Abstract: To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.

Abstract: A machine tool 1 comprises a bed 11, a column 12, a spindle head 15, a spindle 16, a saddle 17, a table 18, a feed mechanism for moving the spindle head 15, the saddle 17 and the table 18 in Z-axis, Y-axis and X-axis directions respectively, a position detector for detecting the positions of the spindle head 15, saddle 17 and table 18, a controller for feedback controlling the feed mechanism, a position detector 51 for detecting the position of the spindle head 15, a position detector 54 for detecting the position of the spindle head 15, a position detector 57 for detecting the position of the table 18, and a measurement frame 50 which is configured with a different member from the bed 11 and the column 12 and on which readers 53, 56, 59 of the position detectors 51, 54, 57 are disposed.

Abstract: An electrode material contains, on a mass percent basis, Al: 0.005% to 0.2%, Si: 0.2% to 1.6%, Cr: 0.05% to 1.0%, Ti: 0.05% to 0.5%, and Y: 0.2% to 1.0%. The remainder are Ni and inevitable impurities. The Si/Cr mass ratio is 1 or more. Because of the inclusion of specific amounts of Al, Si, Cr, and Y and the Si content higher than the Al content, the electrode material has an oxidation inhibiting effect. The inclusion of the specific amount of Ti can reduce the occurrence of expansion and cracking of the oxide film. Because of the inclusion of the specific amount of Y, the oxide film can maintain the microstructure even at high temperatures and have high resistance to high-temperature oxidation. Having a Si/Cr ratio of 1 or more, the oxide film has improved corrosion resistance and is resistant to corrosion by corrosive liquids.

Abstract: The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.

Abstract: A solid-state imaging device includes a plurality of pixels arranged in a matrix, a plurality of readout circuits provided in each column of the plurality of pixels arranged in a matrix, configured to read out for each column a signal of the plurality of pixels, a plurality of comparison units configured to compare a signal output from the plurality of readout circuits with a reference signal whose level changes with time, a counter configured to perform a count operation from when the level of the reference signal starts to change, first and second buffers each configured to buffer a count value of the counter, and a plurality of storing units connected to the plurality of comparison units, configured to store a count value of the counter when a magnitude relation between a signal output from the plurality of the readout circuits and the reference signal is inverted.

Abstract: A constant current source has a first current source circuit for outputting a first current; a second current source circuit for outputting a second current according to a reference voltage; a current comparison circuit for comparing magnitudes of the first and second currents; and a current adjustment unit for adjusting a current value of the first current output from the first current source circuit in accordance with a comparison result of the current comparison circuit.

Abstract: It is an object of the present invention to provide a solid-state imaging apparatus that outputs digital signals at high speed. A solid-state imaging apparatus is provided that includes plural analog-to-digital converters that convert analog signals obtained by photoelectric conversion into digital signals, plural digital memories that store the digital signals converted by the analog-to-digital converters, plural block digital output lines that are provided to correspond to blocks of the plural digital memories and to which the digital signals stored in the plural digital memories included in the blocks are output, a common digital output line that outputs the digital signals output from the plural block digital output lines, buffer circuits that buffer the digital signals output from the block digital output lines, and block selecting units that can switch the block digital output lines electrically connected to the common digital output line.

Abstract: A solid-state image sensing device comprises a pixel which outputs a pixel signal, a first conversion unit which converts the pixel signal into a digital signal with a first bit length, and a second conversion unit which converts, into a digital signal with a second bit length, an analog signal obtained by subtracting, from the pixel signal, an analog signal corresponding to the digital signal with the first bit length. The second conversion unit comprises a current source, a first capacitance, and a switching unit for switching a supply destination of a current supplied from the current source to one of the first capacitance and a reference potential. The second conversion unit performs the conversion based on comparison between a reference voltage and the analog signal which is charged in the first capacitance and is obtained as a subtraction result.

Abstract: A photoelectric conversion device includes a pixel array including a plurality of pixels arranged in a matrix, a plurality of blocks including a plurality of pairs, each of the pairs including a comparator provided correspondingly with a column in the pixel array and a memory provided correspondingly with the comparator, and a block information supply unit configured to supply block information which indicates a location of a block, to the plurality of memories included in the blocks.

Abstract: An image sensor comprises a pixel portion formed by arraying pixels including photoelectric conversion portions in a matrix, a plurality of A/D converters which are provided in a one-to-one correspondence to pixel columns of the pixel portion, an adding unit which adds pixel signals from a plurality of pixel columns to each other, and a connecting portion capable of inputting, to an arbitrary A/D converter, a sum signal obtained by adding the pixel signals by the adding unit.

Abstract: A charge and discharge circuit and a battery pack, both capable of voluntarily perform proper switching between a charge operation and a discharge operation of a secondary battery according to various situations, are provided. The charge and discharge circuit of a secondary battery is one capable of charging the secondary battery E2 by a power source voltage and of supplying power from the secondary battery E2 to an external device 3.

Abstract: A workpiece is machined by setting a frequency response band of a control system for a rotation drive motor or a feed drive motor so that tool abrasion is within a predetermined allowable range. The frequency response band may be adjusted by adjusting a proportional gain and an integral gain. With the workpiece machined by such a process, where the frequency response band maintains tool abrasion within the allowable range, machining quality and efficiency are improved.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A controller for a conventional synchronous motor is configured to produce desired output characteristics. The controller generates a drive current for based on a current command, has a motor correcting section and a gain adjusting section which output a compensated current command based on the current command according to a compensating transfer function for cancelling a first transfer function showing a first torque response characteristic of the synchronous motor and replacing it with a second transfer function showing a second torque response characteristic, and a current controller which generates a drive current corresponding to the compensated current command.

Abstract: A solid-state imaging apparatus, comprising an imaging unit and a conversion unit, including a first processing unit and a second processing unit, for converting an analog signal output from the imaging unit into a digital signal, wherein the first processing unit generates a higher-order bit of a digital signal corresponding to the analog signal, and the second processing unit, to which a clock signal having a first edge and a second edge is supplied, starts charging a capacitor and ends the charging in response to an elapse of a predetermined time since the first edge of the clock signal supplied immediately after the charging has started, and then generates a lower-order bit of the digital signal.

Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: An apparatus includes a pixel array in which pixels for outputting an analog signal are arranged in a matrix, vertical output lines each of which is connected to pixels in a same column, A/D conversion units, which are individually connected to the vertical output lines, for converting the analog signal into a digital signal, and a constant current supply unit for supplying a constant current to the A/D conversion units. Each of the A/D conversion units includes an integration unit for integrating the constant current, a comparison unit for comparing the integrated constant current with the analog signal and outputting a comparison signal, and a digital signal storage unit for storing a digital signal corresponding to the comparison signal. The integration unit includes an input capacitor for receiving the constant current. The comparison unit is connected to the constant current supply unit via the input capacitor.

Abstract: It is an object of the present invention to provide a solid-state imaging apparatus that outputs digital signals at high speed. A solid-state imaging apparatus is provided that includes plural analog-to-digital converters that convert analog signals obtained by photoelectric conversion into digital signals, plural digital memories that store the digital signals converted by the analog-to-digital converters, plural block digital output lines that are provided to correspond to blocks of the plural digital memories and to which the digital signals stored in the plural digital memories included in the blocks are output, a common digital output line that outputs the digital signals output from the plural block digital output lines, buffer circuits that buffer the digital signals output from the block digital output lines, and block selecting units that can switch the block digital output lines electrically connected to the common digital output line.