Abstract: An integrated circuit includes a first and a second standard cell. The first standard cell includes a first gate electrode, and a first channel region underlying the first gate electrode. The first channel region has a first channel doping concentration. The second standard cell includes a second gate electrode, and a second channel region underlying the second gate electrode. The second channel region has a second channel doping concentration. A dummy gate includes a first half and a second half in the first and the second standard cells, respectively. The first half and the second half are at the edges of the first and the second standard cells, respectively, and are abutted to each other. A dummy channel is overlapped by the dummy gate. The dummy channel has a third channel doping concentration substantially equal to a sum of the first channel doping concentration and the second channel doping concentration.

Abstract: Disclosed is an automatic dust-removing and cleaning device for a filter net of an air-conditioner which has a filter net (2) with an end to end sealing ring structure. The filter net (2) comprises a net frame (21) provided with gear sockets (211), and a mesh (22). A driving gear (5) is installed at one corner of an air inlet frame (1) of the air conditioner and meshed with the gear sockets (211) of the net frame (21). Driven gears (6) are installed at the other three corners of the air inlet frame (1) of the air conditioner and meshed with the gear sockets (211) of the net frame (21). A drive mechanism (12) drives the driving gear (5) to rotate. A dust-collecting box (3) is installed at the bottom of the air inlet frame (1) of the air conditioner and provided with a water inlet and a water outlet. The water inlet is connected to a water inlet pipe (8) and the water outlet is connected to a water outlet pipe (9).

Abstract: An automatic depressurizing pump includes an air-generating unit and an airflow control unit. The air-generating unit has a first air intake hole. An air generated by the air-generating unit drives the air control unit so as to inhale or exhale airflows through the first air intake hole. The airflow control unit includes a valve base, a first valve, a second valve, a top cover, and a resilient member.

Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.

Abstract: The present invention discloses the combined treatment of memantine (N-methyl-D-aspartate receptor antagonist) and tea polyphenol (an antioxidant and anti-inflammatory agent) is more effective (synergistic) in neuroprotection than either memantine or tea polyphenol alone in mouse excitotoxic injury. These findings provide useful information about the potential application of memantine and tea polyphenols in preventing or treating clinical excitotoxic injury such as brain trauma, brain ischemia, epilepsy, and Alzheimer's disease.

Abstract: A method is disclosed that includes the operations outlined below. An effective current pulse width of a maximum peak is determined based on a waveform function of a current having multiple peaks within a waveform period in a metal segment of a metal line in at least one design file of a semiconductor device to compute a duty ratio between the effective current pulse width and the waveform period. A maximum direct current limit of the metal segment is determined according to physical characteristics of the metal segment. An alternating current electromigration (AC EM) current limit is determined according to a ratio between the maximum direct current limit and a function of the duty ratio. The metal segment is included with the physical characteristics in the at least one design file when the maximum peak of the current does not exceed the AC EM current limit.

Abstract: A method is disclosed that includes the operations outlined below. A first criteria is determined to be met when directions of a first current and a second current around a first end and a second end of a metal segment respectively are opposite, in which the metal segment is a part of a power rail in at least one design file of a semiconductor device and is enclosed by only two terminal via arrays. A second criteria is determined to be met when a length of the metal segment is not larger than a electromigration critical length. The metal segment is included in the semiconductor device with a first current density limit depending on the length of the metal segment when the first and the second criteria are met.

Abstract: A blue LED device has a transparent substrate and a reflector structure disposed on the backside of the substrate. The reflector structure includes a Distributed Bragg Reflector (DBR) structure having layers configured to reflect yellow light as well as blue light. In one example, the DBR structure includes a first portion where the thicknesses of the layers are larger, and also includes a second portion where the thicknesses of the layers are smaller. In addition to having a reflectance of more than 97.5 percent for light of a wavelength in a 440 nm-470 nm range, the overall reflector structure has a reflectance of more than 90 percent for light of a wavelength in a 500 nm-700 nm range.

Abstract: A blue LED device has a transparent substrate and a reflector structure disposed on the backside of the substrate. The reflector structure includes a Distributed Bragg Reflector (DBR) structure having layers configured to reflect yellow light as well as blue light. In one example, the DBR structure includes a first portion where the thicknesses of the layers are larger, and also includes a second portion where the thicknesses of the layers are smaller. In addition to having a reflectance of more than 97.5 percent for light of a wavelength in a 440 nm-470 nm range, the overall reflector structure has a reflectance of more than 90 percent for light of a wavelength in a 500 nm-700 nm range.

Abstract: A rotor structure of a fan includes a bushing, a hub, a shaft and a plurality of blades. The hub has a top portion and a sidewall, and the top portion of the hub covers the bushing. The hub and the bushing are made by the same material. One end of the shaft is connected to the bushing, and the shaft is disposed inside the top portion. The blades are disposed on the outer side of the sidewall of the hub. A manufacturing method of the rotor structure is also disclosed.

Abstract: A portable wireless communication device includes a connector configured to charge the portable wireless communication device by electronically connecting a power source to the portable wireless communication device. The connector includes a plurality of pins, one of the pins configured to serve as a radiation portion of an antenna to receive/send wireless signals when the connector electronically is uncoupled to the power source.

Abstract: A slip-resistant shoelace is provided. The shoelace includes an external tube and a core. The external tube is woven with textiles and formed with a cavity and has a substantially constant outer diameter. The core is disposed in the cavity and woven with textile threads including at least one first textile thread and second textile threads. The at least one first textile thread includes combining sections and interval sections arranged axially at intervals, and the second textile threads are woven and entangled with each combining sections to form an enlarged portion, wherein the outer diameter of each enlarged portion is larger than that of each interval section, and the outer diameter of each enlarged portion is smaller than the inner diameter of the external tube. Therefore, because of the enlarged portions, it can prevent knot slipping and maintain smooth appearance.

Abstract: An integrated circuit includes a first and a second standard cell. The first standard cell includes a first gate electrode, and a first channel region underlying the first gate electrode. The first channel region has a first channel doping concentration. The second standard cell includes a second gate electrode, and a second channel region underlying the second gate electrode. The second channel region has a second channel doping concentration. A dummy gate includes a first half and a second half in the first and the second standard cells, respectively. The first half and the second half are at the edges of the first and the second standard cells, respectively, and are abutted to each other. A dummy channel is overlapped by the dummy gate. The dummy channel has a third channel doping concentration substantially equal to a sum of the first channel doping concentration and the second channel doping concentration.

Abstract: Apparatus and method are provided for small cell energy saving. In one novel aspect, switch-off-request is broadcasted by the small cell detecting the low-load condition. The small cells upon receiving the switch-off-request message enter the frozen state, which prevents the small cells from switching off. In another novel aspect, the small cell in the low-load condition request measurement reports from the UEs. The UEs replies with the measurement-reports message, which includes the detected neighboring IDs and the UE's traffic load. The low-load small cell includes the information derived from the measurement-reports in the switch-off-request message. In another novel aspect, the small cell broadcasts the switch-on-request message. Upon receiving switch-on-acknowledge messages from switched-off neighboring small cells, the small cell selects one or more target cells to send the cell-activation-request.

Abstract: A circuit is disclosed that includes a plurality of voltage control circuits. Each voltage control circuit of the voltage control circuits includes a driver circuit and a switch circuit. The driver circuit is configured to receive a control signal having a series of pulses. The switch circuit is configured to generate a driving voltage when being turned on. The driver circuit alternately turns on and off the switch circuit in accordance with the series of pulses.

Abstract: A manufacturing method for a stage tube that has a first tubular segment and a second tubular segment bordering mutually having different diameters includes: taking a metal plate that has a first segment and a second segment bordering mutually and having a first width and a second width, respectively, the first width being defined between two first paired edges, and the two second width being defined between two second paired edges; forming the first and second segments so as to define a first edge interval; rolling up the first and second segments so that the two first paired edges are jointed together and form the first tubular segment, while the second segment is formed to define a second edge interval; and rolling up the second segment so that the two second paired edges are jointed and form the second tubular segment.

Abstract: This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 ?m rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.

Abstract: An antenna structure includes a first radiating body and a second radiating body. The first radiating body includes a feed portion, a first ground portion, a first extending portion, a second extending portion, and a third extending portion. The feed portion is electronically connected to the first ground portion. The first extending portion is electronically connected to the feed portion. The second extending portion is perpendicularly connected between the first extending portion and the third extending portion. The second radiating body includes a second ground portion and a combining portion electronically connected to the second ground portion. The combining portion is spaced from the third extending portion.

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.