Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: A door supporting structure includes a cabinet having an opening portion, a door, and first and second supporting shafts provided on the door, the second supporting shaft having a contact face on a protruding end. The door supporting structure further includes bearings disposed on the cabinet, each of the bearings having a shaft inserting portion in which the first and second supporting shaft is inserted respectively, and an elastic member disposed on the first supporting shaft, the elastic member exerting an urging force and a rotation force on the door, and a positioning portion disposed in the vicinity of the contact face. The elastic member is interposed between the door and one of the bearings to urge the door along the shaft center so that the contact face passed through the other bearing is in contact with the positioning portion disposed in the vicinity of the other bearing.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: A shield plate mounting apparatus is disclosed which mounts a shield plate 4 on a casing 3 of a recording/reproducing apparatus 2 formed to be integral with a television receiver. In this shield plate mounting apparatus, a plurality of projection portions 7a to 7c are provided on the casing 3 at predetermined angular intervals to project therefrom. A slip-off preventing piece 8 is formed to be integral with each of the projection portions 7a and 7b and as to bend from the top end of each of the portions 7a and 7b in a direction nearly perpendicular thereto. A plurality of kinds of mounting angles &agr; of the shield plate 4 are set, and a plurality of through holes 9a to 9c respectively facing the projection portions 7a to 7c are pierced through the shield plate 4 correspondingly to each of the kinds of the mounting angles &agr;.

Abstract: A method for supporting recovery processing from a failed storage device in a computer system which also includes a processing unit. The processing unit executes a batch job including plural jobs. Transition history information which includes information of executed jobs and an operated on data-set is obtained during execution of the batch job. When performing recovery processing upon detection of a failed storage device, the transition history information is inspected. Jobs that have performed an output operation to the failed storage device are extracted as direct re-execution jobs. Further, jobs on which a data-set operation is effected by the direct re-execution jobs are extracted as indirect re-execution jobs. Still further, a data-set and generation of a data-set to be restored, deletion of a data-set, and a method and timing thereof are determined. Then, information used for supporting the recovery operation is edited and the edited information is output.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: A method is provided for supporting recovery processing from a failure of a storage device in a computer system. The computer system includes a processing unit and a storage device, and in which a batch job consisting of a plurality of jobs is executed on said processing unit. Transition history information which includes information concerned with executed jobs and information concerned with an operated on data-set is obtained during execution of a batch job. At the time of recovery processing in the event of a storage device failure, the transition history information is inspected. Jobs that have performed an output operation to a failed storage device, re-execution of which is required for recovery processing, are extracted as direct re-execution jobs. Further, jobs on which a data-set operation is effected by the direct re-execution jobs are extracted as indirect re-execution jobs. Then, a transition of the data-set operation performed in a batch job is inspected.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: A semiconductor device comprises a semiconductor substrate; a first insulating film overlying a surface of the semiconductor substrate, an upper surface of the first insulating film being nitrided; a first copper-embedded interconnection embedded in the first insulating film, and which first copper-embedded interconnection contains copper as a main component; a copper nitride film overlying an upper surface of the first copper-embedded interconnection; a cap insulating film overlying an upper surface of the first insulating film and an upper surface of the copper nitride film; and a second insulting film overlying the cap insulating film.

Abstract: A head lamp device includes a structure in which a discharge lamp has a discharge bulb and a reflector of a substantially hemispheric shape arranged in an upper part of a housing. A filament including a filament bulb and a reflector of a substantially hemispheric shape is arranged in a lower part of the housing. The front opening of the lamp housing is covered by a front lens. The discharge bulb can generate two to three times as much luminous flux as a conventional filament bulb. As a result, it is possible to reduce the size of the discharge bulb as compared to the filament bulb. This makes it possible to reduce the overall size of the head lamp device.

Abstract: A head lamp device includes a structure in which a discharge lamp has a discharge bulb and a reflector of a substantially hemispheric shape arranged in an upper part of a housing. A filament including a filament bulb and a reflector of a substantially hemispheric shape is arranged in a lower part of the housing. The front opening of the lamp housing is covered by a front lens. The discharge bulb can generate two to three times as much luminous flux as a conventional filament bulb. As a result, it is possible to reduce the size of the discharge bulb as compared to the filament bulb. This makes it possible to reduce the overall size of the head lamp device.

Abstract: A method is provided for supporting recovery processing from a failure of a storage device in a computer system. The computer system includes a processing unit and a storage device, and in which a batch job consisting of a plurality of jobs is executed on said processing unit. Transition history information which includes information concerned with executed jobs and information concerned with an operated on data-set is obtained during execution of a batch job. At the time of recovery processing in the event of a storage device failure, the transition history information is inspected. Jobs that have performed an output operation to a failed storage device, re-execution of which is required for recovery processing, are extracted as direct re-execution jobs. Further, jobs on which a data-set operation is effected by the direct re-execution jobs are extracted as indirect re-execution jobs. Then, a transition of the data-set operation performed in a batch job is inspected.

Abstract: A head lamp device includes a structure in which a discharge lamp has a discharge bulb and a reflector of a substantially hemispheric shape arranged in an upper part of a housing. A filament including a filament bulb and a reflector of a substantially hemispheric shape is arranged in a lower part of the housing. The front opening of the lamp housing is covered by a front lens. The discharge bulb can generate two to three times as much luminous flux as a conventional filament bulb. As a result, it is possible to reduce the size of the discharge bulb as compared to the filament bulb. This makes it possible to reduce the overall size of the head lamp device.

Abstract: A method is provided for supporting recovery processing from a failure of a storage device in a computer system. The computer system includes a processing unit and a storage device, and in which a batch job consisting of a plurality of jobs is executed on said processing unit. Transition history information which includes information concerned with executed jobs and information concerned with an operated on data-set is obtained during execution of a batch job. At the time of recovery processing in the event of a storage device failure, the transition history information is inspected. Jobs that have performed an output operation to a failed storage device, re-execution of which is required for recovery processing, are extracted as direct re-execution jobs. Further, jobs on which a data-set operation is effected by the direct re-execution jobs are extracted as indirect re-execution jobs. Then, a transition of the data-set operation performed in a batch job is inspected.

Abstract: A headlamp cleaner for a motorcycle includes a frame enclosing a headlamp lens. A cleaning nozzle is attached to an upper half of the frame. The nozzle ejects a cleaning agent downwardly over the lens against wind blowing upward during running of the motorcycle. Therefore, it is possible to minimize an amount of the cleaning agent scattered by the wind. Further, vehicle state detecting units are connected to a controller for the headlamp cleaner. No cleaning agent will be ejected, when the vehicle is detected to be in a condition, or state, where the cleaning agent is likely to disperse. The controller, in combination with the downwardly directed nozzle, is thus unlikely to disperse cleaning fluid toward a windscreen or rider of the motorcycle.