Patents by Inventor Kenichi Goto
Kenichi Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090075946Abstract: In a triterpenic acid having hydroxyl groups, at least one of the hydroxyl groups is phosphorylated to produce a phosphorylated triterpenic acid and/or a salt thereof, thereby improving the solubility of the triterpenic acid in a preparation for external application for the skin and allowing the physiological activity of the triterpenic acid to be exerted satisfactorily. The phosphorylated triterpenic acid is preferably, for example, ursolic acid phosphate and/or a salt thereof. The preparation for external application for the skin is preferably a cosmetic, particularly preferably a quasi-drug.Type: ApplicationFiled: April 13, 2006Publication date: March 19, 2009Applicant: Pola Chemical Industries Inc.Inventors: Michio Ochiai, Kenichi Goto, Yoshihiro Tokudome, Shigenari Hirokawa
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Publication number: 20090035613Abstract: The present invention provides a fuel cell system having means for controlling the flow of coolant within a fuel cell system. A desirable rate of flow of coolant is created, during power generation, by determining the difference in temperature between coolant flowing into individual cell sets of the fuel cell assembly and the temperature of coolant exhausted from the cell assembly. The fuel cell system features controls adapted to evaluate the heat generation state of each fuel cell set and to regulate the temperature of cell sets by controlling the rate circulation of the coolant.Type: ApplicationFiled: January 11, 2007Publication date: February 5, 2009Applicant: NISSAN MOTOR CO., LTD.Inventors: Hayato Chikugo, Kenichi Goto
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Publication number: 20080249235Abstract: A cyclic olefin resin composition which can be suitably used as a material for a substrate having low permittivity, low dielectric tangent, low water absorbability, excellent heat resistance, and the like, and a substrate obtained from the resin composition are provided. In particular, there is provided a novel cyclic olefin resin composition that can be suitably used as a material for a substrate for high frequency circuit dealing with high frequency signal transmission. The cyclic olefin resin composition comprises (A) 5 to 95 parts by weight of a cyclic olefin polymer having a glass transition temperature of 60 to 200° C. and (B) 5 to 95 parts by weight of a flexible copolymer, prepared by polymerizing at least two monomers selected from the group consisting of an olefin compound, a diene compound and an aromatic vinyl hydrocarbon compound, and having a glass transition temperature of 0° C. or below.Type: ApplicationFiled: January 31, 2006Publication date: October 9, 2008Applicant: Mitsui Chemicals, Inc.Inventors: Kazuyoshi Kaneko, Toshiyuki Hirose, Hiroyasu Yamaoka, Kenichi Goto, Akira Hasegawa
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Publication number: 20080166571Abstract: A surface treating method for metallizing the surface of a polymer containing silicon by the use of a non-expensive material and a method for metallizing the surface of or forming a pattern of a metal layer such as a wiring on the surface of a substrate comprising an arbitrary material, or a method for producing fine particles of a specific transition metal are provided. The method for treating the surface of a silicon-containing polymer or a method for preparing fine transition metal particles involves contacting an organosilicon compound with a solid, a solution or a suspension of a specific transition metal salt, to reduce and precipitate the transition metal and thereby precipitate fine particles of the transition metal on the surface of said organosilicon compound or in the organosilicon compound.Type: ApplicationFiled: November 22, 2005Publication date: July 10, 2008Applicant: Mitsui Chemicals Inc.Inventors: Masaki Takahashi, Akiko Kitamura, Kenji Iwata, Hiroshi Watanabe, Kenichi Goto, Jun Kamada
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Patent number: 7334464Abstract: The aircraft tank and gauge system of the present invention provides a fuel tank with a gauge chamber located generally aligned with the tank center of gravity and that has a general vertical orientation when the aircraft is level. The gauge chamber extends from the top of the tank to a height generally equivalent to a high collection point on the tank and/or extends from the bottom of the tank to a height generally equivalent to a low collection point on the tank. As the aircraft pitches and rolls, fuel within a complex-shaped tank, will be measured by a sensor in the gauge chamber. In order to prevent any type of vapor blockage in the gauge chamber, a first vent extends from the bottom of the gauge chamber to the low collection point of the tank and a second vent extends from the top of the gauge chamber to the high collection point of the tank.Type: GrantFiled: September 14, 2005Date of Patent: February 26, 2008Assignee: Honda Motor Co., Ltd.Inventor: Kenichi Goto
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Publication number: 20070234795Abstract: The aircraft tank and gauge system of the present invention provides a fuel tank with a gauge chamber located generally aligned with the tank center of gravity and that has a general vertical orientation when the aircraft is level. The gauge chamber extends from the top of the tank to a height generally equivalent to a high collection point on the tank and/or extends from the bottom of the tank to a height generally equivalent to a low collection point on the tank. As the aircraft pitches and rolls, fuel within a complex-shaped tank, will be measured by a sensor in the gauge chamber. In order to prevent any type of vapor blockage in the gauge chamber, a first vent extends from the bottom of the gauge chamber to the low collection point of the tank and a second vent extends from the top of the gauge chamber to the high collection point of the tank.Type: ApplicationFiled: September 14, 2005Publication date: October 11, 2007Applicant: Honda Motor Co., Ltd.Inventor: Kenichi Goto
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Publication number: 20070148512Abstract: A fuel cell system that has a fuel cell stack with a plurality of laminated cells, each of the laminated cells includes an electrolyte membrane interposed between a fuel electrode receiving a supply of fuel gas and an oxidizing agent electrode receiving a supply of oxidizing agent gas. A fuel gas supply device supplies a fuel gas to the fuel electrode. An oxidizing agent gas supply device supplies an oxidizing agent gas to the oxidizing agent electrode. A fuel electrode side discharge system discharges a discharge gas from the fuel electrode to an external. A circulation device re-circulates the discharge gas discharged from the fuel electrode into an upstream side of the fuel electrode. A voltage limit device limits a voltage across the fuel cell stack by drawing a current from the fuel cell stack at a time of an activation of the fuel cell system.Type: ApplicationFiled: December 27, 2006Publication date: June 28, 2007Applicant: Nissan Motor Co., Ltd.Inventors: Kenichi Goto, Ryoichi Shimoi, Takashi Iimori, Tetsuya Kamihara
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Publication number: 20070102573Abstract: The ice prevention system of the present invention utilizes, in combination, a de-ice subsystem and anti-ice subsystem in a new configuration on an aircraft with engines located behind its wings. Depending on the vertical location of the engines with respect to the wings, the anti-ice subsystem is configured on an upper or lower portion of a leading edge of the wings. If the engine is located above the wing, the anti-ice system is configured only on a section of the wing aligned with the engine and only on the upper portion of the leading edge. If the engine is located below the wing, the placement of anti-ice system is reversed. The de-ice subsystem is configured on the opposite portion of the leading edge adjacent to the anti-ice subsystem and on the remainder of the leading edge of the wing.Type: ApplicationFiled: October 21, 2005Publication date: May 10, 2007Applicant: Honda Motor Co., Ltd.Inventor: Kenichi Goto
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Patent number: 7197359Abstract: The present invention relates to compositions for electroporation which are useful in elevating percutaneous absorbability of drugs, etc. By controlling electrolyte concentration of compositions for electroporation so as to make an osmotic pressure of the compositions not more than a physical osmotic pressure, the percutaneous absorbability of drugs can be elevated.Type: GrantFiled: April 6, 2000Date of Patent: March 27, 2007Assignee: Pola Chemical Industries Inc.Inventors: Yoshihiro Tokudome, Koji Owaku, Kenichi Goto, Kenji Sugibayashi
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Patent number: 7089053Abstract: The present invention relates to compositions for electroporation which are useful in elevating a percutaneous absorbability of drugs, etc. By adding polyhydric alcohols to compositions for electroporation, the percutaneous absorbability of drugs is elevated.Type: GrantFiled: April 6, 2000Date of Patent: August 8, 2006Assignee: Pola Chemical Industries IncInventors: Yoshihiro Tokudome, Koji Owaku, Kenichi Goto, Kenji Sugibayashi
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Publication number: 20060006420Abstract: A semiconductor device includes a stress-accumulating insulation film formed on a semiconductor substrate so as to cover a gate electrode and sidewall insulation films, the stress-accumulating insulation film accumulating a stress therein, wherein the stress-accumulating insulation film including a channel part covering the gate electrode and the sidewall insulation films and outer parts extending outside of the channel part, the stress-accumulating insulation film having an increased thickness in the channel part as compared with the outer part.Type: ApplicationFiled: December 27, 2004Publication date: January 12, 2006Applicant: FUJITSU LIMITEDInventor: Kenichi Goto
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Publication number: 20050236667Abstract: A p-channel MOS transistor capable of lowering the height of a gate electrode, suppressing penetration of boron through a gate insulating film, and reducing a source/drain parasitic capacitance. A method for manufacturing a semiconductor device comprises the steps of: (a) forming a gate insulating film on each surface of active regions including an n-type active region; (b) depositing a poly-Si gate electrode layer on the gate insulating film; (c) implanting amorphousizing ions, Ge or Si, to transform an upper portion of the gate electrode layer into amorphous phase; (d) patterning the gate electrode layer to form a gate electrode; (e) forming side wall spacers on side walls of the gate electrode at a temperature not crystallizing the amorphous layer; and (f) implanting p-type impurity ions, B, into the n-type active region by using as a mask the gate electrode and the side wall spacers, to form high concentration source/drain regions.Type: ApplicationFiled: June 30, 2005Publication date: October 27, 2005Applicant: FUJITSU LIMITEDInventors: Kenichi Goto, Hiroshi Morioka, Manabu Kojima, Kenichi Okabe
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Publication number: 20050214604Abstract: A fuel cell system includes a fuel cell stack comprising an anode (fuel electrode) and a cathode (oxidizer electrode), and a system startup run is conducted at the system startup to bring the fuel cell stack into a power extractable state (idle state).Type: ApplicationFiled: March 11, 2005Publication date: September 29, 2005Inventors: Kenichi Goto, Tetsuya Kamihara
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Patent number: 6881653Abstract: A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.Type: GrantFiled: December 22, 2003Date of Patent: April 19, 2005Assignee: Fujitsu LimitedInventors: Manabu Kojima, Kenichi Goto, Hiroshi Morioka, Kenichi Okabe
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Patent number: 6878548Abstract: The present invention is a composition for percutaneous administration suitable for electroporation. Percutaneous absorption of a drug and so forth in a composition for electroporation can be promoted by adding alkaline earth metal ions to the composition.Type: GrantFiled: February 19, 2002Date of Patent: April 12, 2005Assignee: Pola Chemical Industries Inc.Inventors: Yoshihiro Tokudome, Toshihiro Hinokitani, Kenichi Goto, Kenji Sugibayashi, Koji Owaku, Yasunori Inaoka
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Patent number: 6815759Abstract: A tunneling insulating film is formed on the partial surface area of a semiconductor substrate. A floating gate electrode is formed on the tunneling insulating film. A gate insulating film covers the side wall of the floating gate electrode and a partial surface area of the semiconductor substrate on both sides of the floating gate electrode. A first control gate electrode is disposed on the gate insulating film over the side wall of the floating gate electrode and over a partial surface area of the semiconductor substrate on both sides of the floating gate electrode. A pair of impurity doped regions is formed in a surface layer of the semiconductor substrate on both sides of a gate structure including the floating gate structure and first control gate structure.Type: GrantFiled: December 1, 2000Date of Patent: November 9, 2004Assignee: Fujitsu LimitedInventors: Naoto Horiguchi, Tatsuya Usuki, Kenichi Goto
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Patent number: 6795940Abstract: The diagnostic testing of a ROM is executed by a ROM diagnostic testing apparatus in which an ordinary ROM diagnostic testing program and a high-speed ROM diagnostic testing program are prepared and stored in separate storing region of the ROM, and the ordinary ROM diagnostic testing program executes the diagnosing of the entire storing region of the ROM while the high-speed ROM diagnostic testing program executes one specified storing region of the ROM that concentratedly stores the OS, which is a JOB calling portion, the library, which is a general-purpose subroutine, the ordinary ROM diagnostic testing program, and the sum/parity of the program.Type: GrantFiled: September 18, 2001Date of Patent: September 21, 2004Assignee: Nissan Motor Co., Ltd.Inventor: Kenichi Goto
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Publication number: 20040132240Abstract: A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.Type: ApplicationFiled: December 22, 2003Publication date: July 8, 2004Applicant: FUJITSU LIMITEDInventors: Manabu Kojima, Kenichi Goto, Hiroshi Morioka, Kenichi Okabe
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Patent number: 6736354Abstract: An airplane fuel supply system includes a wing fuel tank that is formed from a wing tip fuel tank having a wing tip fuel pump; a central fuel tank having a central fuel pump; and a wing root fuel tank having a wing root fuel pump. Fuel movement from the wing tip fuel tank to the central fuel tank is allowed by a flapper valve, and fuel movement from the central fuel tank to the wing root fuel tank is allowed by another flapper valve. When the fuel delivery volume of the wing tip fuel pump is represented by Vt, the fuel delivery volume of the central fuel pump is represented by Vc, the fuel delivery volume of the wing root fuel pump is represented by Vr, and the fuel delivery volume from a collector tank to the engine is represented by Ve, the fuel delivery volumes Vt, Vc, Vr, and Ve are set so as to satisfy the relationships Vr>Ve, Vt+Vc>Ve, and Vc<Ve. This can minimize the size of the fuel pumps for supplying fuel from the airplane wing fuel tank to the engine.Type: GrantFiled: February 3, 2003Date of Patent: May 18, 2004Assignee: Honda Giken Kogyo Kabushiki KaishaInventors: Kenichi Goto, Toshiaki Fujii
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Publication number: 20040071763Abstract: The present invention is a composition for percutaneous administration suitable for electroporation. Percutaneous absorption of a drug and so forth in a composition for electroporation can be promoted by adding alkaline earth metal ions to the composition.Type: ApplicationFiled: August 13, 2003Publication date: April 15, 2004Inventors: Yoshihiro Tokudome, Toshihiro Hinokitani, Kenichi Goto, Kenji Sugibayashi, Koji Owaku, Yasunori Inaoka