Abstract: The present invention relates to percutaneous sorbefacients for electroporation consisting of monoterpene and being useful in elevating percutaneous absorbability of drugs, etc. By adding these percutaneous sorbefacients to compositions for electroporation, the percutaneous absorbability of drugs can be elevated.

Abstract: A vehicle is provided including a high-voltage battery for a motor/generator power source, a low-voltage battery for electrical loads, an inverter for controlling the motor/generator, sensors which detect a condition of the high-voltage battery, a rotation speed of the engine, a vehicle speed, and a depression of an accelerator pedal, and a microprocessor. The microprocessor is programmed to compute a state of charge (SOC) of the high-voltage battery, compute a degree of deterioration of the high-voltage battery, control a current generated by the motor/generator so that the SOC of the high-voltage battery coincides with a target SOC, vary the target SOC according to the degree of deterioration of the high-voltage battery, determine whether or not the vehicle is decelerating, and set the target SOC to the low target SOC when the vehicle is not decelerating and to the high target SOC when the vehicle is decelerating.

Abstract: An airplane fuel supply system includes a wing fuel tank that is formed from a wing tip fuel tank having a wing tip fuel pump; a central fuel tank having a central fuel pump; and a wing root fuel tank having a wing root fuel pump. Fuel movement from the wing tip fuel tank to the central fuel tank is allowed by a flapper valve, and fuel movement from the central fuel tank to the wing root fuel tank is allowed by another flapper valve. When the fuel delivery volume of the wing tip fuel pump is represented by Vt, the fuel delivery volume of the central fuel pump is represented by Vc, the fuel delivery volume of the wing root fuel pump is represented by Vr, and the fuel delivery volume from a collector tank to the engine is represented by Ve, the fuel delivery volumes Vt, Vc, Vr, and Ve are set so as to satisfy the relationships Vr>Ve, Vt+Vc>Ve, and Vc<Ve. This can minimize the size of the fuel pumps for supplying fuel from the airplane wing fuel tank to the engine.

Abstract: A gate electrode is formed in a partial area of the surface of a semiconductor substrate. Impurities of a first conductive type are implanted into the semiconductor substrate in areas on both sides of the gate electrode, by using the gate electrode as a mask. The implanted impurities are activated by applying a laser beam to the surface of the semiconductor substrate. Impurities to be used for threshold voltage control are implanted into the surface layer of the semiconductor substrate under the gate electrode, after the laser beam is applied. The impurities for threshold voltage control are activated by heating the semiconductor substrate. A semiconductor device is provided having a low parasitic resistance of source/drain regions and a desired threshold voltage hard to be lowered.

Abstract: The present invention enables reliable shift to a fail-safe processing upon detection of failure by RAM diagnosis. To this end, the diagnosis result of the RAM diagnosis is doubly stored, as flags, into mutually different two addresses of the RAM; and a fail-safe processing is conducted based on the doubly stored diagnosis result flags when at least one of the flags indicates existence of failure. Otherwise, the diagnosis result of the RAM diagnosis is stored, as a flag, into a predetermined register; and a fail-safe processing is conduced based on the diagnosis result flag stored in the register such that the fail-safe processing is conducted when the flag indicates existence of failure.

Abstract: A hybrid vehicle is provided with an internal combustion engine as a power source and an electric motor. The electric motor is used to charge the high-voltage battery. Charge/discharge control of the high-voltage battery and an idle-stop control can be performed, taking into account battery deterioration. For this purpose, the internal resistance R is detected as a degree of deterioration in the high-voltage battery. When the internal resistance R is less than a predetermined resistance R1, a threshold value of a state of charge (SOC) of the high-voltage battery, SOCa above which the idle stop operation permitted is set, fitted to an initial condition wherein the high-voltage battery has not undergone deterioration. On the other hand, when the internal resistance R is greater than or equal to the predetermined value R1, the threshold value tSOCa is varied to higher value. Further, a target SOC of the high-voltage battery is varied in response to the degree of deterioration of the battery.

Abstract: When a vehicle is decelerating a controller of a motor-generator (2) computes a target charging current according to a charge state of a high voltage battery by a target charging current computing unit (23), and limits this current by a first limiter (24) having a limiter value. An electrical load current supplied to vehicle-mounted electrical loads is computed by an electrical load current detecting unit (27). A target generation current produced by the motor-generator (2) is computed by adding the target charging current and electrical load current, by a target generation current detecting unit (28, 30). This computed value is limited by a second limiter (31) having a limiter value which varies according to an engine rotation speed, ON/OFF state of an air-conditioner and speed ratio.

Abstract: The closed end 11b of the Sleeve 11 and the shaft end 12b are made to be point-contacted through the ball 14. By this point contact, while allowing the sleeve 11 and the shaft 12 to rotate, the pressurization in the axial direction between the sleeve and the shaft can be received. Further, by giving this pressurization, the inner ring 13a of the bearing 13 is displaced toward the axial direction (downward in FIG. 1) interposing the ball 13b to absorb the play of the bearing 13. Accordingly, even though merely one bearing 13 is used, the sleeve 11 and the shaft 12 are prevented from being deflected, to obtain the pivot assembly 10 having a necessary rotation precision.

Abstract: The diagnostic testing of a ROM is executed by a ROM diagnostic testing apparatus in which an ordinary ROM diagnostic testing program and a high-speed ROM diagnostic testing program are prepared and stored in separate storing region of the ROM, and the ordinary ROM diagnostic testing program executes the diagnosing of the entire storing region of the ROM while the high-speed ROM diagnostic testing program executes one specified storing region of the ROM that concentratedly stores the OS, which is a JOB calling portion, the library, which is a general-purpose subroutine, the ordinary ROM diagnostic testing program, and the sum/parity of the program.

Abstract: A method of manufacturing a semiconductor device having shallow p-n junctions and silicide regions, capable of meeting both requirements of a high annealing temperature and a low annealing temperature. A lamination of two films made of materials having different etching characteristics is formed on the surface of a silicon substrate, covering an insulated gate electrode structure. The upper film is anisotropically etched to form side wall spacers. Impurity ions are implanted into a surface layer of the silicon substrate and sufficiently activated to a first level. The lower film is removed by using as a mask the side wall spacers, and a metal film capable of being silicided is deposited to perform a first silicidation reaction. The insulated gate electrode is exposed and impurity ions are implanted shallowly in the surface layer of the silicon substrate.

Abstract: A control arrangement for an internal combustion engine which includes a fuel supply system, an air/fuel ratio control system, an abnormality diagnoser which diagnoses a possible abnormality in the fuel supply system, when the pressure of the pressurized fuel in the fuel supply system detected by a fuel pressure senor exceeds predetermined upper and lower limits determined by a control duty for an electrically controlled pressure regulator, and an abnormal element decider which decides an abnormality either in the fuel pressure sensor or in the electrically controlled pressure regulator based on an amount representing an air/fuel ratio status including the actual air/fuel ratio and the air/fuel ratio feed back control amount extracted from the air/fuel ratio control system for the internal combustion engine, when the abnormality diagnoser diagnoses an abnormality in the fuel supply system.

Abstract: A tunneling insulating film is formed on the partial surface area of a semiconductor substrate. A floating gate electrode is formed on the tunneling insulating film. A gate insulating film covers the side wall of the floating gate electrode and a partial surface area of the semiconductor substrate on both sides of the floating gate electrode. A first control gate electrode is disposed on the gate insulating film over the side wall of the floating gate electrode and over a partial surface area of the semiconductor substrate on both sides of the floating gate electrode. A pair of impurity doped regions is formed in a surface layer of the semiconductor substrate on both sides of a gate structure including the floating gate structure and first control gate structure.

Abstract: A preparation process of a fluorine substituted aromatic compound comprising reacting an alkali metal or alkali earth metal salt of an aromatic compound having a hydroxy group with an organic fluorinating agent is disclosed. As a representative fluorinating agent, a bis-dialkylamino-difluoromethane compound, for example, 2,2′-difluoro-1,3-dimethylimidazolidine, is exemplified. According to the process, an industrially useful fluorinated aromatic compound, for example, a fluorobenzene, a fluorine substituted benzophenone, a fluorine substituted diarylsulfone can be prepared with ease in economy without specific equipment.

Abstract: The invention has disclosed a trifluoroacetoxylation agent and a preparation process of the agent, which is safe and ease to handle, very useful in industry, and represented by the formula (1); wherein R1 to R4 are a substituted or unsubstituted, saturated or unsaturated alkyl group or a substituted or unsubstituted aryl group and can be the same or different, R1 and R2 or R3 and R4 can bond to form a ring containing a nitrogen atom or a nitrogen atom and other hetero atoms, and R1 and R3 can bond to form a ring containing a nitrogen atom or a nitrogen atom and other hetero atoms.

Abstract: A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5×1015 cm−2; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film.

Abstract: A fail-safe system for an internal combustion engine mounted on an automotive vehicle. The fail-safe system comprises a device for causing the engine to generate an engine power output. A detector is provided to detect an operational condition of the causing device so as to generate a detection signal representative of the operational condition.

Abstract: A preparation process of an acetylene derivative comprising reacting a compound having a skeleton represented by the formula (1): ##STR1## in the molecular formula with a compound represented by the formula (2): ##STR2## wherein R.sup.1, R.sup.2 R.sup.3 and R.sup.4 are individually an alkyl group having 1 to 6 carbon atoms and can be the same or different, R.sup.1 and R.sup.3 can bond each other to form a ring, and R.sup.1 and R.sup.2 or R.sup.3 and R.sup.4 can be bond each other to form one or two heterocyclic rings: or with a compound represented by the formula (3): wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are the same as in the formula (2), and X.sub.1 is a ##STR3## chlorine, bromine or iodine atom.

Abstract: A diagnostic system for a fuel system of an internal combustion engine such as direct-injection gasoline engine monitors a pressure deviation of a actual fuel pressure sensed by a fuel pressure sensor from a desired fuel pressure in a feedback fuel pressure control, and thereby detects abnormality in the fuel system. When the pressure deviation continues to be outside a normal range, a diagnostic controller commands engine operation in a homogeneous stoichiometric combustion mode, and monitors a feedback correction quantity in a feedback stoichiometric air fuel control during the engine operation in the homogeneous stoichiometric combustion mode. The controller attributes the abnormality to the fuel pressure sensor if the feedback correction quantity of the air fuel ratio is fixed to an upper limit or a lower limit.

Abstract: A semiconductor device is produced by a method which comprises forming a conductor pattern in or on a semiconductor layer, covering the surface of the conductor pattern with an antioxidant conductor layer, forming a first insulating layer on the semiconductor layer, forming a lower electrode of a capacitor on the first insulating layer, forming a dielectric layer of an oxygen-containing material on the lower electrode, forming an upper electrode on the dielectric layer, sequentially patterning the upper electrode, the dielectric layer, and the lower electrode in the shape of a capacitor, forming a second insulating layer covering the semiconductor layer, the antioxidant conductor layer, and the capacitor, patterning the second insulating layer thereby simultaneously forming a first opening and a second opening on the upper electrode and the conductor pattern, heating the interiors of the first opening and the second opening and the upper electrode in an oxygen-containing atmosphere, forming a conductor layer

Abstract: A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.