Abstract: A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion located on the semiconductor portion, a silicon-containing portion located on the first oxygen-containing portion, a first film located on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion located on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion located on the first high dielectric insulating portion, a second high dielectric insulating portion located on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion located on the second high dielectric insulating portion, and a second film located on the third oxygen-containing portion.

Abstract: A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than 5×1021 atoms/cm3 and consisting mainly of aluminum.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a silicon-containing portion provided on the first oxygen-containing portion, a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion provided on the first high dielectric insulating portion, a second high dielectric insulating portion provided on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion provided on the second high dielectric insulating portion, and a second film provided on the third oxygen-containing portion.

Abstract: A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films.

Abstract: An LED lamp provides a strong red color with a natural appearance. The LED lamp is provided with an LED module and a filter. The LED module includes a blue LED with a main emission peak in the 440 nm to 460 nm wavelength band, a green/yellow phosphor that is excited by light emitted by the blue LED, and a red phosphor that is excited by light emitted by at least one of the blue LED and the green/yellow phosphor. The filter reduces the spectral radiation intensity of at least a portion of the 570 nm to 590 nm wavelength band among light emitted by the LED module.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

Abstract: A disk drive device includes a chassis, a top cover fixed to a chassis, a rotating body on which a disk retained in a disk retaining space formed between the chassis and the top cover is to be mounted, and a bearing body that supports the rotating body in a freely rotatable manner relative to the chassis. The bearing body has a lubricant applied in a predetermined area, and a capturer that captures the vaporized lubricant from the gas-liquid interface is provided in a space in communication with the disk retaining space from the gas-liquid interface of the lubricant.

Abstract: The present invention relates to an electronic device including plural circuit board units that can be removed from the electronic device. The electronic device is designed to increase a data transfer rate between the circuit board units by using a circuit board for interconnect for electrically coupling the circuit board units placed in the electronic device, and using a cable for electrically or optically coupling the circuit board units placed in the electric device, or both of the cables.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device has a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage film formed on the first insulating film, a second insulating film formed on the charge storage film, and a control electrode formed on the second insulating film. In the nonvolatile semiconductor memory device, the second insulating film has a laminated structure that has a first silicon oxide film, a first silicon nitride film, and a second silicon oxide film, a first atom is provided at an interface between the first silicon oxide film and the first silicon nitride film, and/or at an interface between the second silicon oxide film and the first silicon nitride film, and the first atom is selected from the group consisting of aluminum, boron, and alkaline earth metals.

Abstract: A disk drive device includes a chassis, a top cover fixed to a chassis, a rotating body on which a disk retained in a disk retaining space formed between the chassis and the top cover is to be mounted, and a bearing body that supports the rotating body in a freely rotatable manner relative to the chassis. The bearing body has a lubricant applied in a predetermined area, and a capturer that captures the vaporized lubricant from the gas-liquid interface is provided in a space in communication with the disk retaining space from the gas-liquid interface of the lubricant.

Abstract: A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film is formed in a first region above an upper surface of the element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a stack of a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film. A control electrode layer is formed above the interelectrode insulating film. The second silicon oxide film is thinner in the first region than in the third region.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate. An insulating film is provided on the semiconductor substrate. A gate electrode is provided on the insulating film. An SiOCN film covers side surfaces of the gate electrode. A silicon oxide film may be provided between the respective side surfaces of the gate electrode and the SiOCN film.

Abstract: A method of manufacturing a bearing device component is provided. The bearing device includes a shaft and a sleeve that surrounds the shaft, and at least either one of the shaft and the sleeve is referred to as a work. The method includes: a process of forming a coating of an anti-sticking-lube polymer on the work; a process of applying a photoluminescence material to a range overlapping a range where the coating of the anti-sticking-lube polymer is formed; and a condition detecting process of causing the photoluminescence material to emit light by causing the work to be irradiated with excitation light that excites the photoluminescence material, and detecting an applied condition of the photoluminescence material based on the light emission of the photoluminescence material, thereby detecting a condition of the coating of the anti-sticking-lube polymer.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.

Abstract: A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.

Abstract: A disk drive device includes a rotating body that rotates and drives a disk, a stationary body which includes a chassis with a protrusive part and a stator core fastened with the chassis, and a fluid bearing unit. The chassis has a recess with a bottom provided in the protrusive part, and the fluid bearing unit includes an insertion part inserted in the recess with the bottom, and a core encircled part. A gas passage is provided which causes a clearance space between the insertion part and the recess with the bottom to be in communication with a disk retaining space.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer and including a first high dielectric insulating film which has a higher relative permittivity than a silicon nitride film and a second high dielectric insulating film which has a higher relative permittivity than a silicon nitride film, the first and second high dielectric insulating films being structured so that a silicon oxide film is interposed between them, a control electrode formed on the second insulation layer, a first portion formed between the charge storage layer and the second insulation layer and containing silicon and nitrogen, and a second portion containing silicon and oxygen and located between the charge storage layer and the second insulation layer.

Abstract: A rotating device is a device in which a sleeve of a rotor surrounds a shaft of a fixed body, a lubricant intervening between the shaft and the sleeve. A gap between the shaft and the sleeve includes two dynamic pressure generation portions spaced apart from each other in an axial direction. The rotor and the fixed body are arranged such that a center of gravity of the rotor having a plurality of magnetic recording disks mounted thereon is positioned between the two dynamic pressure generation portions.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

Abstract: In the brushless motor, a hub has a cylindrical separating wall in between a yoke and two magnetic recording disks. The yoke is affixed to the inner surface of the separating wall of the hub using both a press-fit and adhesion. A first convex portion and a second convex portion are formed on the inner surface of the separating wall, and the yoke is pressed against these convex portions in the case where the yoke is press-fit. The first convex portion and the second convex portion are formed in a ring shape around the rotational axis of the motor. The diameter of the first convex portion is less than the diameter of the second convex portion.