Patents by Inventor Kiyohiko Maeda
Kiyohiko Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10840094Abstract: There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.Type: GrantFiled: December 27, 2018Date of Patent: November 17, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Kiyohiko Maeda, Masato Terasaki, Yasuhiro Megawa, Takahiro Miyakura, Akito Hirano, Takashi Nakagawa
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Publication number: 20200333766Abstract: The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.Type: ApplicationFiled: July 6, 2020Publication date: October 22, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Masashi SUGISHITA, Yuuji URANO, Kiyohiko MAEDA, Masaaki UENO, Tetsuya KOSUGI, Masaya NISHIDA
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Patent number: 10497561Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: February 7, 2019Date of Patent: December 3, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Publication number: 20190206679Abstract: There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.Type: ApplicationFiled: December 27, 2018Publication date: July 4, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kiyohiko MAEDA, Masato TERASAKI, Yasuhiro MEGAWA, Takahiro MIYAKURA, Akito HIRANO, Takashi NAKAGAWA
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Publication number: 20190189422Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: ApplicationFiled: February 7, 2019Publication date: June 20, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
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Patent number: 10229829Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: April 11, 2018Date of Patent: March 12, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Patent number: 10163625Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: December 21, 2016Date of Patent: December 25, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Patent number: 10121654Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: GrantFiled: December 21, 2016Date of Patent: November 6, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
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Publication number: 20180233351Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: ApplicationFiled: April 11, 2018Publication date: August 16, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
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Patent number: 9793107Abstract: A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.Type: GrantFiled: March 27, 2014Date of Patent: October 17, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takaaki Noda, Satoshi Shimamoto, Shingo Nohara, Yoshiro Hirose, Kiyohiko Maeda
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Patent number: 9698007Abstract: A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.Type: GrantFiled: July 23, 2015Date of Patent: July 4, 2017Assignee: Hitachi Kokusai Electric Inc.Inventors: Takaaki Noda, Satoshi Shimamoto, Shingo Nohara, Yoshiro Hirose, Kiyohiko Maeda
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Patent number: 9666430Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.Type: GrantFiled: January 15, 2015Date of Patent: May 30, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasunobu Koshi, Keigo Nishida, Kiyohiko Maeda
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Publication number: 20170103885Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.Type: ApplicationFiled: December 21, 2016Publication date: April 13, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
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Patent number: 9349587Abstract: In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.Type: GrantFiled: October 2, 2013Date of Patent: May 24, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yoshiro Hirose, Atsushi Sano, Kazuyuki Okuda, Kiyohiko Maeda
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Publication number: 20150370245Abstract: The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.Type: ApplicationFiled: December 4, 2013Publication date: December 24, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masashi SUGISHITA, Yuuji URANO, Kiyohiko MAEDA, Masaaki UENO, Tetsuya KOSUGI, Masaya NISHIDA
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Publication number: 20150332916Abstract: A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.Type: ApplicationFiled: July 23, 2015Publication date: November 19, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takaaki NODA, Satoshi SHIMAMOTO, Shingo NOHARA, Yoshiro HIROSE, Kiyohiko MAEDA
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Patent number: 9177786Abstract: A method of manufacturing a semiconductor device includes forming a thin film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas to the substrate, and supplying excited species from each of a plurality of excitation units provided at a side of the substrate to the substrate. Each of the plurality of excitation units generates the excited species by plasma-exciting a reaction gas. In supplying the excited species from each of the plurality of excitation units, an in-plane distribution of the excited species supplied from at least one of the plurality of excitation units in the substrate differs from an in-plane distribution of the excited species supplied from another excitation unit, other than the at least one excitation unit, among the plurality of excitation units, in the substrate.Type: GrantFiled: March 18, 2013Date of Patent: November 3, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Atsushi Sano, Yoshiro Hirose, Kiyohiko Maeda, Kazuyuki Okuda, Ryuji Yamamoto
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Publication number: 20150126021Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.Type: ApplicationFiled: January 15, 2015Publication date: May 7, 2015Inventors: Yasunobu KOSHI, Keigo NISHIDA, Kiyohiko MAEDA
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Patent number: D739831Type: GrantFiled: September 20, 2013Date of Patent: September 29, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke Takagi, Kiyohiko Maeda, Yuji Urano, Naoki Matsumoto, Yasuaki Komae
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Patent number: D740769Type: GrantFiled: September 20, 2013Date of Patent: October 13, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke Takagi, Kiyohiko Maeda, Yuji Urano, Naoki Matsumoto, Yasuaki Komae