Abstract: A policy and charging rules function (PCRF) stores a policy rule management table in which a policy rule corresponding to a combination of contract information and a device type is registered and a hierarchical management table in which user information including contract information of a user and information on the device are managed in association with each other, acquires the device type serving as an application target of the policy rule, and a device ID assigned to the device, determines the policy rule according to the acquired device type and the contract information of the user, and instructs a deep packet inspection (DPI) to apply the determined policy rule to the device corresponding to the acquired device ID. The DPI acquires the device ID, and applies the policy rule to communication from the device corresponding to a device ID assigned to the device, and performs control.

Abstract: A PCRF (4) stores a policy rule management table in which a policy rule is associated with a device type, acquires the device type serving as an application target of the policy rule, and a device ID assigned to the device, determines the policy rule corresponding to the acquired type of the device (2), and instructs the DPI to apply the determined policy rule to the device corresponding to the acquired device ID. The DPI (5) acquires the device ID assigned to the device serving as the application target of the policy rule, applies the policy rule provided through the instruction to communication from the device (2) corresponding to the device ID assigned to the device to which the PCRF (4) instructs to apply the determined rule, and performs control.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: A semiconductor storage device includes a channel layer extending along a first direction and including titanium oxide, an electrode layer extending along a second direction crossing the first direction, and a ferroelectric layer between the channel layer and the electrode layer and including titanium.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A communication control apparatus configured to control bands for flows monitors the amount of communication of each of the flows input to the communication line in a predetermined monitoring period. When a sum of the amounts of communication of the flows acquired by the monitoring exceeds a predetermined threshold, the communication control apparatus restricts the communication bands for the top N flows in the descending order of the amount of communication input to the communication line, according to the amounts of communication of the flows. In contrast, the communication control apparatus does not restrict the communication bands for flows lower than the top N flows.

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

Abstract: A communication control device specifies the top N flows in descending order of communication amounts input to a communication line as flows that are communication band limit targets, and limits a communication band of a group of flows that are the communication band limit targets to a predetermined limited band so that a sum of communication amounts of the flows input to the communication line is equal to or smaller than a predetermined line capacity. Here, the communication control device determines a value of N so that a limited band is equal to or larger than a communication amount of a flow having the largest communication amount in a group of flows that are not the communication band limit targets and is equal to or smaller than a communication amount of a flow having the smallest communication amount in the group of flows that are the communication band limit target.

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: A resource conflict arbitration apparatus that arbitrates a conflict between resources includes: reception means configured to receive a request for resource allocation to a device among one or more devices; determination means configured to determine, when a resource requested by the resource allocation request is to be allocated to the device, whether a summed value of resources allocated to the one or more devices exceeds an upper limit value of available resources; and calculation means configured to determine, when it is determined by the determination means that the summed value exceeds the upper limit value, a status of resource allocation to each device to maximize a sum of priorities of resource allocation to the one or more devices under a constraint condition that a summed value of resources allocated to the devices does not exceed the upper limit value.

Abstract: A policy conflict system includes a determining unit that determines, according to an instruction for application of a second polity from a second network provider to a first network provider that performs policy control based on a set of first policies, presence or absence of a third policy conflicting with the second policy, a calculating unit that, when the determining unit determines that the third policy is present, concerning each of the second policy and the third policy, calculates priority levels different from each other referring to a storing unit storing information indicating a target that should be prioritized concerning an item relating to a policy, and an imparting unit that imparts the priority levels calculated by the calculating unit to each of the second policy and the third policy. Consequently, the policy conflict resolution system enables a conflict between policies to be resolved.

Abstract: A communication control device specifies the top N flows in descending order of communication amounts input to a communication line as flows that are communication band limit targets, and limits a communication band of a group of flows that are the communication band limit targets to a predetermined limited band so that a sum of communication amounts of the flows input to the communication line is equal to or smaller than a predetermined line capacity. Here, the communication control device determines a value of N so that a limited band is equal to or larger than a communication amount of a flow having the largest communication amount in a group of flows that are not the communication band limit targets and is equal to or smaller than a communication amount of a flow having the smallest communication amount in the group of flows that are the communication band limit target.

Abstract: A policy conflict detection system includes a determination unit configured to determine, in response to an instruction to apply to a first network operator which performs policy control based on a set of first policies, a second policy from a second network operator, whether a third policy, which matches the second policy in terms of a priority, an application period, a control target, and a control condition and which has a control content exclusive of that of the second policy is present among the first policies, thereby enabling detection of conflict of the policies.