Abstract: A display device including: a display unit including a plurality of sub-pixels; a touch sensing unit formed on the display unit and configured to sense a touch position; a code arrangement unit disposed on the touch sensing unit, wherein the code arrangement unit includes code patterns; and a surface protection cover disposed on the code arrangement unit, wherein a distance between the code patterns and a reflective surface formed below the code patterns is equal to or less than 55% of one width of one of the code patterns.

Abstract: The present application relates to a method for producing a reassortant Reoviridae virus and a vector library for the same, and provides: a method for producing a reassortant Reoviridae virus by using a cell line into which an RNA polymerase is introduced and an expression vector library according to an aspect; a reassortant Reoviridae virus produced by the method; and an expression vector library for producing reassortant rotavirus.

Abstract: Disclosed are an autonomously traveling mobile robot and a traveling control method thereof, which can control the traveling of the mobile robot according to a first traveling mode in which the mobile robot travels by following obstacles located around the mobile robot or a second traveling mode in which the mobile robot travels in consideration of a positional relation with an existing traveling trajectory through which the mobile robot has already traveled, and generate candidate spots where the mobile robot can travel while the mobile robot travels along the traveling trajectory to implement a spiral cleaning pattern.

Abstract: The present invention relates to: acid-resistant yeast to which lactic acid productivity is imparted, and in which the conversion of pyruvate into acetaldehyde is inhibited and, consequently, the ethanol production pathway is inhibited; and a method for producing lactic acid by using same.

Abstract: A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

Abstract: A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.

Abstract: A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.

Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

Abstract: An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer st

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.

Abstract: A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure directly on a sidewall of the gate structure, and a source/drain layer on a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a silicon oxycarbonitride (SiOCN) pattern and a silicon dioxide (SiO2) pattern sequentially stacked.

Abstract: A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.