Patents by Inventor Ki-yeon Park

Ki-yeon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12195331
    Abstract: An embodiment of the present disclosure relates to an apparatus for synthesizing nanoparticles by irradiating, with an electron beam, a nanoparticle aqueous solution in a reaction vessel provided inside a shielding chamber, and more particularly, to an apparatus for synthesizing nanoparticles, which is capable of preventing radiation generated in a shielding chamber from leaking out, and facilitating maintenance and repair.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: January 14, 2025
    Assignee: KORENS RTX Co., Ltd.
    Inventors: Jong Min Shin, Dae Soo Yang, Ki Baek Song, Yeong Cheol Yoon, Hyean Yeol Park, So Yeon Lim
  • Patent number: 12195446
    Abstract: The present invention provides heterocyclic compounds, the stereoisomer thereof, the enantiomer thereof, or the pharmaceutically acceptable salt, which are capable of modulating the activity of Mer receptor tyrosine kinase (MERTK). This invention also provides pharmaceutical compositions thereof, methods to prepare the said compounds, and the use of such compounds as a medicament. The present invention is directed to MERTK inhibitory compounds with marked potency, thereby having an outstanding potential for a pharmaceutical intervention of cancer and any other diseases related to MERTK dysregulation.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: January 14, 2025
    Assignee: DONG-A SOCIO HOLDINGS CO., LTD.
    Inventors: Myeong-Seop Kim, Sumin Kim, Jin Kwan Kim, Hadong Kim, Ki Moon Ryu, Seong Jin Park, Taesun Park, Joon-Ho Sheen, Taeyoung Yoon, Mi Yeon Jang
  • Publication number: 20250003278
    Abstract: A sliding-door drum assembly capable of being assembled in a facilitative manner by enabling a cable to be elastically supported and to maintain an appropriate tensile force after being assembled is proposed. The sliding-door drum assembly includes: a cable pulling a sliding door rotatably installed on a vehicle to slide the sliding door; and a drum around which the cable is wound; a drum adapter connected to an output shaft of a drive unit. The drum is installed on the drum adapter. Additionally, the sliding-door drum assembly may include an elastic member elastically supporting the drum against the drum adapter.
    Type: Application
    Filed: November 8, 2023
    Publication date: January 2, 2025
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, PYEONG HWA AUTOMOTIVE CO., LTD.
    Inventors: Hyung-In Yun, So-Yeon Park, Jong-Han Woo, Ki-Hwan Jeong, Soo-Chul Lee, Moon-Gyu Choi, Seong-Tae Hong
  • Publication number: 20250003279
    Abstract: A sliding-door drive unit for a vehicle is capable of transferring or blocking drive power required to pull or push a cable to open or close a sliding door. The sliding-door drive unit includes a worm wheel rotatable by a drive motor, a stationary disc coupled to an output shaft, and a movable disc rotatably installed between the worm wheel and the stationary disc along an axial direction of the output shaft. The movable disc is engaged with the worm wheel and is selectively engaged with the stationary disc.
    Type: Application
    Filed: November 6, 2023
    Publication date: January 2, 2025
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, PYEONG HWA AUTOMOTIVE CO., LTD.
    Inventors: Hyung-In Yun, So-Yeon Park, Jong-Han Woo, Ki-Hwan Jeong, Soo-Chul Lee, Moon-Gyu Choi, Seong-Tae Hong
  • Publication number: 20240402867
    Abstract: A roll map of an electrode coating process includes a roll map bar and a representation part. The roll map bar is displayed on a screen in synchronization with movement of an electrode between an unwinder and a rewinder while being coated with an electrode slurry in a roll-to-roll state. The roll map bar is displayed in the form of a bar by simulating the electrode in the roll-to-roll state. The representation part is configured to visually show either one of or both quality-related and defect-related acquired data associated with the electrode coating process. The acquired data is shown at a certain location on the roll map bar corresponding to a location in the electrode at which the data is measured. A roll map of an electrode coating process is generated by a process. A roll map of an electrode coating process is generated by a system.
    Type: Application
    Filed: August 12, 2024
    Publication date: December 5, 2024
    Inventors: Jun Hyo SU, Jong Seok PARK, Dong Yeop LEE, Ki Deok HAN, Byoung Eun HAN, Seung HUH, Ju Yeon PARK
  • Publication number: 20240402837
    Abstract: A display system includes an optical interface. The display system includes an optical pen outputting infrared light. A display device acquires information on a user input based on the infrared light provided by the optical pen. The display device includes a panel layer and a code layer disposed on the panel layer. The code layer includes an optical pattern absorbing at least a portion of the infrared light provided by the optical pen. The optical pen includes a pen body and a nib disposed in the pen body. The nib includes a nib head part including a first end portion and an opposite second end portion. A nib body part is connected to the nib head part. The first end portion forms a curved surface.
    Type: Application
    Filed: December 5, 2023
    Publication date: December 5, 2024
    Inventors: Gil Yeong PARK, Hee Young LEE, Da Som GU, Ki Jun ROH, Sung Guk AN, So Yeon HAN
  • Patent number: 12157902
    Abstract: Disclosed are a recombinant acid-resistant yeast having lactic acid-producing ability and suppressed glycerol production and a method of preparing lactic acid using the same. More particularly, disclosed are a recombinant acid-resistant yeast into which a gene involved in lactic acid production is introduced and in which a gene involved in glycerol production is deleted or attenuated, and a method of preparing lactic acid using the same. When producing lactic acid using the recombinant acid-resistant yeast, the production of lactic acid is maintained while the production of glycerol is reduced, so crosslinking by glycerol can be suppressed in the oligomerization reaction for conversion to lactide, and thus the conversion yield of lactic acid to lactide can be increased.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: December 3, 2024
    Assignee: SK Innovation Co., Ltd.
    Inventors: Jae Yeon Park, Ki Sung Lee, Tae Young Lee
  • Patent number: 12135475
    Abstract: A display device includes a display layer emitting light. An infrared reflective layer is disposed on the display layer. An optical pattern is disposed on the infrared reflective layer. The optical pattern absorbs at least a portion of infrared light.
    Type: Grant
    Filed: July 12, 2023
    Date of Patent: November 5, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hee Young Lee, Da Som Gu, Ki Jun Roh, Gil Yeong Park, Sung Guk An, So Yeon Han
  • Publication number: 20240338090
    Abstract: A display device including: a display unit including a plurality of sub-pixels; a touch sensing unit formed on the display unit and configured to sense a touch position; a code arrangement unit disposed on the touch sensing unit, wherein the code arrangement unit includes code patterns; and a surface protection cover disposed on the code arrangement unit, wherein a distance between the code patterns and a reflective surface formed below the code patterns is equal to or less than 55% of one width of one of the code patterns.
    Type: Application
    Filed: January 10, 2024
    Publication date: October 10, 2024
    Inventors: Da Som GU, Gil Yeong PARK, Ki Jun ROH, Sung Guk AN, Hee Young LEE, So Yeon HAN
  • Publication number: 20240309336
    Abstract: The present application relates to a method for producing a reassortant Reoviridae virus and a vector library for the same, and provides: a method for producing a reassortant Reoviridae virus by using a cell line into which an RNA polymerase is introduced and an expression vector library according to an aspect; a reassortant Reoviridae virus produced by the method; and an expression vector library for producing reassortant rotavirus.
    Type: Application
    Filed: June 24, 2022
    Publication date: September 19, 2024
    Inventors: Ki Weon SEO, Tae Woo KWON, Seo Yeon JUNG, Min Jung PARK, Kun Se LEE, Hyun Joo LEE
  • Patent number: 12089793
    Abstract: Disclosed are an autonomously traveling mobile robot and a traveling control method thereof, which can control the traveling of the mobile robot according to a first traveling mode in which the mobile robot travels by following obstacles located around the mobile robot or a second traveling mode in which the mobile robot travels in consideration of a positional relation with an existing traveling trajectory through which the mobile robot has already traveled, and generate candidate spots where the mobile robot can travel while the mobile robot travels along the traveling trajectory to implement a spiral cleaning pattern.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: September 17, 2024
    Assignee: YUJIN ROBOT CO., LTD.
    Inventors: Seong Ju Park, Gi Yeon Park, Ki San Hwang, Seung Ho Jang
  • Patent number: 12084665
    Abstract: The present invention relates to: acid-resistant yeast to which lactic acid productivity is imparted, and in which the conversion of pyruvate into acetaldehyde is inhibited and, consequently, the ethanol production pathway is inhibited; and a method for producing lactic acid by using same.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: September 10, 2024
    Assignee: SK Innovation Co., Ltd.
    Inventors: Jae Yeon Park, Tae Young Lee, Ki Sung Lee
  • Patent number: 10797160
    Abstract: A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: October 6, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun-Jun Sim, Won-Oh Seo, Sun-Jung Kim, Ki-Yeon Park
  • Patent number: 10685957
    Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: June 16, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Hyun Choi, Yong-Suk Tak, Gi-Gwan Park, Bon-Young Koo, Ki-Yeon Park, Won-Oh Seo
  • Patent number: 10541127
    Abstract: A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: January 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-suk Tak, Gi-gwan Park, Jin-bum Kim, Bon-young Koo, Ki-yeon Park, Tae-jong Lee
  • Patent number: 10529555
    Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: January 7, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-suk Tak, Tae-jong Lee, Bon-young Koo, Ki-yeon Park, Sung-hyun Choi
  • Patent number: 10460927
    Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: October 29, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-suk Tak, Tae-jong Lee, Bon-young Koo, Ki-yeon Park, Sung-hyun Choi
  • Publication number: 20190287797
    Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.
    Type: Application
    Filed: May 24, 2019
    Publication date: September 19, 2019
    Inventors: Yong-suk TAK, Tae-jong LEE, Bon-young KOO, Ki-yeon PARK, Sung-hyun CHOI
  • Patent number: 10403739
    Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: September 3, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tea Won Kim, Yong Suk Tak, Ki Yeon Park
  • Publication number: 20190237563
    Abstract: A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.
    Type: Application
    Filed: October 2, 2018
    Publication date: August 1, 2019
    Inventors: HYUN-JUN SIM, WON-OH SEO, SUN-JUNG KIM, KI-YEON PARK