Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Abstract: A server device and a power management method for the server device are provided. The server device includes a power supply device, a power transmission path, and at least one electronic device. The power supply device includes a first power line communication (PLC) transceiver. The at least one electronic device is coupled to the power transmission path to obtain power from the power supply device. The at least one electronic device includes a second PLC transceiver. The at least one electronic device utilizes the second PLC transceiver to communicate with the first PLC transceiver in the power supply device through the power transmission path to obtain an operation status of the power supply device and control the power supply device.

Abstract: A computer system and a bus arbitration method are provided. The computer system includes a bus, a plurality of master devices, and a slave device. The master devices and the slave device are coupled to the bus. Each of the master devices determines the number of the operating master devices through the bus. When a first master device intends to access the slave device, the first master device performs a bus arbitration on the slave device and attempts to access the slave device. If the slave device is accessed successfully, the first master device does not participate in N number of times of subsequent bus arbitrations. If the slave device is accessed unsuccessfully, the first master device determines whether the slave device is released. If the slave device is released, the first master device performs a next bus arbitration and attempts to access the slave device continuously.

Abstract: A control method for data storage system includes obtaining a correlation coefficient corresponding to storage devices using a control device, and adjusting the link speed of one of the storage devices using the control device.

Abstract: A server system and a method for detecting a transmission mode of the server system are provided. The storage system includes a control device and a storage back plane. The storage back plane includes a non-volatile memory module having mode information. When the control device is plugged into the storage back plane, the control device obtains the mode information of the storage back plane, determines whether the transmission mode of the control device matches the mode information, and decides whether to send a first prompt signal according to whether the transmission mode of the control device matches the mode information.

Abstract: A server system and a data access method using the same are provided. The server system includes a first server and a second server. The first server includes a first host, a first expander unit and a first peripheral device. The first expander unit is coupled to the first host, and the first peripheral device is coupled to the first expander unit. The second server includes a second host, a second expander unit and a second peripheral device. The second expander unit is coupled to the second host, and the second peripheral device is coupled to the second expander unit. The first expander unit is connected to the second expander unit. The first host accesses the first peripheral device through the first expander unit. The first host further accesses the second peripheral device through the first expander unit and the second expander unit while the second host malfunctions.

Abstract: A lashing eye assembly includes amounting unit and an eye plate unit which includes two wing members and a bridge member. The wing members are angularly displaced from each other about an axle axis. Each of the wing members has a rim portion and a body portion which is formed with a lashing eye configured to couple a lower end of a lashing rod assembly. The bridge member has an outer interconnecting surface interconnecting outward regions of the rim portions of the wing members, and an inner interconnecting surface which extends in a circumferential direction about the axle axis to interconnect inward regions of the rim portions of the wing members.

Abstract: A power distribution board for a modular chassis system, wherein the modular chassis system is configured to install a plurality of electrical devices, and the power distribution board comprises: a plurality of detecting pins, a microcontroller and a plurality of protecting circuits. The plurality of detecting pins electrically connects to the plurality of electrical devices respectively, and each detecting pins is configured to detect a modular type of a respective one of the electrical devices. The microcontroller electrically connects to the plurality of the detecting pins and selectively chooses one of a plurality of configurations according to the detected modular type. Each of the protecting circuits electrically connects to the microcontroller and corresponds to one of the electrical devices, each of the protecting circuits set a rated power value according to the chosen one of the configurations.

Abstract: A storage server system includes a storage module including at least one storage device for generating at least one present signal, a micro controller coupled to the storage module for generating a setting signal according to the at least one present signal and system information, and a tunable resistor coupled to the micro controller, wherein a resistance of the tunable resistor is corresponding to an over current protection value of the storage server system.

Abstract: A manufacturing method of an epitaxial fin-shaped structure includes the following steps. A substrate is provided. A recess is formed in the substrate. An epitaxial layer is formed on the substrate. The epitaxial layer is partly formed in the recess and partly formed outside the recess. The epitaxial layer has a dent formed on the top surface of the epitaxial layer, and the dent is formed corresponding to the recess in a thickness direction of the substrate. A nitride layer is conformally formed on the epitaxial layer. An oxide layer is formed on the nitride layer. A first planarization process is performed to remove a part of the oxide layer, and the first planarization process is stopped on the nitride layer. The epitaxial layer in the recess is patterned for forming at least one epitaxial fin-shaped structure.

Abstract: A manufacturing method of an epitaxial fin-shaped structure includes the following steps. A substrate is provided. A recess is formed in the substrate. An epitaxial layer is formed on the substrate. The epitaxial layer is partly formed in the recess and partly formed outside the recess. The epitaxial layer has a dent formed on the top surface of the epitaxial layer, and the dent is formed corresponding to the recess in a thickness direction of the substrate. A nitride layer is conformally formed on the epitaxial layer. An oxide layer is formed on the nitride layer. A first planarization process is performed to remove a part of the oxide layer, and the first planarization process is stopped on the nitride layer. The epitaxial layer in the recess is patterned for forming at least one epitaxial fin-shaped structure.

Abstract: A management method for a storage system is disclosed. The storage system comprises a plurality of hard disks, the management method comprises dividing the plurality of hard disks into a hot storage group, a warm storage group and a cold storage group according to a first threshold and a second threshold; exchanging a first warm storage hard disk conforming to the first threshold in the warm storage group with a hot storage hard disk in the hot storage group in response to not conform to the first threshold; and exchanging a cold storage hard disk conforming to the second threshold in the cold storage group with a second warm storage hard disk in the warm storage group in response to conform to the second threshold.

Abstract: A metadata management method for a memory device includes generating a virtual address layer in a memory space of a non-volatile memory of the memory device; establishing a mapping table in the virtual address layer to store at least one metadata corresponding to at least one storing block, wherein the at least one storing block comprises at least one physical address and the at least one physical address is related to the memory space; when writing at least one datum to the memory device, writing the at least one datum to at least one memory block of the memory space according to the at least one physical address; and updating the at least one metadata of the at least one storing block when finishing writing the at least one datum.

Abstract: A method for fabrication a nanosheet device includes providing forming a stacked layer on a substrate, having first material layers and second material layers in different materials, alternatingly stacked up. The stacked layer is patterned to a stacked fin. A dummy stack is formed on the stacked fin. An etching back process is performed with the dummy stack with spacers to etch the stacked fin and expose the substrate. Laterally etches the first material layers and the second material layers, to have indent portions. Inner spacers fill the indent portions. A first/second source/drain layer is formed on the substrate at both sides of the dummy stack. Etching process is performed to remove the dummy gate of the dummy stack and the selected one of the first material layers and the second material layers between the inner spacers. Metal layer fills between the spacers and the inner spacers.

Abstract: A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Abstract: A lashing eye assembly includes amounting unit and an eye plate unit which includes two wing members and a bridge member. The wing members are angularly displaced from each other about an axle axis. Each of the wing members has a rim portion and a body portion which is formed with a lashing eye configured to couple a lower end of a lashing rod assembly. The bridge member has an outer interconnecting surface interconnecting outward regions of the rim portions of the wing members, and an inner interconnecting surface which extends in a circumferential direction about the axle axis to interconnect inward regions of the rim portions of the wing members.

Abstract: A storage server system includes a storage module including at least one storage device for generating at least one present signal, a micro controller coupled to the storage module for generating a setting signal according to the at least one present signal and system information, and a tunable resistor coupled to the micro controller, wherein a resistance of the tunable resistor is corresponding to an over current protection value of the storage server system.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.