Abstract: A memory management and writing method for managing a memory module is provided. The memory module has a plurality of memory units and a plurality of data input/output buses corresponding to the memory units. The method includes configuring a plurality of logical units, dividing each of the logical units as a plurality of logical parts, and mapping the logical parts of each of the logical units to physical blocks of the memory units. The method also includes respectively establishing mapping tables corresponding to the data input/output buses, and only using one of the data input/output buses to write data from a host system into the corresponding memory unit according to the mapping table corresponding to the data input/output bus. Accordingly, the method can effectively increase the speed of writing data into the memory module.

Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.

Abstract: A memory management and writing method for managing a plurality of physical units of a memory chip is provided. The present method includes grouping the physical units into a first physical unit group and a second physical unit group, recording and calculating a first erase count of the first physical unit group and a second erase count of the second physical unit group, and calculating an erase count difference between the first erase count and the second erase count. The present method also includes determining whether the erase count difference is larger than an erase count difference threshold when a write command is received. The method further includes executing a switched writing procedure to write data corresponding to the write command into the memory chip when the erase count difference is larger than the erase count difference threshold. Thereby, the lifespan of the memory chip is effectively prolonged.

Abstract: A non-volatile memory storage system including a transmission interface, a memory module, and a controller is provided. The memory module includes first and second non-volatile memory chips. The first and the second non-volatile memory chips can be simultaneously enabled by receiving a chip enable signal from the controller via a chip enable pin. When the controller performs a multichannel access, the controller provides an access instruction to the first and second non-volatile memory chip, after enabling the first non-volatile memory chip and the second non-volatile memory chip with the chip enable signal. When the controller performs a single channel access, the controller provides the access signal to one of the first and second non-volatile memory chips, and provides a non-access instruction to the other one, after enabling the first non-volatile memory chip and the second non-volatile memory chip with the chip enable signal.

Abstract: A block management method for managing a plurality of physical blocks is provided. The method includes grouping the physical blocks into a plurality of physical units, grouping a portion of the physical units into a data area and a spare area, configuring a plurality of logical units, and grouping the logical units into a plurality of logical unit groups and configuring another portion of the physical units as a plurality of global random physical units corresponding to the logical unit groups, wherein each of the global random physical units corresponds to one of the logical unit groups. The method further includes getting the physical units from the spare area as global random substitute physical units of the global random physical units. Accordingly, the method can store data in the global random physical units or the global random substitute physical units, thereby reducing the time for executing a host write command.

Abstract: A data writing method for a flash memory, and a flash memory controller and a flash memory storage apparatus using the same are provided. First, data is received from a host system. Next, the data is divided into at least one frame. Afterwards, an error checking and correcting (ECC) code corresponding to the frame is generated so as to form at least one ECC frame. Then, the ECC frame is divided into a plurality of frame segments. Finally, the frame segments are written into a flash memory chip according to a non-sequentially ranking order.

Abstract: A flash memory management method for managing a plurality of physical units of a flash memory chip is provided. The flash memory management method includes grouping a portion of the physical units into a data area and a spare area; configuring a plurality of logical units and setting mapping relationships between the logical units and the physical units of the data area. The flash memory management method further includes receiving data and writing the data into the physical unit mapped to a second logical unit among the logical units, and the data belongs to a first logical unit among logical units. Accordingly, the flash memory management method can effectively reduce the number of times for organizing valid data, thereby reducing the time for executing a host write-in command.

Abstract: A flash storage device and a testing method and a testing system for the flash storage device are provided. The testing system includes a testing apparatus and the flash storage device. The flash storage device includes a controller, a flash memory module, a plurality of peripheral pins and at least one test pin. The flash storage device receives an enable signal transmitted from the testing apparatus through the test pin. Subsequently, the controller outputs a signal to the testing apparatus through each peripheral pin based to the enable signal. Finally, the testing apparatus verifies the signal outputted by each peripheral pin.

Abstract: A data storage method for storing data into a flash memory chip is provided. The flash memory chip has a plurality of physical addresses, and these physical addresses include a plurality of fast physical addresses and a plurality of slow physical addresses. In the data storage method, the usage rate of the physical addresses is monitored. When the usage rate is not larger than a usage rate threshold value, only the fast physical addresses are used for storing the data into the flash memory chip. When the usage rate is larger than the usage rate threshold value, the fast physical addresses and the slow physical addresses are used for storing the data into the flash memory chip. Thereby, the speed of storing data into the flash memory chip is effectively increased.

Abstract: A flash memory storage system including a flash memory chip, a connector, and a flash memory controller is provided. The flash memory controller configures a plurality of logical addresses and maps the logical addresses to a part of the physical addresses in the flash memory chip, and a host system uses a file system to access the logical addresses. Besides, the flash memory controller identifies a deleted logical address among the logical addresses and marks data in the physical address mapped to the deleted logical address as invalid data. Thereby, the flash memory storage system can identify data deleted by the host system in the physical addresses, so that the time for sorting data can be effectively reduced.

Abstract: A data writing method for writing data from a host system into a flash memory chip is provided. The method includes configuring a plurality of logical page addresses, grouping the logical page addresses into a plurality of logical blocks, and recording the data dispersion degree of each of the logical blocks. The method also includes receiving write-in data from the host system, identifying a logical block that a logical page address to be written by the host system belongs to, and writing the write-in data into the flash memory chip according to the data dispersion degree of the logical block, wherein the data dispersion degree of each of the logical blocks is not larger than a logical block data dispersion degree threshold value. Accordingly, the method can effectively reduce the time for executing a host write command.

Abstract: A block management method for managing a plurality of physical blocks of a flash memory chip is provided. The block management method includes configuring a plurality of logical addresses; mapping the logical addresses to a plurality of logical blocks; and mapping the logical blocks to the physical blocks. Additionally, the block management method also includes obtaining deleting records related to a plurality of deleted logical addresses from a host system, wherein data stored in the deleted logical addresses is recognized as invalid by the host system. And, the block management method further includes obtaining a deleted logical block, marking each of the logical addresses mapped to the deleted logical block as a bad logical address, and linking the physical block mapped to the deleted logical block to a spare area. Accordingly, the block management method can effectively prolong the lifespan of a flash memory chip.

Abstract: A data read method for reading data to be accessed by a host system from a plurality of flash memory modules is provided. The data read method includes receiving command queuing information related to a plurality of host read commands from the host system, each of the host read commands is corresponding to one of a plurality of data input/output buses coupled to the flash memory modules. The data read method also includes re-arranging the host read commands and generating a command giving sequence according to the data input/output buses corresponding to the host read commands. The data read method further includes sequentially receiving and processing the host read commands from the host system according to the command giving sequence and pre-reading data corresponding to a second host read command. Thereby, the time for executing the host read commands can be effectively shortened.

Abstract: A method for giving program commands to a flash memory chip is provided, the method is suitable for writing data from a host system into the flash memory chip. In the present method, a plurality of host write commands and data corresponding to the host write commands are received from the host system by using a native command queuing (NCQ) protocol, and cache program commands are gived to the flash memory chip to write the data into the flash memory chip. Accordingly, the time for executing the host write commands is effectively shortened by writing the data through the cache program commands and the NCQ protocol.

Abstract: A method for giving a read command to a flash memory chip to read data to be accessed by a host system is provided. The method includes receiving a host read command; determining whether the received host read command follows a last host read command; if yes, giving a cache read command to read data from the flash memory chip; and if no, giving a general read command and the cache read command to read data from the flash memory chip. Accordingly, the method can effectively reduce time needed for executing the host read commands by using the cache read command to combine the host read commands which access continuous physical addresses and pre-read data stored in a next physical address.

Abstract: A data writing method for moving data in a plurality of flash memory modules during a write command of a host system is executed is provided, wherein each of the flash memory modules has a plurality of physical blocks. The present data writing method includes transferring first data received from the host system to one of the flash memory modules and writing the first data into the physical blocks of the flash memory module according to the write command. The present data writing method also includes moving at least one second data in the physical blocks of another one of the flash memory modules during the first data is written. Thereby, when the host system is about to write data into the other flash memory module, the time for executing the write command is effectively reduced.

Abstract: A flash memory storage apparatus including a multi level cell (MLC) NAND flash memory, a flash memory controller, and a host transmission bus is provided. The MLC NAND flash memory includes a plurality of blocks for storing data, wherein each of the blocks has an upper page and a lower page, and the writing speed of the lower page is faster than that of the upper page. The flash memory controller is electrically connected to the MLC NAND flash memory and is used for executing storage mode switching steps. The host transmission bus is electrically connected to the flash memory controller and is used for communicating with a host. The flash memory storage apparatus provided by the present invention can provide multiple storage modes in order to store different data.

Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.

Abstract: A logical block management method for managing a plurality of logical blocks of a flash memory device is provided. The logical block management method includes providing a flash memory controller, grouping the logical blocks into a plurality of logical zones, wherein each logical block maps to one of the logical zones. The logical block management method also includes counting a use count value for each logical block, and dynamically adjusting mapping relations between the logical blocks and the logical zones according to the use count values. Accordingly, the logical block management method can effectively utilizing the logical zones to determine usage patterns of the logical blocks and use different mechanisms to write data, so as to increase the performance of the flash memory storage device.

Abstract: A flash memory storage apparatus including a multi level cell (MLC) NAND flash memory, a flash memory controller, and a host transmission bus is provided. The MLC NAND flash memory includes a plurality of blocks for storing data, wherein each of the blocks has an upper page and a lower page, and the writing speed of the lower page is faster than that of the upper page. The flash memory controller is electrically connected to the MLC NAND flash memory and is used for executing storage mode switching steps. The host transmission bus is electrically connected to the flash memory controller and is used for communicating with a host. The flash memory storage apparatus provided by the present invention can provide multiple storage modes in order to store different data.