Abstract: A backlight control method for a surface light-emitting device is provided. The backlight control method includes generating a plurality of driving currents to drive the surface light-emitting device such that a plurality of backlight zones generate a plurality of brightness values, measuring the plurality of brightness values of the plurality of backlight zones, calculating a plurality of uniformities of the plurality of backlight zones according to the plurality of brightness values and setting a plurality of target uniformities, generating a plurality of adjustment values according to the plurality of uniformities, the plurality of target uniformities and a plurality of adjustment coefficients corresponding to the plurality of backlight zones, and generating a plurality of adjusted driving currents to drive the plurality of backlight zones according to the plurality of adjustment values and the plurality of driving currents.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an electrical interconnect structure, a thermal interconnect structure, and a thermal passivation layer over a substrate. The electrical interconnect structure includes interconnect vias and interconnect wires embedded within interconnect dielectric layers. The thermal interconnect structure is arranged beside the electrical interconnect structure and includes thermal vias, thermal wires, and/or thermal layers. Further, the thermal interconnect structure is embedded within the interconnect dielectric layers. The thermal passivation layer is arranged over a topmost one of the interconnect dielectric layers. The thermal interconnect structure has a higher thermal conductivity than the interconnect dielectric layers.

Abstract: A control circuit is configured to control a flyback circuit comprising a primary-side switch, a secondary-side rectifier and a transformer. The control circuit comprises a feedback control circuit configured to generate a secondary-side control signal based on a current ripple signal of the transformer, and at least one of a direct-current component of an output voltage signal and a direct-current component of an output current signal of a secondary side of the flyback circuit, wherein the secondary-side control signal is configured to control a turn-off of the secondary-side rectifier, an isolated transmission circuit coupled to the feedback control circuit and configured to generate a first primary-side control signal based on the secondary-side control signal, and a primary control circuit coupled to the isolated transmission circuit and configured to control a turn-on of the primary-side switch in response to receiving the first primary-side control signal.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an electrical interconnect structure, a thermal interconnect structure, and a thermal passivation layer over a substrate. The electrical interconnect structure includes interconnect vias and interconnect wires embedded within interconnect dielectric layers. The thermal interconnect structure is arranged beside the electrical interconnect structure and includes thermal vias, thermal wires, and/or thermal layers. Further, the thermal interconnect structure is embedded within the interconnect dielectric layers. The thermal passivation layer is arranged over a topmost one of the interconnect dielectric layers. The thermal interconnect structure has a higher thermal conductivity than the interconnect dielectric layers.

Abstract: A method and system device for performing multi-carrying of a linear motor for magnetic levitation transportation is provided. With the method for performing multi-carrying of a linear motor for magnetic levitation transportation, linear motor traction power information and other linear motor carried information are generated, and the other linear motor carried information is transmitted through a channel for carrying the linear motor traction power information that is constructed based on a linear motor structure.

Abstract: A synchronous rectifier control apparatus includes a continuous conduction mode detection circuit configured to receive a voltage across a synchronous rectifier switch and determine whether the synchronous rectifier switch operates in a continuous conduction mode based on a rising slope of the voltage across the synchronous rectifier switch, a turn-off timer control circuit configured to measure a conduction time of the synchronous rectifier switch and turn off the synchronous rectifier switch after the conduction time of the synchronous rectifier switch in a current cycle is substantially equal to the conduction time measured in an immediately previous cycle, and a drive voltage control circuit configured to reduce a gate drive voltage of the synchronous rectifier switch after the conduction time of the synchronous rectifier switch in the current cycle is substantially equal to the conduction time measured in the immediately previous cycle multiplied by a predetermined percentage.

Abstract: A backlight control method for a surface light-emitting device is provided. The backlight control method includes generating a plurality of driving currents to drive the surface light-emitting device such that a plurality of backlight zones generate a plurality of brightness values, measuring the plurality of brightness values of the plurality of backlight zones, calculating a plurality of uniformities of the plurality of backlight zones according to the plurality of brightness values and setting a plurality of target uniformities, generating a plurality of adjustment values according to the plurality of uniformities, the plurality of target uniformities and a plurality of adjustment coefficients corresponding to the plurality of backlight zones, and generating a plurality of adjusted driving currents to drive the plurality of backlight zones according to the plurality of adjustment values and the plurality of driving currents.

Abstract: A method for manufacturing a semiconductor device having a low-k carbon-containing dielectric layer includes: depositing a low-k carbon-containing dielectric material, which has a carbon content ranging from 16 atomic % to 23 atomic %, using a precursor mixture to form a carbon-containing dielectric layer having a k value ranging from 2.8 to 3.3 and a porosity ranging from 0.03% to 1.0%; forming the carbon-containing dielectric layer into a patterned carbon-containing dielectric layer having a recess therein by etching, the patterned carbon-containing dielectric layer having a porosity ranging from 1.0% to 2.0%; and filling the recess with an electrically conductive material to form an electrically conductive feature in the patterned carbon-containing dielectric layer.

Abstract: An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.

Abstract: A snap fit eyeglasses frame includes a left eyeglass frame portion and a right eyeglass frame portion which can be separated. There is a male connector portion of the left side eyeglasses frame portion, and there is a female connector portion of the right side eyeglasses frame portion 20, whereby the male and female connector portions are assembled together when securing the left and right frame portions together. There is an aperture in the female connector portion to receive a locking member, which also will serve as the release member. The male connector portion has the release member which is deformed or bent out of the way during assembly, and which after assembly is urged toward a position where it extends through the aperture in the female connector portion The release member provided on the male connector portion.