Abstract: Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.

Abstract: The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed.

Abstract: Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]otane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

Abstract: A chemically amplified photo-resist contains a photoacid generator for changing the solubility of resin after exposure to 130-220 nanometer wavelength light, and the photoacid generator contains two kinds of sulfonium salt compound expressed by general formulae [1] and [2] so that the chemically amplified photo-resist is improved in resolution, sensitivity and smoothness on side surfaces of a transferred pattern.

Abstract: Photoacid generators comprising sulfonium salt compounds represented by the following general formula (2) wherein R1 and R2 represent each an alkyl group optionally having oxo, or R1 and R2 may be cyclized together to form an alkylene group optionally having oxo; R3, R4 and R5 represent each hydrogen or a linear, branched, monocyclic, polycyclic or crosslinked cyclic alkyl group; and Y− represents a counter ion.

Abstract: The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser. The photo acid generator contains a sulfonium salt compound represented by the following general formula (1): wherein R1 represents an alkylene group, or an alkylene group having an oxo group, R2 represents a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group having an oxo group, or a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group, provided that either of R1 and R2 has an oxo group, and Y− represents a counter ion.

Abstract: Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo [3.2.

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.

Abstract: A sulfonium salt compound designated by a general formula (I), a photoresist composition containing the sulfonium salt compound and a method for patterning by employing the sulfonium salt compound.

Abstract: A fluorine-containing phenylmaleimide derivative having a specific structure. A polymer obtained by polymerizing monomers containing the derivative. A polymer containing a specific structural unit and having a weight-average molecular weight of 2,000 to 200,000. A chemically amplified resist composition containing the polymer and a photo acid generator, wherein the proportion of the polymer relative to the total of the polymer and the photo acid generator is 70 to 99.8% by mass. A method for pattern formation, which comprises coating the above composition on a to-be-processed substrate, exposing with a light of 180 nm or less wavelength, and conducting baking and development.

Abstract: A bookbinding device is disclosed to adhesively bind a back surface of a stack of pages to a center portion of a cover page, which includes a page supply unit (1), a thickness sensor (2), an adhesive applicator (3), a page conveyor unit (4), a cover supply unit (5), a press unit (8) and a cover folding unit (9). The cover supply unit includes a trimmer (6) for trimming a side edge portion of the cover sheet depending upon thickness of the page stack detected by the thickness sensor, and a positioning unit (7) for positioning the cover sheet such that a center line of the cover sheet which has been trimmed by the trimmer is aligned with a center of thickness of the page stack, at which position the page stack is adhesively bound to the cover sheet.

Abstract: A chemically amplified photo-resist contains a photoacid generator for changing the solubility of resin after exposure to 130-220 nanometer wavelength light, and the photoacid generator contains two kinds of sulfonium salt compound expressed by general formulae [1] and [2] 1

Abstract: It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source. The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained.

Abstract: Disclosed is a negative photoresist which is suitable for use in photolithography using light of 220 nm or shorter like the light from the ArF excimer laser as exposure light, avoids pattern deformation originated from swelling and has a high adhesion strength to the substrate (a micro pattern is hard to be separated from the substrate) in addition to a dry etching resistance and high resolution.

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: 1

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.

Abstract: The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser.

Abstract: A form-improvement agent, for resist pattern, including a steroid compound is included in a positive chemically amplified resist. The form-improvement agent is in a range from 0.5 to 8 parts by weight per 100 parts by weight of a resin for resist included in the positive chemically amplified resist. The steroid compound is, for example, a cholic acid ester.

Abstract: A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0<x≦0.7, 0<y<1, 0<z<1, and the polymer has a weight averaged molecular weight of 1,000 to 500,000, and (b) a photo acid generator, the weight ratio between (a) and (b) being 75 to 99.8 weight parts of (a) to 0.2 to 25 weight parts of (b). This composition may include a multi-functional epoxy compound. This composition is deposited on a substrate to be worked, and after heating, the composition is exposed to an activating irradiation, and then, a heat treatment is carried out, and further, the composition is developed so as to form a pattern.

Abstract: Disclosed is a negative photoresist which is suitable for use in photolithography using light of 220 nm or shorter like the light from the ArF excimer laser as exposure light, avoids pattern deformation originated from swelling and has a high adhesion strength to the substrate (a micro pattern is hard to be separated from the substrate) in addition to a dry etching resistance and high resolution.