Abstract: A folding-type electronic device including a first housing, a second housing, at least one hinge structure, an elastic cover, two bearing plates, a flexible screen, first synchronous gears, and second synchronous gears is provided. The first housing and the second housing are symmetrical to a centerline. The hinge structure is respectively connected to the first housing and the second housing, and the centerline passes through the hinge structure. The elastic cover is slidably disposed between the hinge structure and the first housing and the second housing and has first racks. The bearing plates have second racks. The flexible screen is disposed on the bearing plates. Each first and second synchronous gear is respectively pivoted to the first and second housings. Each first and second synchronous gear is engaged with each corresponding first and second rack.

Abstract: A power positioning method and a power positioning device thereof are disclosed. The method comprises the steps of: controlling a device to be measured to transmit a plurality of positioning signals by a plurality of transmission powers; causing a plurality of known location devices to receive the plurality of positioning signals and recording the plurality of positioning signals and a plurality of corresponding receiving time to a database; finding out the known location device with a large signal intensity among the received plurality of positioning signals; taking out a signal intensity-distance function and a signal intensity-distance standard deviation function from the database; and finding out a device location of the device to be measured according to the signal intensity-distance function and the signal intensity-distance standard deviation function.

Abstract: Disclosed are a semiconductor structure and a preparation method therefor. The semiconductor structure includes: a substrate, a channel layer, a barrier layer, a gate structure, a source, and a drain, where the gate structure includes a p-type semiconductor layer, an n-type semiconductor layer, and a gate. In this way, a control capability of a gate to a channel is improved; a threshold voltage of a semiconductor device is improved, avoiding vertical electric leakage of a gate structure, and reducing side electric leakage of the gate structure; and channel degradation is avoided, improving overall output characteristics of the device.

Abstract: A wafer susceptor includes a plurality of grooves and a convex structure disposed in one groove of the plurality of grooves. The convex structure is asymmetrical, and a convex part of the convex structure is far away from a circle center of a wafer susceptor. The surface temperature of a portion of a substrate far away from the circle center of the wafer susceptor is increased. That is, the temperature of the convex position is basically the same as that of other positions on the substrate, the surface of the entire substrate is heated more uniformly, and thus the wavelength of an epitaxial wafer formed on the substrate is also more uniform, and the quality of the epitaxial wafer is promoted.

Abstract: An over-current protection module for a flyback power supply having a transformer includes: a switch control unit, configured to generate a control signal in a first period to control a transistor switch coupled to a primary side of the transformer, wherein the transistor switch is turned on in a first duty cycle of the control signal and the transistor switch is turned off in a second duty cycle of the control signal; a transformation unit, configured to generate a compensation current according to the second duty cycle; a timing control unit, configured to output the compensation current to an impedance unit to generate an impedance cross voltage in a shut-off period of the transistor switch of the first period; and a current control unit, configured to determine an over-current reference voltage according to the impedance cross voltage for the over-current protection module in a second period following the first period.

Abstract: A portable information handling system supports a flexible OLED display film over housing portions rotationally coupled by a hinge by folding the OLED display film over the hinge. Hinge brackets that couple to the housing portions each have a gear member with a semicircular shape gear inner circumference that engages a gear subassembly of the hinge main body. Hinge bracket rotation translates through the gear subassembly for synchronized housing rotation. The hinge main body has first and second semicircular portions with a smooth surface defined to accept the outer circumference smooth surface of the gear member semicircular shape at first and second rotation axes about which the hinge brackets pivot so that the display film has space to fold in the closed position.

Abstract: A portable information handling system supports a flexible OLED display film over housing portions rotationally coupled by a hinge by folding the OLED display film over the hinge. Hinge brackets that couple to the housing portions each have a gear member with a semicircular shape gear inner circumference that engages a gear subassembly of the hinge main body. Hinge bracket rotation translates through the gear subassembly for synchronized housing rotation. The hinge main body has first and second semicircular portions with a smooth surface defined to accept the outer circumference smooth surface of the gear member semicircular shape at first and second rotation axes about which the hinge brackets pivot so that the display film has space to fold in the closed position.

Abstract: Ultrasonic measurements of fluid properties are performed with the aid of an optical fiber or a package of optical fibers by exciting ultrasound waves at a first location along the optical fiber in the fluid by means of light from the optical fiber and detecting an effect of the ultrasound waves on light reflection or propagation in the optical fiber and/or a further optical fiber in the package at a second location along the optical fiber or at the end of the optical fiber.

Abstract: Embodiments of the present disclosure provide a method and device for detecting a speed of an obstacle, a computer device, and a storage medium. The method includes: calculating at least two real-time speeds corresponding to the obstacle by using a multi-frame difference algorithm according to multi-frame data acquired by a sensor in a preset time window; calculating at least two speed statistic values corresponding to the obstacle according to the at least two real-time speeds; mapping each of the at least two speed statistic values to a corresponding static probability according to a mapping relationship between speed statistic values and static probabilities, to obtain at least two static probabilities; and fusing the at least two static probabilities to obtain a fused static probability of the obstacle, and determining the speed of the obstacle according to the fused static probability.

Abstract: Disclosed are a wafer susceptor and a chemical vapor deposition apparatus, which solve a problem of a decrease in yield due to uneven wavelength of deposited epitaxial material caused by uneven heating during a wafer manufacturing process. The wafer susceptor includes: a wafer carrying groove; and two convex structures disposed at the bottom of the wafer carrying groove.

Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.

Abstract: The present application provides a semiconductor structure and a method for manufacturing the same, which solves a problem that an existing semiconductor structure is difficult to deplete a carrier concentration of a channel under a gate to realize an enhancement mode device. The semiconductor structure includes: a channel layer and a barrier layer superimposed in sequence, wherein a gate region is defined on a surface of the barrier layer; a plurality of trenches formed in the gate region, wherein the plurality of trenches extend into the channel layer; and a P-type semiconductor material filling the plurality of trenches.

Abstract: Translations of an object in a plurality of different spatial directions are measured using a plurality of interferometers to detect interference with light that has been reflected from a diffusively reflective surface, preferably using diffuse reflection from the same planar surface to measure in each of the different spatial directions. At least the interferometers that measure translation in directions that are not perpendicular to the surface each comprises a single mode fiber and a collimator configured to transmit the outgoing light to the object successively through the single mode fiber and the collimator, and to collect reflection into the single mode fiber with the collimator both along a same beam direction. It has been found that, when reflection of a beam with a beam direction at an oblique angle to a diffusively reflective surface is used, the interference resulting from translation of the object is due substantially only to translation in the beam direction.

Abstract: The present invention relates to a method for preparing a patterned polyimide coverlay on a substrate. The method includes: providing a polyimide dry film including a carrier and a non-photosensitive polyimide layer on the carrier, the non-photosensitive polyimide layer containing (i) a polyimide precursor or soluble polyimide and (ii) a solvent; forming a predetermined pattern in the polyimide dry film; laminating the patterned polyimide dry film onto a substrate in such a manner that the non-photosensitive polyimide layer faces the substrate; and forming a patterned polyimide coverlay by heating.

Abstract: A surface roughening method includes the following steps: preparing a first epitaxial layer of a three-dimensional island shape growth over a light emitting structure; and preparing a discontinuous second epitaxial layer over the first epitaxial layer. The surface roughening method provided in the present application is simple and convenient, and improves the efficiency. In addition to the epitaxial growth process, it is not necessary to use an additional process such as wet etching, photonic crystal and other processes to further process the surface of the epitaxial layer, and the method may be implemented by means of one process in a same reaction equipment.

Abstract: A steam turbine and a method for internally cooling the same. The steam turbine includes an outer casing and an inner casing; a rotor having a balancing piston, the rotor being rotatably mounted inside the inner casing; and a steam flow channel formed between the inner casing and the rotor. Moving blades fitted with the rotor and stationary blades fitted with the inner casing are alternately arranged to form multiple stages of blade groups, and an interlayer for steam to circulate is formed between the inner casing and the outer casing. The multiple stages of blade groups include a first set blade staging and a second set blade staging; and the top of the balancing piston is provided with a first chamber and a second chamber.

Abstract: Disclosed are a semiconductor structure and a manufacturing method therefor, solving the problem that it is difficult for an existing semiconductor structure to deplete a carrier concentration of a channel under a gate so as to achieve an enhancement-mode device. The semiconductor structure comprises: a channel layer and a barrier layer stacked in sequence. A gate region is defined on a surface of the barrier layer; a plurality of trenches formed in the gate region. The plurality of trenches are extended into the channel layer; and a stress applying material filled in the plurality of trenches. A lattice constant of the stress applying material is greater than that of the channel layer.

Abstract: Disclosed are an enhancement-mode device and a preparation method therefor. The enhancement-mode device adopts a vertical or semi-vertical structure, and a nitride heterojunction with a non-polar surface or semi-polar face is prepared, such that two-dimensional electron gas is interrupted at the position, and the enhancement-mode device is obtained.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A steam turbine having a steam supplementing structure and an operating method therefor. The steam turbine includes an outer casing and an inner casing, a rotor having a thrust balancing piston, the rotor being rotatably mounted inside the inner casing; and a steam flow channel formed between the inner casing and the rotor. Impeller blades fitted with the rotor and guide blades fitted with the inner casing are alternately arranged to form multiple stages of blade groups. Steam is fed from the steam throughflow downstream of a first designated blade staging in multiple stages of blade groups to a thrust balancing piston chamber disposed between the inner casing and the thrust balancing piston of the rotor. An interlayer for the steam to circulate is formed between the inner casing and the outer casing, the interlayer including a supplemental steam chamber which can receive the steam from a sealed chamber between the rotor and the inner casing.