Abstract: According to one embodiment, a video/audio reproducing apparatus includes a detection/determination part, a setting processing part, and an output signal processing part. The detection/determination part obtains a format of reproducible audio data and video data. The setting processing part receives bit stream data in a reproducing apparatus from among the format of the audio data and the video data, which has been obtained by the detection/determination part and can be reproduced by the reproducing apparatus, and detects that the reproducing apparatus capable of reproducing the bit stream data is connected. The output signal processing part directly receives the bit stream data to output the bit stream data to the reproducing apparatus capable of reproducing the bit stream data when the setting processing part receives the bit stream data and detects that the reproducing apparatus capable of reproducing the bit stream data is connected.

Abstract: A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of light absorption of a reaction product, e.g., SiF4, for which, to be more precise, ranges from 9 ?m to 10 ?m, the light is irradiated onto a surface of an object to be processed from the light source. The SiF4 molecules absorb the light, become activated and gain kinetic energy to be used in gaining an easy escape from a hole. As a consequence, an amount (a partial pressure) of fluorine radicals (F*) used as an etchant is increased and an etching rate of a silicon is increased.

Abstract: An endoscope apparatus according to the present invention is featured by including: an endoscope which has a connector main body; an apparatus main body to which the connector main body can be detachably mounted; a closed space which, after the connector main body is mounted to the apparatus main body, is formed in exterior housings of the apparatus main body and the connector main body by being closed by the exterior housings; a heat generating portion which is provided in the closed space; and a fan which is provided in the closed space, and performs at least one of dissipation of heat of the heat generating portion to the closed space and transfer of heat in the atmosphere in the closed space to the exterior housing.

Abstract: An endoscope apparatus includes an operation section main body configured to include a frame body and bumper members provided to cover plural surfaces of the frame body. An operation section is configured to include the operation section main body and a grasping section. An endoscope is configured to include an insertion section extended out from one surface side of the operation section main body and including a bending section in a position more proximal than a distal end and a universal cable extended out from the other surface side of the operation section main body opposed to the one surface. On the other hand, the universal cable is connected to an apparatus main body.

Abstract: An endoscope includes a thin and long flexible insertion portion extended from an operation portion having a grasping portion. Further, the endoscope is configured such that the operation portion includes a holding portion for holding a distal end portion, a bending portion, or the like, which are distal end side portions of the insertion portion, so as to thereby prevent a trouble which may be caused by an article being placed on the insertion portion, or by the insertion portion being stepped by the user, or the like.

Abstract: An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.

Abstract: An information recording medium includes a first area (DA2) for storing picture data for forming a plurality of pictures, a second area (DA21) which is included in the first area and stores control data of the picture data, and a third area (INFO1) which is included in the second area and stores specifying data for specifying the storage position of representative picture data for forming a representative picture in the plurality of pictures.

Abstract: An information recording medium includes a first area (DA2) for storing picture data for forming a plurality of pictures, a second area (DA21) which is included in the first area and stores control data of the picture data, and a third area (INFO1) which is included in the second area and stores specifying data for specifying the storage position of representative picture data for forming a representative picture in the plurality of pictures.

Abstract: An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

Abstract: A plasma etching apparatus includes an evacuable processing chamber for performing a plasma etching process on a target object; a mounting table for mounting thereon the target object in the processing chamber; and a shower head facing the mounting table, for introducing a processing gas for generating a plasma to the processing chamber. Further, the apparatus includes a ring-shaped protrusion protruded from a bottom surface of the shower head toward the mounting table; and a plurality of gas introducing openings inclusively arranged in an area smaller than the target object in an inner central portion of the ring-shaped protrusion on the bottom surface of the shower head.

Abstract: According to one embodiment, an information reproducing apparatus and method which is able to determine the type of and the standard for a disc on the basis of predetermined priorities, includes an optical head including a light source unit which outputs either first laser light or second laser light having a wavelength different from that of the first light, and a notice processing section which outputs display information indicating that the disc is compatible with the wavelength of the first laser light when the tracking error signal exceeds the predetermined threshold and which outputs display information indicating that the disc is compatible with the wavelength of the second laser light when the tracking error signal does not exceed the predetermined threshold.

Abstract: Systems and methods control an analog output of an information reproducing apparatus, such as a high-definition DVD player. At least partially in response to a determination that a multimedia presentation is content protected, one embodiment reduces a displayed resolution of an analog output to less than a full available resolution. In another embodiment, the analog output for the multimedia presentation is disabled, and the analog output carries an instruction for a user to switch to a digital output of the reproducing apparatus.

Abstract: A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 ?m.

Abstract: A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of light absorption of a reaction product, e.g., SiF4, for which, to be more precise, ranges from 9 ?m to 10 ?m, the light is irradiated onto a surface of an object to be processed from the light source. The SiF4 molecules absorb the light, become activated and gain kinetic energy to be used in gaining an easy escape from a hole. As a consequence, an amount (a partial pressure) of fluorine radicals (F*) used as an etchant is increased and an etching rate of a silicon is increased.

Abstract: The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure.

Abstract: The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure.

Abstract: A method for detecting microorganisms or cells wherein microorganisms or cells contained in a sample are captured on the surface of the adhesive layer of a collection sheet having a substrate layer containing a focusing marker, an adhesive layer having a predetermined thickness and deposited on this substrate layer, the microorganisms or cells are stained by a staining reagent, and after being automatically focused, the light receiving optical system or the collection sheet is moved relatively by a distance equivalent to that obtained by adding the distance from the surface of the substrate layer to the position of the focusing marker to the predetermined thickness of the adhesive layer from the focusing position by this autofocusing reference point, the microorganisms or cells on the adhesive layer are automatically focused, and a light is radiated on the focused adhesive layer to measure the image and detect the microorganisms or cells.

Abstract: A method of counting microorganisms or cells in a sample by labeling the microorganisms or cells with a fluorescent labeling reagent, which comprises contacting the sample containing the microorganisms or cells with an adhesive sheet having an adhesive layer laminated on at least one surface of a substrate to capture the sample; before fluorescent-labeling the microorganisms or cells, obtaining a first fluorescent image of the sample; after fluorescent-labeling the microorganisms or the cells, obtaining a second fluorescent image of the sample, and then determining the difference in the number of luminous points between the first and second images, or determining a differential image between the first and second images and determining the number of luminous points in this differential image, or determining the number of luminous points among the luminous points in the second image located outside non-sensitive regions attached to the individual luminous points in the first image.

Abstract: An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.