Abstract: A display device is provided in an embodiment in the disclosure, including a subpixel region, a spacer, a light-emitting element, and a driving circuit. The spacer separates the subpixel region into a first region and a second region. The light-emitting element is located in at least one of the first region or the second region. The driving circuit is electrically connected to the first region and the second region, so as to drive the light-emitting element. A manufacturing method of the display device is also disclosed.

Abstract: A method of manufacturing nitride semiconductor substrate, comprising: providing silicon-on-insulator substrate which comprises an underlying silicon layer, a buried silicon dioxide layer and a top silicon layer; forming a first nitride semiconductor layer on the top silicon layer; forming, in the first nitride semiconductor layer, a plurality of notches which expose the top silicon layer; removing the top silicon layer and forming a plurality of protrusions and a plurality of recesses on an upper surface of the buried silicon dioxide layer, wherein each of the plurality of protrusions is in contact with the first nitride semiconductor layer, and there is a gap between each of the plurality of recesses and the first nitride semiconductor layer; and epitaxially growing a second nitride semiconductor layer on the first nitride semiconductor layer, such that the first nitride semiconductor layer and the second nitride semiconductor layer form a nitride semiconductor substrate.

Abstract: The present invention provides an automatic system for visual guidance and navigation using real-time visual anchor point detection, which includes an edge device, a cloud device, and a landmark database; the system of the present invention provides users with navigation directions via visual landmarks. A candidate visual landmark image is selected from the database; the system of the present invention can calculate the time of day, the current weather condition, the current season, etc. In addition, the system of the present invention can use the camera on the dashboard of the vehicle, the camera in the smartphone, or other cameras to collect real-time images; the system of the present invention can also provide feedback on the visibility or salience of landmarks to improve the visual landmark images obtained by subsequent users.

Abstract: A fleet vehicle management system includes an edge device disposed in a vehicle and a cloud device. A processing module of the edge device acquires around-view image and determines at least one traffic indication accordingly. The nearing event warning module of the edge device sends out a nearing event alert to a driver via an output module. The after event detection module of the edge device acquires GPS informations in a first time interval and a second time interval respectively to determine whether the vehicle meets an after event criterion. A violation event is triggered if the after event criterion is met. A database of the cloud device stores the nearing event alert, a driving violation result and a driving record information. The driver behavior analysis module generates an information for evaluating a driving score based on the nearing event, the violation event and the driving record information.

Abstract: The present application provides a synchronous rectification circuit, which adopts a multiplexer that selectively inputs a first reference signal or a second reference signal to a comparator by coupling the first and second reference signal. A comparing signal is generated to a switch element by comparing a switch input signal. Hereby, the switch element is under control for synchronous rectification.

Abstract: Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a light extraction structure on the n-type semiconductor layer; and sequentially forming an active layer and a p-type semiconductor layer on the n-type semiconductor layer and the light extraction structure. In this way, step of peeling off the substrate may be avoided. In addition, with a plurality of discrete light emitting structures formed on the same substrate, a step of cutting a device is avoided, and damage to the device can be prevented.

Abstract: A method for generating a three-dimensional image includes capturing a set of color images of an object, generating a first point cloud according to at least the set of color images, generating a second point cloud by performing a filtering operation to the first point cloud according to the set of color images, selectively performing a pairing operation using the second point cloud and a target point cloud to generate pose information, and combining the first point cloud and the target point cloud according to the pose information to update the target point cloud to generate the three-dimensional image of the object. The set of color images is related to color information of the object. The relativity of the second point cloud and the rigid surface is higher than the relativity of the second point cloud and the non-rigid surface.

Abstract: Provided are a bearing system and a power control method for a bearing device. The bearing system comprises a susceptor; a rotating shaft fixed under the susceptor, where the rotating shaft and the susceptor rotate synchronously; a heating wire located under the susceptor, where the heating wire comprises n heating wire units arranged in a circumferential direction of the susceptor, n?2, and temperature of each of the heating wire units is independently controlled; and a power controller configured to: during rotation of the susceptor, control at least one of: a power of a heating wire unit directly under a down end of the susceptor to be less than a power of each of other heating wire units, or a power of a heating wire unit directly under an up end of the susceptor to be greater than a power of each of other heating wire units.

Abstract: Disclosed are a light emitting diode with a vertical structure and a manufacturing method thereof. The manufacturing method includes: forming a metal atom layer on a substrate, the substrate being an n-type substrate; forming an n-type buffer layer on the metal atom layer; forming a light emitting structure on the n-type buffer layer, the light emitting structure including an n-type semiconductor layer, an active layer and a p-type semiconductor layer from bottom to top; disposing a p electrode on the light emitting structure; and disposing an n electrode on one side, away from the metal atom layer, of the substrate. The n-type substrate with conductivity is adopted, and the metal atom layer and the n-type buffer layer are sequentially formed on the n-type substrate, so that conductivity of a device with the vertical structure can be ensured, and stripping and bonding are not needed.

Abstract: Disclosed are a semiconductor structure and a method for preparing the same, relating to the field of semiconductor technologies. The semiconductor structure includes: a substrate; and a plurality of functional film layers stacked on the substrate, the plurality of functional film layers include a first semiconductor layer and a second semiconductor layer stacked with each other, the first semiconductor layer is arranged between the substrate and the second semiconductor layer. The first semiconductor layer includes a plurality of defect pits recessed toward the substrate, the defect pits are filled by the second semiconductor layer, and one side of the second semiconductor layer away from the first semiconductor layer is a plane. The semiconductor structure and the preparation method thereof provided in the present application solve the problem of vertical leakage in the semiconductor structure in the prior art.

Abstract: Disclosed are a diode and a manufacturing method thereof. The diode includes: a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1×1018 cm?3; a metal atomic layer located on a first surface of the first substrate; an epitaxial structure located on the metal atomic layer; a first electrode located on the epitaxial structure; and a second electrode located on a second surface, opposite to the first surface, of the first substrate. The diode significantly reduces forward conduction voltage drop.

Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.

Abstract: Disclosed is a method of manufacturing a semiconductor structure, including: providing a silicon substrate (10), epitaxially growing a functional layer (11) on an upper surface of the silicon substrate, where a material of the functional layer includes a group-III-nitride-based material; implanting ions into an interface between the upper surface of silicon substrate and the functional layer to introduce defects to the interface; or implanting, before epitaxially growing the functional layer, ions to the upper surface of the silicon substrate to introduce defects to the interface.

Abstract: Provided are a semiconductor structure and manufacturing method thereof, the semiconductor comprising: a base (10), wherein the base (10) comprises strip trenches (101) arranged parallelly; and a heterojunction structure (11) located on bottom walls and sidewalls of the strip trenches and on the base other than the strip trenches, wherein regions of the heterojunction structure located on the bottom walls and on the base other than the strip trenches are polarized regions, regions of the heterojunction structure on the sidewalls are non-polarized regions, and the polarized regions contain carriers; the heterojunction structure comprises a source region (11a) and a drain region (11b) respectively located at both ends of each of the strip trenches, and a gate region (11c) between the source region and the drain region; and the carriers between the source region and the drain region are confined to flow in each of the polarized regions.

Abstract: The present application provides method and circuit for monitoring a power supply, which firstly obtains an auxiliary side voltage from a switching power supply and then adopts a divided voltage circuit to obtain a divided voltage from the auxiliary side voltage, for detecting the divided voltage and a detected current flowed in the detection circuit with adopting a first detection circuit and a second detection circuit in an switch circuit to correspondingly generate a first and a second detection signals, which is corresponding to an ambient temperature and an output voltage of the power supply. Hereby, the power supply is monitored.

Abstract: The present application provides method and circuit for monitoring a voltage of a power supply, which adopts a divided voltage circuit to obtain a divided voltage from an input voltage of an input power source generated from the power supply, for detecting the input voltage according to the divided voltage by adopting a first detection circuit and a second detection circuit. Also, judging whether the divided voltage is clamped according to a clamp threshold value to determine the first detection circuit or the second detection circuit detecting a detection current and determine another detection circuit detecting the divided voltage. Hereby, the input voltage transmitted from a rectification circuit to the power supply is monitored, and the dependence between the two detection circuits is avoided.

Abstract: A method for manufacturing a light emitting device is provided. The method for manufacturing the light emitting device includes: providing a substrate with light emitting units disposed thereon; attaching the light emitting units to a carrier; removing the substrate; and transferring a portion of the light emitting units from the carrier to a driving substrate.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method therefor. In the method, for the substrate, the first conductive type semiconductor layer, the light emitting layer and the second conductive type semiconductor layer distributed sequentially from bottom to top, the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in first predetermined regions are removed to form grooves. The second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in second predetermined regions and third predetermined regions are retained. Layers retained in second predetermined regions form light emitting units arranged in an array. Various layers retained in third predetermined regions form connection posts, each of which connects adjacent light emitting units.

Abstract: An N-face polar GaN-based device, a composite substrate thereof, and a method of manufacturing the composite substrate are provided in the present disclosure. The N-face polar GaN-based composite substrate includes: a semiconductor substrate, an insulating layer on the semiconductor substrate and a GaN-based material layer on upper surface of the insulating layer; a surface of the GaN-based material layer attached to the insulating layer is Ga-face, and a surface of the GaN-based material layer away from the insulating layer is an N-face. In the present disclosure, the transfer technology is adopted to replace the direct epitaxial growth, which overcomes the difficult growth process, and the N-face polar GaN-based composite substrate with better quality can be obtained.

Abstract: The present application provides a method of manufacturing a semiconductor structure. The manufacturing method includes following steps: at step S1: forming a first epitaxial structure above a substrate, where the first epitaxial structure is doped with a doping element; at step S2: forming a sacrificial layer above the first epitaxial structure; at step S3: etching the sacrificial layer; at step S4: growing an insertion layer above the first epitaxial structure when the etching of the sacrificial layer is completed; and at step S5: growing a second epitaxial structure above the insertion layer; before proceeding to step S4, repeating step S2 and step S3, until a concentration of the doping element in the first epitaxial structure is lower than a predetermined threshold.