Abstract: A method for manufacturing a semiconductor substrate, the semiconductor substrate including: a substrate; an initial layer provided on the substrate; a high-resistance layer provided on the initial layer which is composed of a nitride-based semiconductor and contains carbon; and a channel layer provided on the high-resistance layer which is composed of a nitride-based semiconductor, and at a step of forming the high-resistance layer, a gradient is given to a preset temperature at which the semiconductor substrate is heated, and the high-resistance layer is formed such that the preset temperature at the start of formation of the high-resistance layer is different from the preset temperature at the end of formation of the high-resistance layer. It is possible to provide the method for manufacturing a semiconductor substrate, which can reduce a concentration gradient of carbon concentration in the high-resistance layer and also provide a desired value for the carbon concentration.

Abstract: A method for producing a semiconductor epitaxial wafer, including steps of: fabricating an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon-based substrate; observing the outer edge portion of the fabricated epitaxial wafer; and removing portions in which a crack, epitaxial layer peeling, and a reaction mark observed in the step of observing are present. As a result, a method for producing a semiconductor epitaxial wafer in which a completely crack-free semiconductor epitaxial wafer can be obtained, is provided.

Abstract: An ultrasound unit includes a plurality of elements each including N cells, in each of which a bottom electrode and a top electrode that constitutes a membrane are arranged facing each other with a cavity therebetween, wherein the element has N1 first cells and N2 (where N1?N2, N1+N2=N) second cells having higher reception sensitivity and lower transmission sensitivity than the first cells.

Abstract: A shape calculating apparatus includes a light source, an optical fiber provided with detection targets. The detection targets have mutually different light absorption spectra to decrease a quantity of light propagated by the fiber in accordance with a bend shape of the fiber. The apparatus also includes a light detector to detect light quantity information at wavelengths included in the light absorption spectra, a calculator to execute a calculation relating to a shape of each detection target based on the light quantity information. The apparatus further includes a setting change unit to change, with respect to each of the wavelengths, a dynamic range of at least either an intensity of light input to the optical fiber or an electric signal generated by the detector.

Abstract: A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.

Abstract: A curvature sensor is to be mounted along detection target to allow a curvature of the detection target. The sensor includes a light source, a light guide to guide light from the light source and sensing parts having light absorbability. The sensing parts include absorption bands having different intrinsic absorption patterns and characteristic absorption bands having intrinsic characteristic absorption patterns in the absorption bands. A light detector allows residual light not absorbed by the characteristic absorption bands to be detected, the residual light being included in light of bands corresponding to the characteristic absorption bands and radiated to the sensing parts from the light source. A calculator computes a curvature of the detection target based on a rate of change in the residual light.

Abstract: A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/cm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.

Abstract: A method for producing a semiconductor epitaxial wafer, including steps of: fabricating an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon-based substrate; observing the outer edge portion of the fabricated epitaxial wafer; and removing portions in which a crack, epitaxial layer peeling, and a reaction mark observed in the step of observing are present. As a result, a method for producing a semiconductor epitaxial wafer in which a completely crack-free semiconductor epitaxial wafer can be obtained, is provided.

Abstract: Sensing parts are formed in different directions in a circumferential direction in substantially a same position in the longitudinal direction thereof. Each sensing part is configured to include an optical characteristic changing member which generates the optical signals having absorption wavelength characteristic regions that vary from sensing part to sensing part by giving an optical characteristic change, which differs from that of other sensing parts, to the sensor light incident thereon in accordance with an amount of bending in a specific direction. A light detector detects the optical signals included in sensor light from a light source, which has passed through the sensing parts and undergone the optical characteristic change.

Abstract: A bend information computation apparatus is to compute bend information representing a direction and a magnitude of bend of a target group including targets disposed at an identical position along a light guide. Each target modulates the intensity of guided light in accordance with the direction and magnitude of bend.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: A semiconductor substrate including a substrate, a buffer layer having a nitride-based semiconductor containing carbon provided on the substrate, a high-resistance layer having a nitride-based semiconductor containing carbon provided on the buffer layer, and a channel layer having a nitride-based semiconductor provided on the high-resistance layer, the high-resistance layer including a first region having carbon concentration lower than that of the buffer layer, and a second region which is provided between the first region and the channel layer, and has the carbon concentration higher than the first region.

Abstract: An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer provided on the AlN initial layer, wherein the roughness Sa of the surface of the AlN initial layer on the side where the buffer layer is located is 4 nm or more. As a result, an epitaxial substrate for electronic devices, in which V pits in a buffer layer structure can be suppressed and longitudinal leakage current characteristics can be improved when an electronic device is fabricated therewith, is provided.

Abstract: An epitaxial wafer including: a silicon-based substrate; a first buffer layer on the substrate and including a first multilayer structure buffer region composed of AlxGa1-xN layers and AlyGa1-yN layers (x>y) alternately disposed and a first insertion layer composed of an AlzGa1-zN layer (x>z) and is thicker than the AlyGa1-yN layer, the first regions and insertion layers alternately disposed; a second buffer layer on the first and including a second multilayer structure buffer region composed of Al?Ga1-?N layers and Al?Ga1-?N layers (?>?) alternately disposed and a second insertion layer composed of an Al?Ga1-?N layer (?>?) and is thicker than the Al?Ga1-?N layer, the second regions and insertion layers alternately disposed; and a channel layer on the second buffer layer and thicker than the second insertion layer. The average Al composition in the second buffer layer is higher than that in the first.

Abstract: A capsule endoscope includes, inside a capsule casing, an information acquiring section that acquires information on an inside of a body of a subject, a battery that supplies power, a detection section that, upon detection of introduction to the inside of the body of the subject, outputs a detection signal, a signal receiving section that receives a control signal from an outside and outputs an internal signal, and a control section that controls power supply from the battery to the information acquiring section according to the internal signal and the detection signal.

Abstract: Example embodiments of the present invention relate to systems methods and computer program products for bend estimation. The system comprises a first and second light absorbers disposed at a substantially same position along an axis of a light guide and enabled to absorb first and second respective amounts of a plurality of wavelengths of a light transmitted along the light guide, a light detector enabled to detect respective intensities of the plurality of wavelengths of the light not absorbed by the first and second light absorbers, and a processor enabled to calculate a bend state of the light guide according to the detected intensities of the plurality of wavelengths of the light.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies and other polypeptides, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided. Screening methods are also provided.

Abstract: A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/cm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.