Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads. In a molding member-sealed semiconductor device wherein the semiconductor chip is fixed to the heat radiation plate, the tip thickness t′ of the inner leads is made less than the thickness t of the other portions of the inner leads secured to the heat radiation plate.

Abstract: An insulating adhesive for electronic parts, which is to be used for bonding a semiconductor chip to a lead frame and comprises a resin and a solvent, the resin having (A) a weight average molecular weight (Mw) of 30,000 to 300,000 based on conversion into polystyrene and (B) a ratio of weight average molecular weight (Mw)/number average molecular weight (Mn) of 5 or less, and (C) the insulating adhesive for electronic parts having a viscosity of 5,000 to 100,000 mPa.s at a rotation number of 10 rpm and a viscosity ratio (&eegr;1 rpm/&eegr;10 rpm) of 1.0 to 6.0 as measured at 25° C. with an E-type viscometer.

Abstract: A semiconductor device includes a semiconductor chip having a plurality of electrodes formed on a first major surface thereof, a resin package sealing the semiconductor chip therein, a plurality of leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.

Abstract: A semiconductor device comprises a semiconductor chip having a plurality of electrodes formed in a first major surface thereof, a resin package sealing the semiconductor chip therein, a plurality leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: A semiconductor device comprises a semiconductor chip having a plurality of electrodes formed in a first major surface thereof, a resin package sealing the semiconductor chip therein, a plurality leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.

Abstract: A pattern of more than one conductive layer overlying a fuse formed in a TEG region is subject to OR processing; further, a combined or “synthetic” pattern with an opening pattern of one or more testing pads connected to said fuse added thereto is copied by transfer printing techniques to a photosensitive resin layer that is coated on the surface of a semiconductor wafer, thereby forcing the resin layer to reside only in a selected area of a scribe region, to which area the synthetic pattern has been transferred.

Abstract: A semiconductor device includes a semiconductor chip having a plurality of electrodes formed on a first major surface thereof, a resin package sealing the semiconductor chip therein, of leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: An adhesive, comprising (A) a polymeric MDI, (B) modified polyvinyl acetate emulsion, (C) aqueous polyvinyl alcohol solution, and (D) a filler. Preferably, amass ratio of A:B:C:D is 30:(60-160):(50-160):(10-140) provided that the aqueous polyvinyl alcohol solution (C) is in a concentration of 10% by mass.

Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.

Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.

Abstract: Low-cost, high-purity strontium nitrate that is low in Ba, Na, Ca, Cr, and other impurities and that is suitable for use in airbags or the like is provided. High-purity strontium nitrate having a Ba content of 0.01 wt % or lower, an Na content of 0.005 wt % or lower, a Ca content of 0.01 wt % or lower, a Cr content of less than 0.001 wt %, and a purity of 99.5 wt % or higher is produced by a manufacturing method comprising a first step for performing crystallization by adding nitric acid to an aqueous solution obtained by dissolving a strontium compound as a starting material, a second step for separating the resulting crystals, a third step for crystallizing the resulting separated solution, and a fourth step for separating the resulting crystals.

Abstract: The resin-sealed package includes a lead frame having a supporting and heat spreading pad and inner and outer leads arranged to surround the supporting and head spreading pad. A tape automated bonding (TAB) structure is provided having a semiconductor chip having bonding pads formed on a periphery of a main surface of the semiconductor chip. A rear surface of the semiconductor chip is fixed to the supporting and head spreading pad. TAB leads are provided on the main surface of the semiconductor chip. One end of each TAB lead is connected with said bonding pads and the other end of each TAB lead is connected with one end of each inner lead of the lead frame. A resin molding is used for sealing the TAB structure and the supporting and head spreading pad and inner leads of the lead frame. An area of the supporting and head spreading pad is larger than that of the semiconductor chip of said TAB structure.

Abstract: A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.

Abstract: A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.

Abstract: In order to improve the package body cracking resistance of an LSI package at the reflow soldering and to provide both a leadframe suitable for fabricating the LSI package according to the flexible manufacturing system and an LSI using the leadframe, the adhered area between a semiconductor chip 2 and a resin is enlarged by making the external size of a die pad 3 smaller than that of the semiconductor chip to be mounted thereon. Moreover, a variety of semiconductor chips 2 having different external sizes can be mounted on the die pad 3 by cutting the leading ends of leads 5 to a suitable length in accordance with the external sizes of the semiconductor chips 2.

Abstract: A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.