Patents by Inventor Keith Comendant

Keith Comendant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12237201
    Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.
    Type: Grant
    Filed: March 19, 2024
    Date of Patent: February 25, 2025
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Keith Comendant, John Patrick Holland
  • Publication number: 20240347366
    Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.
    Type: Application
    Filed: March 19, 2024
    Publication date: October 17, 2024
    Inventors: Alexander MATYUSHKIN, Keith Comendant, John Patrick Holland
  • Patent number: 11302556
    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: April 12, 2022
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Anthony J. Ricci, Keith Comendant, James Tappan
  • Patent number: 10804129
    Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: October 13, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Christopher Kimball, Keith Gaff, Alexander Matyushkin, Zhigang Chen, Keith Comendant
  • Patent number: 10770363
    Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: September 8, 2020
    Assignee: Lam Research Corporation
    Inventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
  • Publication number: 20200251370
    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.
    Type: Application
    Filed: April 13, 2020
    Publication date: August 6, 2020
    Inventors: Anthony J. Ricci, Keith Comendant, James Tappan
  • Patent number: 10720346
    Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: July 21, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
  • Patent number: 10636689
    Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: April 28, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Anthony J. Ricci, Keith Comendant, James Tappan
  • Patent number: 10236193
    Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: March 19, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
  • Publication number: 20180374763
    Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.
    Type: Application
    Filed: August 7, 2018
    Publication date: December 27, 2018
    Inventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
  • Patent number: 10056225
    Abstract: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: August 21, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Keith William Gaff, Harmeet Singh, Keith Comendant, Vahid Vahedi
  • Patent number: 10049948
    Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: August 14, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
  • Patent number: 10002782
    Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: June 19, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Christopher Kimball, Keith Gaff, Alexander Matyushkin, Zhigang Chen, III, Keith Comendant
  • Publication number: 20170229327
    Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.
    Type: Application
    Filed: April 26, 2017
    Publication date: August 10, 2017
    Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
  • Patent number: 9646861
    Abstract: A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: May 9, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
  • Publication number: 20160300741
    Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.
    Type: Application
    Filed: June 15, 2016
    Publication date: October 13, 2016
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
  • Patent number: 9392643
    Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: July 12, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
  • Patent number: 9322795
    Abstract: A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: April 26, 2016
    Assignee: Lam Research Corporation
    Inventors: Jaehyun Kim, Arthur H. Sato, Keith Comendant, Qing Liu, Feiyang Wu
  • Publication number: 20160111314
    Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 21, 2016
    Inventors: Christopher Kimball, Keith Gaff, Alexander Matyushkin, Zhigang Chen, Keith Comendant
  • Patent number: 9318349
    Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: April 19, 2016
    Assignee: Lam Research Corporation
    Inventors: Leonard J. Sharpless, Keith Comendant