the substrate. A diffusion of atoms in a material of the substrate is suppressed by depositing the metal nitride thin film between the substrate and the nucleation layer, so that a thickness of the nucleation layer is significantly reduced, and a total thermal resistance of the semiconductor structure is reduced.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A hydrogen storage composition, a hydrogen storage container and a method for producing the hydrogen storage container are provided. The hydrogen storage composition includes a thermally-conductive material, a hydrogen storage material, and optionally a granular elastic material. The hydrogen storage container includes a canister body and the hydrogen storage composition. After the hydrogen storage composition is placed into a canister body, a vacuum environment within the canister body is created, and a first weight of the canister body is recorded. Then, hydrogen gas is charged into the canister body, and a second weight of the canister body is recorded. Then, a hydrogen storage amount is calculated according to the first weight and the second weight. If the hydrogen storage amount reaches the predetermined value, the hydrogen storage container is produced.

Abstract: An electronic device including two bodies, at least one hinge assembly, and a hinge cover is provided. The two bodies are pivoted to each other through the hinge assembly. The hinge cover is connected between the two bodies and covers the hinge assembly. The hinge cover includes a plurality of shell parts, and the shell parts are movably connected to each other in sequence. The hinge cover has at least one first heat dissipation opening and at least one heat dissipation flow channel, and the at least one heat dissipation flow channel communicates the first heat dissipation opening and an inner space of at least one of the bodies.

Abstract: The present invention provides an amic acid ester oligomer having a structure of Formula (1) or (1?): wherein G, P, R, Rx, D, E and m are those as defined in the specification. The present invention also provides a polyimide precursor composition or a photosensitive polyimide precursor composition comprising the amic acid ester oligomer, as well as a polyimide prepared from the composition.

Abstract: This application provides a semiconductor structure and substrate thereof, a method of manufacturing the semiconductor structure and substrate thereof. The substrate includes a plurality of unit areas, each of the unit areas includes at least two subunit areas, each of the subunit areas is provided with a groove, the groove is opened from a back side of the substrate; and in one of the unit areas, preset opening ratios of the subunit areas are different. A light-emitting layer is grown on a front side of the substrate; and in one of the unit areas, light-emitting wavelengths of the light-emitting layer in the subunit areas are different.

Abstract: An electronic device and a method for screening a sample are provided. The method includes the following steps. N samples corresponding to a first object are received, in which the N samples include a first sample. N similarity vectors respectively corresponding to the N samples are calculated, in which the N similarity vectors include a first similarity vector corresponding to the first sample. The first similarity vector includes multiple first similarities between the first sample and each of the N samples except the first sample. The first sample is determined to be a representative sample of the first object in response to an average value of the first similarities of the first similarity vector being the maximum value among average values of N similarities respectively corresponding to the N similarity vectors.