Abstract: A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.

Abstract: An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

Abstract: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.

Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile.

Abstract: An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.

Abstract: A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

Abstract: An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.

Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.