Patents by Inventor Keith Comendant
Keith Comendant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9322795Abstract: A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.Type: GrantFiled: April 22, 2013Date of Patent: April 26, 2016Assignee: Lam Research CorporationInventors: Jaehyun Kim, Arthur H. Sato, Keith Comendant, Qing Liu, Feiyang Wu
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Publication number: 20160111314Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.Type: ApplicationFiled: October 17, 2014Publication date: April 21, 2016Inventors: Christopher Kimball, Keith Gaff, Alexander Matyushkin, Zhigang Chen, Keith Comendant
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Patent number: 9318349Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.Type: GrantFiled: July 24, 2013Date of Patent: April 19, 2016Assignee: Lam Research CorporationInventors: Leonard J. Sharpless, Keith Comendant
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Patent number: 9093483Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: GrantFiled: March 5, 2014Date of Patent: July 28, 2015Assignee: Lam Research CorporationInventors: Jason Augustino, Anthony de la Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Publication number: 20140332161Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.Type: ApplicationFiled: July 24, 2014Publication date: November 13, 2014Inventors: Anthony J. Ricci, Keith Comendant, James Tappan
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Patent number: 8884194Abstract: A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.Type: GrantFiled: December 10, 2013Date of Patent: November 11, 2014Assignee: Lam Research CorporationInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Patent number: 8821639Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.Type: GrantFiled: September 19, 2011Date of Patent: September 2, 2014Assignee: Lam Research CorporationInventors: Anthony J. Ricci, Keith Comendant, James Tappan
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Publication number: 20140187049Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: ApplicationFiled: March 5, 2014Publication date: July 3, 2014Applicant: Lam Research CorporationInventors: Jason Augustino, Anthony de la Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, JR.
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Publication number: 20140154819Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.Type: ApplicationFiled: November 30, 2012Publication date: June 5, 2014Applicant: LAM RESEARCH CORPORATIONInventors: Keith William Gaff, Tom Anderson, Keith Comendant, Ralph Jan-Pin Lu, Paul Robertson, Eric A. Pape, Neil Benjamin
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Patent number: 8735298Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.Type: GrantFiled: October 22, 2012Date of Patent: May 27, 2014Assignee: Lam Research CorporationInventors: Anthony J. Ricci, Keith Comendant, James Tappan
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Patent number: 8709202Abstract: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.Type: GrantFiled: December 14, 2010Date of Patent: April 29, 2014Assignee: Lam Research CorporationInventors: Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Jason Augustino, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Publication number: 20140110060Abstract: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.Type: ApplicationFiled: December 23, 2013Publication date: April 24, 2014Applicant: Lam Research CorporationInventors: Keith William Gaff, Harmeet Singh, Keith Comendant, Vahid Vahedi
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Patent number: 8702866Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: GrantFiled: December 18, 2006Date of Patent: April 22, 2014Assignee: Lam Research CorporationInventors: Jason Augustino, Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Publication number: 20140096909Abstract: A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.Type: ApplicationFiled: December 10, 2013Publication date: April 10, 2014Applicant: Lam Research CorporationInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Publication number: 20140047705Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.Type: ApplicationFiled: October 24, 2013Publication date: February 20, 2014Applicant: Lam Research CorporationInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Publication number: 20140045337Abstract: An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to a power supply and at least two of the heaters and each power return line is connected to at least two of the heaters, and a switching device which independently connects each one of the heaters to one of the power supply lines and one of the power return lines so as to provide time-averaged power to each of the heaters by time divisional multiplexing of switches of the switching device. The method includes supplying power to each of the heaters sequentially using a time-domain multiplexing scheme.Type: ApplicationFiled: October 17, 2013Publication date: February 13, 2014Applicant: Lam Research CorporationInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Patent number: 8642480Abstract: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.Type: GrantFiled: December 13, 2010Date of Patent: February 4, 2014Assignee: Lam Research CorporationInventors: Keith William Gaff, Harmeet Singh, Keith Comendant, Vahid Vahedi
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Patent number: 8637794Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.Type: GrantFiled: October 21, 2009Date of Patent: January 28, 2014Assignee: Lam Research CorporationInventors: Harmeet Singh, Keith Gaff, Neil Benjamin, Keith Comendant
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Patent number: 8624168Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.Type: GrantFiled: September 20, 2011Date of Patent: January 7, 2014Assignee: Lam Research CorporationInventors: Keith William Gaff, Keith Comendant
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Publication number: 20130306239Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.Type: ApplicationFiled: July 24, 2013Publication date: November 21, 2013Applicant: LAM RESEARCH CORPORATIONInventors: Leonard J. Sharpless, Keith Comendant