Patents by Inventor Keith Comendant
Keith Comendant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230253193Abstract: A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spray coat layer. The bond layer has a second thickness and a second thermal conductivity. A ceramic layer is arranged on the bond layer. At least one of the first thickness and the second thickness varies in at least one of a radial direction and an azimuthal direction such that a third thermal conductivity between the ceramic layer and the baseplate varies in the at least one of the radial direction and the azimuthal direction.Type: ApplicationFiled: November 16, 2021Publication date: August 10, 2023Inventors: Jeremy George SMITH, Alexander MATYUSHKIN, Eric SAMULON, Keith COMENDANT, Yixuan YU
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Publication number: 20230075462Abstract: An edge ring system comprising a substrate support configured to support a substrate during plasma processing and including a baseplate and an upper layer arranged on the baseplate. An edge ring support includes a first body and an electrostatic clamping electrode arranged in the first body. The edge ring support is arranged above the baseplate and radially outside of the substrate during processing. An edge ring includes a second body arranged on and electrostatically clamped to the edge ring support during plasma processing.Type: ApplicationFiled: February 3, 2021Publication date: March 9, 2023Inventors: Alexander MATYUSHKIN, Keith COMENDANT, Adam Christopher MACE, Darrell EHRLICH, John HOLLAND, Felix Leib KOZAKEVICH, Alexei MARAKHTANOV
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Publication number: 20220223387Abstract: A spark suppression apparatus for a helium line in an electrostatic chuck in a plasma processing chamber is provided. The spark suppression apparatus comprises a dielectric multilumen plug in the helium line, wherein the dielectric multilumen plug has a plurality of lumens, wherein the plurality of lumens are numbered between 30 to 100,000 lumens and have a width of between 1 micron and 200 microns.Type: ApplicationFiled: October 29, 2019Publication date: July 14, 2022Inventors: Alexander MATYUSHKIN, Keith COMENDANT, Darrell EHRLICH, Eric SAMULON
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Patent number: 11302556Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.Type: GrantFiled: April 13, 2020Date of Patent: April 12, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Anthony J. Ricci, Keith Comendant, James Tappan
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Patent number: 10804129Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.Type: GrantFiled: May 24, 2018Date of Patent: October 13, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Christopher Kimball, Keith Gaff, Alexander Matyushkin, Zhigang Chen, Keith Comendant
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Patent number: 10770363Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.Type: GrantFiled: August 7, 2018Date of Patent: September 8, 2020Assignee: Lam Research CorporationInventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
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Publication number: 20200251370Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.Type: ApplicationFiled: April 13, 2020Publication date: August 6, 2020Inventors: Anthony J. Ricci, Keith Comendant, James Tappan
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Patent number: 10720346Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.Type: GrantFiled: June 15, 2016Date of Patent: July 21, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Patent number: 10636689Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.Type: GrantFiled: July 24, 2014Date of Patent: April 28, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Anthony J. Ricci, Keith Comendant, James Tappan
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Patent number: 10236193Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.Type: GrantFiled: April 26, 2017Date of Patent: March 19, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Publication number: 20180374763Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.Type: ApplicationFiled: August 7, 2018Publication date: December 27, 2018Inventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
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Publication number: 20180286642Abstract: An apparatus for processing a substrate is provided. A first coolant gas pressure system, a second coolant gas pressure system, a third coolant gas pressure system, and a fourth coolant gas pressure system are provided to provide independent gas pressures. An electrostatic chuck has a chuck surface with a center point and a radius and comprises a first plurality of coolant gas ports further than a first radius from a center point, a second plurality of coolant gas ports spaced between the first radius from the center point and a second radius from the center point, a third plurality of coolant gas ports spaced between the second radius from the center point and a third radius from the center point, and a fourth plurality of coolant gas ports is spaced within the third radius from the center point. An outer sealing band extends around the chuck surface.Type: ApplicationFiled: March 30, 2018Publication date: October 4, 2018Inventors: Alexander MATYUSHKIN, John Patrick HOLLAND, Mark H. WILCOXSON, Keith COMENDANT, Taner OZEL, Fangli HAO
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Publication number: 20180277412Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.Type: ApplicationFiled: May 24, 2018Publication date: September 27, 2018Inventors: Christopher KIMBALL, Keith GAFF, Alexander MATYUSHKIN, Zhigang CHEN, Keith COMENDANT
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Patent number: 10056225Abstract: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.Type: GrantFiled: December 23, 2013Date of Patent: August 21, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Keith William Gaff, Harmeet Singh, Keith Comendant, Vahid Vahedi
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Patent number: 10049948Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.Type: GrantFiled: November 30, 2012Date of Patent: August 14, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
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Patent number: 10002782Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.Type: GrantFiled: October 17, 2014Date of Patent: June 19, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Christopher Kimball, Keith Gaff, Alexander Matyushkin, Zhigang Chen, III, Keith Comendant
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Publication number: 20170229327Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.Type: ApplicationFiled: April 26, 2017Publication date: August 10, 2017Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Patent number: 9646861Abstract: A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.Type: GrantFiled: October 17, 2013Date of Patent: May 9, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Publication number: 20160300741Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.Type: ApplicationFiled: June 15, 2016Publication date: October 13, 2016Applicant: LAM RESEARCH CORPORATIONInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Patent number: 9392643Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.Type: GrantFiled: October 24, 2013Date of Patent: July 12, 2016Assignee: LAM RESEARCH CORPORATIONInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant