Abstract: The present invention includes: a front-side positive trace (2P) disposed on a flexible substrate (5); a positive external connection line (12P) connected to the front-side positive trace (2P) to supply electric power; and LED chips (4) provided to the flexible substrate (5) and connected to the front-side positive trace (2P), wherein an electric resistance between the positive external connection line (12P) and one of the LED chips (4) which is farthest from the positive external connection line (12P) is less than an internal resistance of the one of the LED chips (4).

Abstract: An optical treatment apparatus includes: a power source unit; a light irradiation module, that irradiates an affected part with light; a spacer that is positioned between the light irradiation module and the affected part; a fixing material that applies pressure to the light irradiation module and fixes the light irradiation module at an installation position; and a shielding material that covers the light irradiation module, in which, in a case where the pressure applied by the fixing material becomes lower than predetermined pressure, supply of current is stopped.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: A burden on a patient in light irradiation therapy is reduced, and treatment that is safe and takes reduced effort is enabled. A hook surface fastener that holds a cooling material of a light irradiating module so that the cooling material is in contact with the light irradiating module is provided on a rear surface of a band and a device pocket that holds a device performing at least one of power supply to and control of the light irradiating module is provided on a front surface of the band so as not to overlap with the hook surface fastener.

Abstract: An object is to uniformly irradiate a non-flat affected area with light. Provided is an irradiation apparatus (1) configured to irradiate a projecting part of a body of an irradiation target organism with light, the irradiation apparatus including: a cover (2); a light source unit (3); and a sheet (4) that is provided so that the light source unit (3) does not make contact with an affected area of the projecting part or an area surrounding the affected area, the sheet (4) and/or the cover (2) being configured to make contact with the area surrounding the affected area.

Abstract: An image display element includes micro light emitting elements arranged in an array, a drive circuit substrate that includes a drive circuit for supplying a current to the micro light emitting elements to cause light to be emitted, and an antenna arranged on a light emitting surface of each of the micro light emitting elements, in which the antenna includes isolated convex portions.

Abstract: To enable manufacturing of a display device with a low defect rate and high yield, an integrated circuit chip includes a drive circuit that drives a light emitting unit, and the drive circuit includes a P-side electrode connected to an anode of the light emitting unit and a nonvolatile memory transistor that controls current supply to the P-side electrode.

Abstract: A micro light emitting element includes: a body including a compound semiconductor layer in which a first conductive layer, a light emission layer, and a second conductive layer with a conductive type opposite to a conductive type of the first conductive layer are stacked in order from a light emitting surface side; a first electrode including a transparent electrode on the light emitting surface side; a second electrode including a metal film on a side opposite to the light emitting surface side; and a first reflective material covering a side surface of the body. The light emission layer is disposed on the light emitting surface side of the body. The side surface of the body is tapered at an inclination angle to open in a light emitting direction.

Abstract: An image display device includes: a plurality of micro light emitting elements arranged in an array shape; a driving circuit substrate including a driving circuit that supplies electric current to the plurality of micro light emitting elements and that causes the plurality of micro light emitting elements to emit light; a plurality of micro lenses in contact with light emitting surfaces of the plurality of micro light emitting elements; and a plurality of partition walls disposed around the plurality of micro lenses in a direction parallel to the light emitting surfaces.

Abstract: An object is to realize a low-cost three-dimensional image sensor capable of providing a wide measurement range. The three-dimensional image sensor includes a light receiving unit including a plurality of pixels each including an SPAD (single-photon avalanche photodiode) configured to detect, in Geiger mode, a photon of incident light including reflected light from an object to be detected, a plurality of pixel storage elements provided for the respective pixels in a one-to-one manner, each pixel storage unit being configured to count a accumulated value of pulse signals output from a corresponding one of the pixels as a result of detecting photons for each of temporally successive time intervals, and a signal processing circuit (DS) configured to calculate distance information regarding a distance between a light receiving unit and an object for each pixel by using groups of accumulated values accumulated by the pixel storage elements.

Abstract: A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

Abstract: Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: In an image display element, a side surface of a nitride semiconductor is covered with a reflection material inclined so as to open in a light emitting direction, wavelength conversion units are surrounded by partition walls, and side surfaces of the partition walls facing the wavelength conversion units are reflection surfaces inclined so as to open in the light emitting direction.

Abstract: An image display device includes a plurality of micro light-emission elements that constitute a pixel and that are provided on a driving circuit substrate. The micro light-emission element displays an image by emitting light to a side opposite to the driving circuit substrate. A light convergence portion that converges light is disposed in the pixel.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: An image display device includes: a plurality of LED elements that are mounted on a drive circuit substrate and emit light source light; a wavelength conversion layer that is stacked on a side of the LED elements opposite to the drive circuit substrate, converts the light source light emitted by the LED elements into long wavelength light, and emits the long wavelength light to a side opposite to the drive circuit substrate; and a first functional layer that is disposed on a light emitting surface side of the long wavelength light of the wavelength conversion layer, reflects the light source light, and transmits the long wavelength light.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

Abstract: Provided is an image display device including a micro light emission element that is connected onto a drive circuit substrate incorporating a drive circuit of the micro light emission element. The micro light emission elements has a light emission surface on an opposite side to a bonding surface with the drive circuit, at least one of a surface on a connecting surface side of the micro light emission element and a surface on a connecting surface side of the drive circuit substrate has a protrusion portion and a recess portion, an electrode of the micro light emission element and an electrode of the drive circuit substrate side are connected to each other via a metal nanoparticle, and a space formed between the surface on the connecting surface side of the micro light emission element and a side of the surface on the connecting surface of the drive circuit substrate is filled with a photo-curing resin.