Patents by Inventor Kun Zhang

Kun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12262533
    Abstract: A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bottom contact coupled to the second memory cell. The first memory cell can include a first pillar, a first insulating layer surrounding the first pillar, a first gate contact coupled to a first word line, and a second gate contact coupled to a first plate line. The second memory cell can include a second pillar, a second insulating layer surrounding the second pillar, a third gate contact coupled to a second word line, and a fourth gate contact coupled to a second plate line. The 3D memory device can utilize dynamic flash memory (DFM), increase storage density, provide multi-cell storage, provide a three-state logic, decrease leakage current, increase retention time, and decrease refresh rates.
    Type: Grant
    Filed: April 28, 2022
    Date of Patent: March 25, 2025
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Tao Yang, Dongxue Zhao, Yuancheng Yang, Lei Liu, Kun Zhang, Di Wang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Publication number: 20250092457
    Abstract: Presented are methods and compositions for obtaining sequence information from one or more individual cells. The methods are useful for obtaining sequence information for a single nucleotide sequence, and for multiplex generation of sequence information from one or more individual cells.
    Type: Application
    Filed: December 5, 2024
    Publication date: March 20, 2025
    Inventors: Jian-Bing Fan, Kun Zhang
  • Patent number: 12255181
    Abstract: In an example, a method for forming a three-dimensional (3D) memory device is disclosed. A semiconductor layer is formed. A memory stack on the semiconductor is formed. A channel structure extending through the memory stack and the semiconductor layer is formed. An end of the channel structure abutting the semiconductor layer is exposed. A portion of the channel structure abutting the semiconductor layer is replaced with a semiconductor plug.
    Type: Grant
    Filed: December 23, 2022
    Date of Patent: March 18, 2025
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Patent number: 12256540
    Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure including interleaved conductive layers and stack dielectric layers, a channel structure extending through the stack structure, and a doped semiconductor layer. The channel structure includes a memory film and a semiconductor channel. The semiconductor channel includes a doped portion and an undoped portion. A part of the doped portion of the semiconductor channel extends beyond the stack structure in a first direction. A part of the doped semiconductor layer is in contact with a sidewall of the part of the doped portion of the semiconductor channel that extends beyond the stack structure.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: March 18, 2025
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Publication number: 20250083579
    Abstract: The present disclosure discloses a child safety seat, which is for being installed on a vehicle seat. The child safety seat includes a base having an anchor part connected to the vehicle seat; a seat coupled to the base; a top rod fixed to the rear of the base; a tether assembly including a top tether and a tether fixing portion that are connected with each other, the top tether being connected with the top rod and the tether fixing portion being connected with the vehicle seat; and an alarm device including a switch which can be triggered when the top tether is tightened. The present disclosure also discloses a tether assembly and a support structure. The child safety seat can conveniently prompt that it is not correctly fixed, and can be conveniently fixed and adjusted, thereby improving the safety and riding comfort of the child safety seat.
    Type: Application
    Filed: November 25, 2024
    Publication date: March 13, 2025
    Applicant: WONDERLAND SWITZERLAND AG
    Inventors: Zhengwen GUO, Zongwang Cui, Xiaolong Mo, Ruyi Li, Kun Zhang, Zujian Liu, Yingzhong Chen
  • Publication number: 20250083974
    Abstract: A core-shell gradient ternary precursor and a preparation method and application thereof. The preparation method includes (1) mixing a terephthalic acid solution with alkaline liquor to obtain a terephthalic acid salt solution, adding a nickel source solution for a reaction to obtain a Ni-MOF solution, mixing the Ni-MOF solution with ammonia water, and adjusting a pH value to obtain a base solution; and (2) adding a nickel-cobalt-manganese ternary mixed salt solution, a liquid alkali solution, and an ammonia-water solution simultaneously to the base solution obtained in step (1) for a co-precipitation reaction, and obtaining the core-shell gradient ternary precursor after aging treatment. The Ni-MOF is pre-prepared and used as a core for the co-precipitation reaction, to obtain the core-shell like precursor with a gradient. Carbon in the core of the core-shell gradient ternary precursor reacts with oxygen, thereby reducing a nickel oxidation state on particle surfaces and reducing crack generation.
    Type: Application
    Filed: August 18, 2022
    Publication date: March 13, 2025
    Applicant: JINGMEN GEM CO., LTD.
    Inventors: Kaihua XU, Xianjin YUE, Kun ZHANG, Wenchao HUA, Cong LI, Xing YANG, Hao LV, Wenfang YUAN, Dongming JIA, Xiaofei XUE, Xueqian LI, Liangjiao FAN, Xing XIANG, Xiaoshuai ZHU, Jiamin SHI, Zhengjie GONG, Daodao YIN
  • Patent number: 12248673
    Abstract: Systems and methods for attributing a scroll event are described herein. The system can provide, to a client device, an infinite scroll attribution script. The script can cause the client device to set a dimension of an inline frame, embedded with a content document, of an page to a dimension corresponding to a viewport of an application and determine, responsive to detecting a scroll event, that a first offset between a first content document end and a first viewport end is less than or equal to a first predetermined threshold. The script can further cause the client device to determine, responsive to detecting the scroll event, that a second offset between a second content document end and a second viewport end is greater than or equal to a second threshold and assign the scroll event to the inline frame responsive to the determinations of the first and second offsets.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: March 11, 2025
    Assignee: GOOGLE LLC
    Inventors: Tianjiu Yin, Kun Zhang
  • Publication number: 20250077127
    Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.
    Type: Application
    Filed: November 19, 2024
    Publication date: March 6, 2025
    Inventors: Bei QI, Kun ZHANG, Kun DOU, Ruyi ZHANG, Zongyuan ZHANG, Yutao LI, Dan CAO, Tianyi ZHANG
  • Publication number: 20250072157
    Abstract: A method for edge passivation of crystalline silicon-based shingle cells, in which multiple crystalline silicon-based shingle cells are stacked to form a shingle cell group with cut edges thereof co-planar to form a to-be-passivated surface, and then the shingle cell group is placed in a fixing tooling to form a passivation unit. The passivation unit is conveyed by a conveying mechanism to an evaporation and annealing mechanism. A first source material is evaporated at 20-300° C. under vacuum in the evaporation and annealing mechanism to form a first gaseous source material, which is deposited on the to-be-passivated surface to form a first passivation layer. The shingle cell group with the first passivation layer is annealed at 100-350° C. A passivation device for implementing such method is further provided.
    Type: Application
    Filed: November 6, 2024
    Publication date: February 27, 2025
    Inventors: Peixi YANG, Yanghua TIAN, Gang YONG, Yong YANG, Kun ZHANG, Shigeng CHEN
  • Publication number: 20250070066
    Abstract: In certain aspects, a memory device includes a memory structure including memory strings, a first peripheral circuit coupled to the memory structure and including a first transistor including a first gate dielectric layer, a first semiconductor layer in contact with the first transistor, a second peripheral circuit coupled to the memory structure and including a second transistor including a second gate dielectric layer, and a second semiconductor layer in contact with the second transistor. The memory strings are between the first semiconductor layer and the second semiconductor layer in a first direction. A thickness of the first gate dielectric layer is greater than a thickness of the second gate dielectric layer in the first direction.
    Type: Application
    Filed: November 11, 2024
    Publication date: February 27, 2025
    Inventors: Yanhong Wang, Wei Liu, Liang Chen, Zhiliang Xia, Wenxi Zhou, Kun Zhang, Yuancheng Yang
  • Publication number: 20250066350
    Abstract: Disclosed are a class of compounds having a new structure as an ATR inhibitor, and a stereoisomer, an optical isomer, a pharmaceutical salt, a prodrug and a solvate thereof. An in-vitro enzyme inhibitory activity study shows that the compounds have a strong inhibitory effect on an ATR enzyme, and can be used as prospecting compounds for treating ATR-mediated diseases.
    Type: Application
    Filed: December 15, 2022
    Publication date: February 27, 2025
    Applicant: Innovstone Therapeutics Limited
    Inventors: Yunlong Song, Wenqing Xu, Xinyuan MIAO, Kun ZHANG, Dapei LI, Jian CHEN, Wei LI, Kai LU, Hongyan KOU, Disha WANG, Qiangqiang JIANG
  • Patent number: 12234188
    Abstract: A permeable pavement system including a permeable pavement composition and a related method are provided. The permeable pavement system includes a first layer of a permeable pavement composition including a quantity of a first permeable pavement material and a quantity of cured carbon fiber composite material (CCFCM) incorporated therewith, the first layer defining a first surface; and a second layer of a second permeable pavement material deposited over a substantial entirety of and covering the first surface of the first layer of the permeable pavement composition, wherein the first layer interfaces with the second layer to at least strengthen the permeable pavement system.
    Type: Grant
    Filed: October 3, 2023
    Date of Patent: February 25, 2025
    Assignees: THE BOEING COMPANY, WASHINGTON STATE UNIVERSITY
    Inventors: Deborah Ann Taege, Somayeh Nassiri, Karl Richard Englund, Kun Zhang, Justin Yune-Te Lim
  • Patent number: 12228280
    Abstract: A vapor source system based on vapor-liquid ejector supercharging combined with flash vaporization technology belongs to the technical fields of waste heat utilization and steam generation. The system comprises a vapor-liquid ejector, a flash vaporization tank and a intermediate heat exchanger, wherein the vapor-liquid ejector uses high-pressure steam to raise temperature and pressure of low-pressure water absorbed from the flash vaporization tank; the pressure-increased water is flashed into low-pressure saturated steam after entering the flash vaporization tank; the saturated water which is not flashed is collected at the bottom of the flash vaporization tank.
    Type: Grant
    Filed: September 16, 2022
    Date of Patent: February 18, 2025
    Assignees: DALIAN UNIVERSITY OF TECHNOLOGY, Dalian Ocean University
    Inventors: Yong Yang, Xingyao Zhang, Zelong Xie, Yuzhe Zhang, Kun Zhang, Shengqiang Shen
  • Publication number: 20250046815
    Abstract: A tungsten compound is appropriately disposed on a surface of carbon. The negative electrode material is a negative electrode material for a battery that includes amorphous carbon and sodium tungstate is attached on a surface on the amorphous carbon and provided on the surface of the amorphous carbon. The sodium tungstate may have at least one of a cubic crystal and a tetragonal crystal.
    Type: Application
    Filed: October 12, 2022
    Publication date: February 6, 2025
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Naoki Rikita, Yoshinobu Nakada, Jie Tang, Kun Zhang
  • Patent number: 12217144
    Abstract: A deep state space generative model is augmented with intervention prediction. The state space model provides a principled way to capture the interactions among observations, interventions, critical event occurrences, true states, and associated uncertainty. The state space model can include a discrete-time hazard rate model that provides flexible fitting of general survival time distributions. The state space model can output a joint prediction of event risk, observation and intervention trajectories based on patterns in temporal progressions, and correlations between past measurements and interventions.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: February 4, 2025
    Assignee: GOOGLE LLC
    Inventors: Yuan Xue, Dengyong Zhou, Nan Du, Andrew Mingbo Dai, Zhen Xu, Kun Zhang, Yingwei Cui
  • Publication number: 20250029972
    Abstract: In an example, a three-dimensional (3D) memory device includes a stack structure including interleaved conductive layers and dielectric layers, a first semiconductor layer above the stack structure, a second semiconductor layer above the first semiconductor layer, channel structures extending vertically through the stack structure and the first semiconductor layer, and a source contact in contact with the second semiconductor layer.
    Type: Application
    Filed: October 3, 2024
    Publication date: January 23, 2025
    Inventors: Kun ZHANG, Linchun WU, Wenxi ZHOU, Zhiliang XIA, Zongliang HUO
  • Patent number: 12202457
    Abstract: Described are devices, systems and methods for managing a supplemental brake control system in autonomous vehicles. In some aspects, a supplemental brake management system includes brake control hardware and software that operates with a sensing mechanism for determining the brake operational status and a control mechanism for activating the supplemental brake control in an autonomous vehicle, which can be implemented in addition to the vehicle's primary brake control system.
    Type: Grant
    Filed: June 23, 2023
    Date of Patent: January 21, 2025
    Assignee: TUSIMPLE, INC.
    Inventors: Xiaoling Han, Kun Zhang, Yu-Ju Hsu, Frederic Rocha, Zehua Huang, Charles A. Price
  • Patent number: 12205649
    Abstract: A method for data erasing of a non-volatile memory device is disclosed. The memory includes multiple memory cell strings each including a select gate transistor and multiple memory cells that are connected in series. The method comprises applying a step erase voltage to one memory cell string for an erase operation, the step erase voltage having a step-rising shaped voltage waveform. The method further comprises, during a period when the step erase voltage rises from an intermediate level to a peak level, raising a voltage of the select gate transistor from a starting level to a peak level, and raising a voltage of a predetermined region from a starting level to a peak level, such that a gate-induced drain leakage current is generated in the one memory cell string. The predetermined region is adjacent to the at least one select gate transistor and includes at least one memory cell.
    Type: Grant
    Filed: September 22, 2022
    Date of Patent: January 21, 2025
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Tao Yang, Dongxue Zhao, Lei Liu, Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Patent number: 12195798
    Abstract: Presented are methods and compositions for obtaining sequence information from one or more individual cells. The methods are useful for obtaining sequence information for a single nucleotide sequence, and for multiplex generation of sequence information from one or more individual cells.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: January 14, 2025
    Assignees: Illumina, Inc., The Regents of the University of California
    Inventors: Jian-Bing Fan, Kun Zhang
  • Patent number: D1065723
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: March 4, 2025
    Assignee: Yiwu Zhangkun Electronic Commerce Co., Ltd.
    Inventor: Kun Zhang