Abstract: The purpose of the present invention is to provide a pharmaceutical composition and a food which have the effect of preventing central nervous system diseases and inhibiting the advancement thereof. This pharmaceutical composition, which is used to prevent and treat central nervous system diseases, is characterized by including: a dried product or an extracted liquid of Anredera cordifolia; and nobiletin, which is a polymethoxyflavonoid.

Abstract: A pump unit includes an insertion guide member that extends in a longitudinal direction of the pump unit and is used to guide the pump unit at a time of inserting the pump unit into an opening portion of a fuel tank. The insertion guide member includes a stopper portion and a guide portion that are arranged along an edge part of the insertion guide member. When the pump unit is projected in the longitudinal direction onto a plane of projection, the stopper portion protrudes outward from an imaginary circle, which has a fitting portion's diameter, on the plane of projection. The guide portion guides the pump unit in a rotational direction relative to a stay. A cross section of the pump unit taken along a guide portion orthogonal plane is set to be within the imaginary circle, which has the fitting portion's diameter.

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: A power converter in which a plurality of semiconductor switches are connected to a drive circuit configured to control states of the semiconductor switches, the power converter including: a plurality of semiconductor switches having the same reference potential; a drive circuit configured to control states of the plurality of semiconductor switches; and a multilayer substrate in which a wiring that connects the drive circuit and the plurality of semiconductor switches and includes a reference potential wiring and a control signal wiring is disposed, wherein, in the multilayer substrate, the reference potential wiring and the control signal wiring are disposed in different layers at positions overlapping in a substrate lamination direction, and within the wiring, in a common wiring portion from the drive circuit to a branch point of the wiring and a branch wiring portion from the branch point to each of the semiconductor switches, an impedance of the common wiring portion is set to be lower than an impedance

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.

Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.

Abstract: A pump unit includes an insertion guide member that extends in a longitudinal direction of the pump unit and is used to guide the pump unit at a time of inserting the pump unit into an opening portion of a fuel tank. The insertion guide member includes a stopper portion and a guide portion that are arranged along an edge part of the insertion guide member. When the pump unit is projected in the longitudinal direction onto a plane of projection, the stopper portion protrudes outward from an imaginary circle, which has a fitting portion's diameter, on the plane of projection. The guide portion guides the pump unit in a rotational direction relative to a stay. A cross section of the pump unit taken along a guide portion orthogonal plane is set to be within the imaginary circle, which has the fitting portion's diameter.

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

Abstract: A three-level power converter includes a first module housing a vertical arm forming a three-level power conversion circuit; a second module disposed adjacent to the first module and housing an intermediate arm forming the three-level power conversion circuit; high-potential and low-potential connecting terminal boards each extending vertically, and having a lower end connected to connecting terminals on an upper surface of the first module, and an upper end provided with an external connecting end; and a flat intermediate-potential connecting terminal board extending vertically, and having a lower end connected to connecting terminals on an upper surface of the second module, and an upper end provided with an external connecting end. The high-potential, low-potential, and intermediate-potential connecting terminal boards are stacked close to and parallel to one another. Each of the external connecting ends is connected to a corresponding terminal of a DC capacitor.

Abstract: When a tip of a blade cascade is ground with a grindstone, a jig is inserted between blade cascades of a blisk and a jig is inserted between blade cascades. A blade locking section of the jig locks with a side section in the width direction of a corresponding rotor blade via a damping member made from rubber or the like. A disk locking section of the jig locks with a disk of the blade cascade which the blade locking section locks with.

Abstract: A substrate cleaning device 1 includes a substrate holding unit 10 configured to hold a substrate W, a first cleaning unit 11 having a first cleaning member 11a caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, a second cleaning unit 12 having a second cleaning member 12a caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, and a controller 50 configured to control the first and second cleaning units 11, 12 so that, when any one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding unit 10, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 10.

Abstract: A substrate cleaning device 1 includes a substrate holding unit 10 configured to hold a substrate W, a first cleaning unit 11 having a first cleaning member 11a caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, a second cleaning unit 12 having a second cleaning member 12a caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, and a controller 50 configured to control the first and second cleaning units 11, 12 so that, when any one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding unit 10, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 10.

Abstract: A power converter in which a plurality of semiconductor switches are connected to a plurality of drive circuits configured to control states of the semiconductor switches includes a first semiconductor switch, a second semiconductor switch, a first drive circuit, a second drive circuit, and a multilayer substrate in which a first wiring, and a second wiring are disposed.

Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.

Abstract: A power converter in which a plurality of semiconductor switches are connected to a drive circuit configured to control states of the semiconductor switches, the power converter including: a plurality of semiconductor switches having the same reference potential; a drive circuit configured to control states of the plurality of semiconductor switches; and a multilayer substrate in which a wiring that connects the drive circuit and the plurality of semiconductor switches and includes a reference potential wiring and a control signal wiring is disposed, wherein, in the multilayer substrate, the reference potential wiring and the control signal wiring are disposed in different layers at positions overlapping in a substrate lamination direction, and within the wiring, in a common wiring portion from the drive circuit to a branch point of the wiring and a branch wiring portion from the branch point to each of the semiconductor switches, an impedance of the common wiring portion is set to be lower than an impedance

Abstract: A power converter in which a plurality of semiconductor switches are connected to a plurality of drive circuits configured to control states of the semiconductor switches includes a first semiconductor switch, a second semiconductor switch, a first drive circuit, a second drive circuit, and a multilayer substrate in which a first wiring, and a second wiring are disposed.

Abstract: A series circuit of capacitors and a series circuit of semiconductor switches such as SiC-MOSFETs are connected in parallel to a direct current power source, and one end of a bidirectional switch formed of semiconductor switches, such as IGBTs, and diodes, such as SiC-SBDs (Silicon Carbide Schottky Barrier Diodes), is connected to a series connection point (an M point) of the capacitors, while the other end of the bidirectional switch is connected to a series connection point of the semiconductor switches, in a three-level inverter that outputs three voltage levels by operating the semiconductor switches so as to satisfy at least one of the condition that the peak value of an alternating current output voltage Vo is a value of 80% or more of the voltage of the capacitors and the condition that an output power factor is 0.8 or more.

Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.