Abstract: A plasma treating apparatus includes: an air-core coil for generating a static magnetic field which is axially uniform and a high-frequency waveguide for generating a high-frequency electromagnetic field which is irregular in the axial direction of the air-core coil. A plasma generating glass tube is disposed in the high-frequency waveguide and adapted to be supplied with a gas and a plasma reaction bath held under a vacuum for receiving the plasma flow which is generated axially in the glass tube. A substrate platform is disposed in the reaction bath for supporting a substrate to be treated at a right angle with respect to the plasma flow. There is also included a magnetic field generating coil disposed outside of said reaction bath for shaping the plasma.

Abstract: An apparatus for treatment of a semiconductor wafer comprises a sealable treating vessel which forms a sealed treating chamber in the vessel when sealed. A gas feeder feeds a compressed gas to the treating chamber. A heating device is disposed out of the treating chamber. The semiconductor wafer in the treating chamber is treated with the compressed gas while it is heated by the heating device.