Abstract: The present disclosure provides a baby carrier including a base; a leg section fixedly connected to the base; a backrest section pivotably connected to the base; and a guider configured for passage of a seat belt. The guider includes a first guider arranged in the leg section and a second guider arranged in the backrest section. The baby carrier according to the present disclosure can be securely bound by the seat belt and can be stabilized against a backrest of a vehicle seat.

Abstract: Provided are a cathode material for sodium-ion batteries, a preparation method therefor, and an application thereof, and the preparation method comprises the following steps: (1) mixing a nickel source, a manganese source, and a magnesium source to obtain a ternary salt solution, adding the ternary salt solution, a precipitating agent, a complexing agent, a boron source solution, and an organic additive to a reaction vessel in parallel flow, and performing a reaction to obtain a B-doped radially-packed hydroxide precursor; and (2) mixing the B-doped radially-packed hydroxide precursor obtained in step (1) with a sodium source, and performing sintering treatment to obtain the cathode material for sodium-ion batteries.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure including interleaved conductive layers and dielectric layers, a doped semiconductor layer, and a channel structure extending through the stack structure and in contact with the doped semiconductor layer. The channel structure includes a composite dielectric film and a semiconductor channel along a first direction. The composite dielectric film includes a gate dielectric portion and a memory portion along a second direction perpendicular to the first direction. A part of the gate dielectric portion faces, along the first direction, one of the conductive layers that is closest to the doped semiconductor layer.

Abstract: A quantitative prediction method for gas content of deep marine shale includes: obtaining raw data of known wells; establishing relationship formulas between pore specific surface areas and adsorbed gas contents of a known well in an area as an adsorbed gas content quantitative prediction model; establishing relationship formulas between pore volumes and free gas contents of the known well as a free gas content quantitative prediction model; summing the adsorbed gas contents and corresponding free gas contents to obtain total gas contents; calculating adsorbed gas contents, free gas contents and total gas contents of the known wells; drawing a predicted adsorbed gas content contour map, a predicted free gas content contour map and a predicted total gas content contour map; and reading an adsorbed gas content, a free gas content and a total gas content of an unknown well in the area from the above contour maps.

Abstract: Performance is improved. There is provided a negative electrode material for a battery, in which the negative electrode material includes carbon, sodium tungstate, and silicon particles 33 including silicon, and in the silicon particle 33, a ratio of the amount of Si in Si2p derived from elemental silicon to the amount of Si in Si2p derived from SiO2 in a surface layer when measured by X-ray photoelectron spectroscopy is 3 or more on an atomic concentration basis.

Abstract: The present application discloses a rolling lawn aerator, including a perforating device, where the perforating device is capable of rolling on a lawn so as to perforate and aerate the lawn. The perforating device includes a body assembly and a plurality of perforating assemblies, and the plurality of perforating assemblies are arranged in a circumferential direction of the body assembly; and each of the perforating assemblies includes a perforating pipe, and at least a part of a structure of the perforating pipe exceeds the body assembly in a radial direction of the body assembly.

Abstract: The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes disposing an alternating dielectric stack over a substrate, wherein the alternating dielectric stack includes first dielectric layers and second dielectric layers alternatingly stacked on the substrate. The method also includes forming a channel structure penetrating through the alternating dielectric stack and extending into the substrate, wherein the channel structure includes a channel layer disposed on a sidewall of a memory film. The method further includes removing the substrate and a portion of the memory film that extends into the substrate to expose a portion of the channel layer; and disposing an array common source (ACS) on the exposed portion of the channel layer.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack, a semiconductor layer, a supporting structure, a spacer structure, and a contact structure. The memory stack includes interleaved conductive layers and dielectric layers and includes a staircase region in a plan view. The semiconductor layer is in contact with the memory stack. The supporting structure overlaps the staircase region of the memory stack and is coplanar with the semiconductor layer. The supporting structure includes a material other than a material of the semiconductor layer. The spacer structure is outside the memory stack and is coplanar with the supporting structure and the semiconductor layer. The contact structure extends vertically and is surrounded by the spacer structure.

Abstract: In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A first semiconductor structure including an array of NAND memory strings is formed on a first substrate. A second semiconductor structure including a recess gate transistor is formed on a second substrate. The recess gate transistor includes a recess gate structure protruding into the second substrate. The first semiconductor structure and the second semiconductor structure are bonded in a face-to-face manner, such that the array of NAND memory strings is coupled to the recess gate transistor across a bonding interface.

Abstract: The invention provides scalable methods for measuring chromatin accessibility and RNA expression in the same single cells by connecting chromatin accessibility and transcriptome. Specifically, the disclosure provides a methods for concurrent characterization of gene expression levels and epigenetic landscape within a single cell comprising determining chromatin accessibility and RNA expression in the cell with a splint oligonucleotide.

Abstract: Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.

Abstract: A method for data erasing of a non-volatile memory device is disclosed. The memory includes multiple memory cell strings each including a select gate transistor and multiple memory cells that are connected in series. The method comprises applying a step erase voltage to one memory cell string for an erase operation, the step erase voltage having a step-rising shaped voltage waveform. The method further comprises, during a period when the step erase voltage rises from an intermediate level to a peak level, raising a voltage of the select gate transistor from a starting level to a peak level, and raising a voltage of a predetermined region from a starting level to a peak level, such that a gate-induced drain leakage current is generated in the one memory cell string. The predetermined region is adjacent to the at least one select gate transistor and includes at least one memory cell.

Abstract: Disclosed are a visualization grouting device for coal and rock fissures and a test method, a test device including a visualization fissure grouting box body, a box body bracket, a grouting device and a monitoring device. A bottom plate is divided into four identical areas, rubber cushion blocks with different specifications are arranged to simulate different fissure widths and tortuosity, artificial protolith thin film is pasted inside, and a grouting hole and a plurality of pressure measuring holes are arranged in the center of the upper top plate. In the present disclosure, the grouting process of fissures under different grouting conditions, such as different fissure widths, roughness, grouting resistance and tortuosity of pore channels can be simulated, the grouting under different fissure conditions can be simultaneously simulated, and the differences of different grouting diffusion forms can be clearly and intuitively analyzed and compared through the visualization box body.

Abstract: A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bottom contact coupled to the second memory cell. The first memory cell can include a first pillar, a first insulating layer surrounding the first pillar, a first gate contact coupled to a first word line, and a second gate contact coupled to a first plate line. The second memory cell can include a second pillar, a second insulating layer surrounding the second pillar, a third gate contact coupled to a second word line, and a fourth gate contact coupled to a second plate line. The 3D memory device can utilize dynamic flash memory (DFM), increase storage density, provide multi-cell storage, provide a three-state logic, decrease leakage current, increase retention time, and decrease refresh rates.

Abstract: Presented are methods and compositions for obtaining sequence information from one or more individual cells. The methods are useful for obtaining sequence information for a single nucleotide sequence, and for multiplex generation of sequence information from one or more individual cells.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure including interleaved conductive layers and stack dielectric layers, a channel structure extending through the stack structure, and a doped semiconductor layer. The channel structure includes a memory film and a semiconductor channel. The semiconductor channel includes a doped portion and an undoped portion. A part of the doped portion of the semiconductor channel extends beyond the stack structure in a first direction. A part of the doped semiconductor layer is in contact with a sidewall of the part of the doped portion of the semiconductor channel that extends beyond the stack structure.

Abstract: In an example, a method for forming a three-dimensional (3D) memory device is disclosed. A semiconductor layer is formed. A memory stack on the semiconductor is formed. A channel structure extending through the memory stack and the semiconductor layer is formed. An end of the channel structure abutting the semiconductor layer is exposed. A portion of the channel structure abutting the semiconductor layer is replaced with a semiconductor plug.

Abstract: The present disclosure discloses a child safety seat, which is for being installed on a vehicle seat. The child safety seat includes a base having an anchor part connected to the vehicle seat; a seat coupled to the base; a top rod fixed to the rear of the base; a tether assembly including a top tether and a tether fixing portion that are connected with each other, the top tether being connected with the top rod and the tether fixing portion being connected with the vehicle seat; and an alarm device including a switch which can be triggered when the top tether is tightened. The present disclosure also discloses a tether assembly and a support structure. The child safety seat can conveniently prompt that it is not correctly fixed, and can be conveniently fixed and adjusted, thereby improving the safety and riding comfort of the child safety seat.

Abstract: A core-shell gradient ternary precursor and a preparation method and application thereof. The preparation method includes (1) mixing a terephthalic acid solution with alkaline liquor to obtain a terephthalic acid salt solution, adding a nickel source solution for a reaction to obtain a Ni-MOF solution, mixing the Ni-MOF solution with ammonia water, and adjusting a pH value to obtain a base solution; and (2) adding a nickel-cobalt-manganese ternary mixed salt solution, a liquid alkali solution, and an ammonia-water solution simultaneously to the base solution obtained in step (1) for a co-precipitation reaction, and obtaining the core-shell gradient ternary precursor after aging treatment. The Ni-MOF is pre-prepared and used as a core for the co-precipitation reaction, to obtain the core-shell like precursor with a gradient. Carbon in the core of the core-shell gradient ternary precursor reacts with oxygen, thereby reducing a nickel oxidation state on particle surfaces and reducing crack generation.

Abstract: Systems and methods for attributing a scroll event are described herein. The system can provide, to a client device, an infinite scroll attribution script. The script can cause the client device to set a dimension of an inline frame, embedded with a content document, of an page to a dimension corresponding to a viewport of an application and determine, responsive to detecting a scroll event, that a first offset between a first content document end and a first viewport end is less than or equal to a first predetermined threshold. The script can further cause the client device to determine, responsive to detecting the scroll event, that a second offset between a second content document end and a second viewport end is greater than or equal to a second threshold and assign the scroll event to the inline frame responsive to the determinations of the first and second offsets.