Abstract: The present invention includes: preparing a sample containing a peptide to be analyzed; adding a labeling compound which specifically reacts with a thiol group to the sample, and labeling a reduced cysteine residue contained in the peptide in the sample with the labeling compound; separating a sample containing the peptide labeled with the labeling compound by a chromatograph; executing product ion scan measurement with a peptide ion, as a precursor ion, generated by ionizing the peptide labeled with the labeling compound under a condition that a thiol group is not desorbed from a cysteine residue; and determining whether or not the peptide to be analyzed contains a reduced cysteine residue by determining whether or not a peak appearing at a specific mass-to-charge ratio corresponding to a structure of the labeling compound is present in a mass spectrum created based on data obtained by the measurement execution.

Abstract: A semiconductor device manufacturing method includes transferring a substrate including a structure that has a first surface at which indium is exposed, and a second surface at which a metal is exposed, to a chamber of a film forming device, supplying an indium reducing gas to the chamber at a first temperature at which indium is able to transition to a gaseous state, and supplying a film forming gas to the chamber at a second temperature higher than the first temperature to form a first film on the first surface and the second surface, after supplying the reducing gas.

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a first insulating layer facing the first region; a second insulating layer facing the second region; and a gate insulating layer between the gate electrode and the oxide semiconductor layer, containing oxygen (O) and at least one metal element selected from a group consisting of Al, Hf, Zr, La, Y, Zn, In, Sn, and Ga, and having a chemical composition different from that of the oxide semiconductor layer.

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: In one embodiment, a film forming apparatus includes a chamber configured to load a substrate, a stage configured to support the substrate, and a gas supplier configured to supply a gas into the chamber to form a film on the substrate. The device further includes a first detector configured to detect a first value that varies depending on at least pressure of a first portion above the stage in the chamber, and a controller configured to control a process of forming the film on the substrate based on the first value.

Abstract: A policy control device includes an acquisition unit configured to acquire an amount of communication of an accommodated user terminal from a relay device that notifies the amount of communication when the amount of communication exceeds a communication amount threshold value, a calculation unit configured to calculate a communication speed by using an amount of communication in a past fixed period of time including at least the amount of communication currently acquired by the acquisition unit, and calculate the communication amount threshold value based on the calculated communication speed, and a notification unit configured to notify the relay device of the communication amount threshold value calculated by the calculation unit.

Abstract: A resource conflict arbitration apparatus that arbitrates a conflict between resources includes: reception means configured to receive a request for resource allocation to a device among one or more devices; determination means configured to determine, when a resource requested by the resource allocation request is to be allocated to the device, whether a summed value of resources allocated to the one or more devices exceeds an upper limit value of available resources; and calculation means configured to determine, when it is determined by the determination means that the summed value exceeds the upper limit value, a status of resource allocation to each device to maximize a sum of priorities of resource allocation to the one or more devices under a constraint condition that a summed value of resources allocated to the devices does not exceed the upper limit value.

Abstract: A chlorinated polyvinyl chloride-based resin that is excellent in processability, thermal stability, and physical properties is provided. A method for producing the chlorinated polyvinyl chloride-based resin includes a chlorination step of supplying chlorine to slurry containing a polyvinyl chloride-based resin and powder of a polypropylene-based resin that has a viscosity average molecular weight of not less than 3,500, and irradiating the slurry with ultraviolet light to thereby chlorinate the polyvinyl chloride-based resin.

Abstract: In general, according to one embodiment, a semiconductor device includes first to third conductors, a semiconductor, a first insulator, and an insulation region. The semiconductor includes a metal oxide and extends in the first direction to be in contact with the first conductor and the third conductor. The insulation region is surrounded by the semiconductor and extends in the first direction to be in contact with the first conductor. The semiconductor includes a first portion and a second portion defined between the first portion and the insulation region. A concentration of a first element contained in the metal oxide of the semiconductor is higher in the second portion than in the first portion.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: A film forming apparatus of embodiments includes: a chamber including a sidewall; a shower head provided in an upper part of the chamber; a holder provided in the chamber holding a substrate; a first gas supply pipe supplying a first gas to the shower head; a first valve provided in the first gas supply pipe; at least one gas supply portion provided in a region of the chamber other than the shower head; a second gas supply pipe supplying a second gas to the at least one gas supply portion; a second valve provided in the second gas supply pipe; a gas exhaust pipe exhausting a gas from the chamber; and an exhaust device connected to the gas exhaust pipe.

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, and an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region between the first region and the second electrode, and a third region between the first region and the second region. A gate electrode surrounds the third region, and a gate insulating layer is between the gate electrode and the third region. A first resistivity of the first region is higher than a second resistivity of the second region. A first distance between the first electrode and the gate electrode in a first direction from the first electrode toward the second electrode is shorter than a second distance between the gate electrode and the second electrode in the first direction.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode and including a first region surrounded by the first electrode in a plane perpendicular to a first direction from the first electrode toward the second electrode; a gate electrode facing the oxide semiconductor layer; a gate insulating layer; a first insulating layer between the gate electrode and the first electrode; and a second insulating layer between the gate electrode and the second electrode. A first maximum distance between a first portion of the first electrode and a second portion of the first electrode in a second direction in a cross section parallel to the first direction is larger than a minimum distance between a third portion of the first insulating layer and a fourth portion of the first insulating layer in the second direction.