Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Abstract: According to the present disclosure, column circuits operate selectively in a first drive mode to output a comparison signal or a second drive mode to acquire a correction value of a first reference signal and a second reference signal, and a selector circuit of a second column circuit selects the same reference signal out of the first reference signal and the second reference signal in the first drive mode and the second drive mode.

Abstract: There is provided a wire for a reed switch used for a material of a reed piece comprised by a reed switch, the wire being composed of an iron-group alloy containing Fe and 0 mass % or more and less than 10 mass % of Ni, with a total content of the Fe and the Ni satisfying 10 mass % or more and less than 20 mass %, with a balance of Co and an impurity, the iron-group alloy having a cubic crystal structure, the wire having a Curie temperature of 900° C. or higher and a specific resistance of 15 ??·cm or less at normal temperature, a ratio of a thermal expansion coefficient of a glass tube comprised by the reed switch to a thermal expansion coefficient of the wire for the reed switch being 90% or more, the wire having a diameter of 1 mm or less.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A photoelectric conversion device includes a pixel that outputs a pixel signal in accordance with an incident light, a plurality of signal holding units each configured to hold the pixel signal, an AD conversion unit that converts the pixel signal from analog signal to digital signal, a first switch circuit provided between the pixel and the plurality of signal holding units, and a second switch circuit provided between the plurality of signal holding units and the AD conversion unit. The first switch circuit is configured to connect the pixels to the plurality of signal holding units individually to hold one pixel signal in the plurality of signal holding units, respectively, in different sampling periods, the second switch circuit is configured to switch connection between the plurality of signal holding units and the AD conversion unit, and pixel signals held in the plurality of signal holding units are averaged and output.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A semiconductor device has a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor is arranged in an active region of a semiconductor substrate, and a gate electrode and the active region overlap with each other in a plan view and also have a portion located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, an impurity concentration of the second conductivity type is higher at the end than on the center side of the portion.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: Disclosed embodiments perform readout at a high rate without being affected by transition of pixel transistors. A solid state imaging device of an embodiment has a pixel having a photoelectric conversion unit that generates charges, an amplification transistor including an input node that receives a signal based on the charges generated in the photoelectric conversion unit, and a reset transistor that resets the potential of the input node of the amplification transistor; a signal processing circuit that reads out a signal from the pixel via a signal line; and a switch provided between the signal line and an input node of the signal processing circuit, and a signal value of a control signal applied to the gate of the reset transistor changes while the switch is in the off-state.

Abstract: An imaging device includes: a plurality of pixels arranged to form rows and columns and each configured to output a signal in accordance with an incident light, a plurality of column signal processing units provided in association with the columns and each having an A/D conversion unit that performs A/D conversion on a signal output from the pixels arranged on a corresponding column, a plurality of memory units provided in association with the columns and each having a memory that holds digital data output from the column signal processing unit of a corresponding column, a transfer unit that sequentially outputs the digital data held in each of the plurality of memory units to a common output line, and a bit value inversion unit that inverts a value of a bit of one of first and second digital data sequentially output to the common output line.

Abstract: An electronic circuit includes a generating circuit for generating a first group of signals and a second group of signals, and a transmission path for transmitting the first group of signals and the second group of signals. The first group of signals are composed of signals synchronized with a first edge that is one of the rising edge and the falling edge of a reference clock, and the second group of signals are composed of signals synchronized with a second edge that is the other of the rising edge and falling edge. The transmission path includes first transmission lines for transmitting the signals composing the first group and second transmission lines for transmitting the signals composing the second group, and the first and second transmission lines are alternately arranged.

Abstract: An image sensing device includes pixels forming rows and columns, sets of control lines respectively assigned to the rows such that one set of control lines is connected to one of the rows, a row drive circuit configured to drive the sets of control lines, and an assist circuit. Each set includes a first control line and a second control line. The row drive circuit includes a first drive circuit connected to a first end of the first control line and a second drive circuit connected to first end of the second control line. The assist circuit includes an assist drive circuit connected to a second end of the first control line so as to drive the first control line in accordance with a control signal supplied to the second control line.

Abstract: An electrode material is composed of at least 0.2 mass % and at most 1.0 mass % of Y, at least 0 mass % and at most 0.2 mass % of Al, at least 0.2 mass % and at most 1.6 mass % of Si, at least 0.05 mass % and at most 1.0 mass % of Cr, at least 0.05 mass % and at most 0.5 mass % of Ti, at least 0.1 mass % and at most 0.5 mass in total of one or more elements selected from among Yb, Sb, Ir, Zr, Hf, Pt, Re, Pd, Rh, Ru, Nb, V, W, Mo, and Ta, and a remainder composed of Ni and an inevitable impurity.

Abstract: A machine tool includes a bed supported on a ground by supporting jigs, a table movable in an X-axis direction, a spindle head movable in a Y-axis direction, a quill provided to be movable in a Z-axis direction, a spindle supported by the quill to be rotatable about its axis, feed mechanisms for moving the table and the like in the axis directions, and a numerical controller controlling operation of the feed mechanisms, and the numerical controller is configured to calculate motion errors based on load values acting on the supporting jigs by a motion locus estimator, an influence coefficient storage, a motion error calculator, and a motion locus storage, generate a correction signal for compensating for the motion errors by a position corrector, and add the generated correction signals to a position control signal transmitted from a position generator to a position controller.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.

Abstract: There is provided a wire for a reed switch used for a material of a reed piece comprised by a reed switch, the wire being composed of an iron-group alloy containing Fe and 0 mass % or more and less than 10 mass % of Ni, with a total content of the Fe and the Ni satisfying 10 mass % or more and less than 20 mass %, with a balance of Co and an impurity, the iron-group alloy having a cubic crystal structure, the wire having a Curie temperature of 900° C. or higher and a specific resistance of 15 ??·cm or less at normal temperature, a ratio of a thermal expansion coefficient of a glass tube comprised by the reed switch to a thermal expansion coefficient of the wire for the reed switch being 90% or more, the wire having a diameter of 1 mm or less.

Abstract: An electrode material is composed of at least 0.2 mass % and at most 1.0 mass % of Y, at least 0 mass % and at most 0.2 mass % of Al, at least 0.2 mass % and at most 1.6 mass % of Si, at least 0.05 mass % and at most 1.0 mass % of Cr, at least 0.05 mass % and at most 0.5 mass % of Ti, at least 0.1 mass % and at most 0.5 mass in total of one or more elements selected from among Yb, Sb, Ir, Zr, Hf, Pt, Re, Pd, Rh, Ru, Nb, V, W, Mo, and Ta, and a remainder composed of Ni and an inevitable impurity.