Abstract: The photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, a plurality of AD conversion circuits provided corresponding to the plurality of columns, and a control circuit configured to control the AD conversion circuits. The plurality of pixels includes an OB pixel arranged in a first column and an effective pixel arranged in a second column. The plurality of AD conversion circuits each include a first AD conversion circuit including a first comparator receiving a signal of the OB pixel, and a second AD conversion circuit including a second comparator receiving a signal of the effective pixel. The control circuit controls the first and second comparators such that the result of the AD conversion by the first AD conversion circuit is determined earlier than the result of the AD conversion by the second AD conversion circuit for signals of the same level.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A photoelectric conversion device includes a plurality of pixels, a plurality of output lines, to which signals from corresponding pixels are output, respectively, an amplification unit arranged corresponding to each of the plurality of output lines and configured to amplify a signal output to a corresponding output line, a comparison unit arranged corresponding to each of the plurality of output lines and having a first input terminal and a second input terminal, a signal corresponding to an output of the amplification unit being input to the first input terminal, a reference signal being input to the second input terminal, and a switch connecting nodes of the plurality of output lines. During a period before an offset clamping operation is completed, the switch is turned on.

Abstract: A signal processing method for converting analog signals to digital signals of different bit numbers using a sloped ramp signal includes first A/D conversion for converting an analog signal to a digital signal of a first bit number using a first ramp signal with a first slope or converting the analog signal to the digital signal of the first bit number using a second ramp signal with a second slope, and second A/D conversion for converting an analog signal to a digital signal of a second bit number using a third ramp signal with a third slope or converting the analog signal to the digital signal of the second bit number using a fourth ramp signal with a fourth slope, wherein a ratio of the second slope to the first slope is lower than a ratio of the fourth slope to the third slope.

Abstract: A photoelectric conversion apparatus includes a plurality of pixels each including a first avalanche photodiode and a second avalanche photodiode having a light-receiving surface area size different from a light-receiving surface area size of the first avalanche photodiode. The first avalanche photodiode is connected between a first waveform shaping circuit and a first switch. The second avalanche photodiode is connected between a second waveform shaping circuit and a second switch. An inverter circuit is connected between a control node of the first switch and a control node of the second switch.

Abstract: A photoelectric conversion device includes a plurality of pixels, a plurality of output lines, to which signals from corresponding pixels are output, respectively, an amplification unit arranged corresponding to each of the plurality of output lines and configured to amplify a signal output to a corresponding output line, a comparison unit arranged corresponding to each of the plurality of output lines and having a first input terminal and a second input terminal, a signal corresponding to an output of the amplification unit being input to the first input terminal, a reference signal being input to the second input terminal, and a switch connecting nodes of the plurality of output lines. During a period before an offset clamping operation is completed, the switch is turned on.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A photoelectric conversion device can execute a first driving for outputting a signal based on a sum of charges generated in photoelectric conversion units and a second driving for outputting a signal based on charges generated in one photoelectric conversion unit. A first operation mode in which a signal is read from a pixel of one row by the first driving and a second operation mode in which a signal is read from a pixel of one row by continuously performing the first driving and the second driving are switchable for each row. An output signal of a first pixel row is corrected based on a first correction value based on an output signal of a second pixel row read in the first operation mode and a second correction value based on an output signal of the second pixel row read in the second operation mode.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: There is provided an additive processing device that models a workpiece by melting a supplied powder material and forming layers of the melted powder material. The additive processing device includes a laser head configured to supply the powder material to the workpiece and irradiate the workpiece with a laser beam, a drive unit configured to drive the laser head, a recognition unit configured to recognize a height of the workpiece in a laminating direction at a plurality of locations while the laser head is forming a predetermined N-th layer (N being a natural number) of the workpiece, an estimation unit configured to estimate a surface shape of the N-th layer of the workpiece based on the recognized heights at the plurality of locations, and a control unit configured to control the laser head and the drive unit.

Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: The photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, a plurality of AD conversion circuits provided corresponding to the plurality of columns, and a control circuit configured to control the AD conversion circuits. The plurality of pixels includes an OB pixel arranged in a first column and an effective pixel arranged in a second column. The plurality of AD conversion circuits each include a first AD conversion circuit including a first comparator receiving a signal of the OB pixel, and a second AD conversion circuit including a second comparator receiving a signal of the effective pixel. The control circuit controls the first and second comparators such that the result of the AD conversion by the first AD conversion circuit is determined earlier than the result of the AD conversion by the second AD conversion circuit for signals of the same level.

Abstract: The photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, a plurality of AD conversion circuits provided corresponding to the plurality of columns, and a control circuit configured to control the AD conversion circuits. The plurality of pixels includes an OB pixel arranged in a first column and an effective pixel arranged in a second column. The plurality of AD conversion circuits each include a first AD conversion circuit including a first comparator receiving a signal of the OB pixel, and a second AD conversion circuit including a second comparator receiving a signal of the effective pixel. The control circuit controls the first and second comparators such that the result of the AD conversion by the first AD conversion circuit is determined earlier than the result of the AD conversion by the second AD conversion circuit for signals of the same level.

Abstract: A photoelectric conversion apparatus includes a pixel and a counter circuit. The pixel includes a first avalanche photodiode and a second avalanche photodiode having different sensitivity to light. The counter circuit is configured to count a first signal based on charges generated in the first avalanche photodiode, and a second signal based on charges generated in the second avalanche photodiode. Processing on the count value is different between a case where a count value output from the counter circuit is larger than a threshold value and a case where the count value output from the counter circuit is smaller than the threshold value.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: There is provided an additive processing device that models a workpiece by melting a supplied powder material and forming layers of the melted powder material. The additive processing device is provided with a laser head configured to supply the powder material to the workpiece and irradiate the workpiece with a laser beam, a drive unit configured to drive the laser head, a recognition unit configured to recognize a height of the workpiece in a laminating direction while the laser head is forming an N-th layer (N being a natural number) of the workpiece, a generation unit configured to generate a drive path for the laser head for formation of an N+1-th layer of the workpiece, based on the recognized height, and a control unit configured to control the drive unit based on the drive path.

Abstract: A photoelectric conversion apparatus includes a pixel which includes a photoelectric conversion element; a signal line connected with the pixel; a voltage-current conversion unit configured to convert a voltage signal of the signal line into current; and a conversion unit that includes an oversampling type analog-to-digital conversion circuit that converts the current outputted from the voltage-current conversion unit into digital signals. The voltage-current conversion unit converts the voltage signal of the signal line into the current without sampling and holding and outputs the converted current to the conversion unit.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.