Abstract: A disclosed example includes accessing, by a backend block service driver in an input/output virtual machine executing on one or more processors, a first command submitted to a buffer by a paravirtualized input/output frontend block driver executing in a guest virtual machine; generating, by the backend block service driver, a translated command based on the first command by translating a virtual parameter of the first command to a physical parameter associated with a physical resource; submitting, by the backend block service driver, the translated command to an input/output queue to be processed by the physical resource based on the physical parameter; and submitting, by the backend block service driver, a completion status entry to the buffer, the completion status entry indicative of completion of a direct memory access operation that copies data between the physical resource and a guest memory buffer corresponding to the guest virtual machine.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack of layers. The stack of layers includes a common source layer, gate layers and insulating layers disposed on a substrate. The gate layers and insulating layers are stacked alternatingly. Then, the semiconductor device includes an array of channel structures formed in an array region. The channel structure extends through the stack of layers and forms a stack of transistors in a series configuration. The channel structure includes a channel layer that is in contact with the common source layer. The common source layer extends over the array region and a staircase region. The semiconductor device includes a contact structure disposed in the staircase region. The contact structure forms a conductive connection with the common source layer.

Abstract: An antenna system includes an antenna body having one or more connection points between the antenna body and a ground; a tunable component having a changeable operating parameter that is a capacitance or a inductance, wherein the antenna body is connected to the tunable component through a first connection point; and a first filter, wherein the first filter are connected to the antenna body; wherein the first filter is connected in parallel with the tunable component, wherein a first end of the first filter is connected to the antenna body through the first connection point, and a second end of the first filter is connected to the ground, and wherein the first filter presents a high impedance characteristic in a low frequency band, and presents a low impedance characteristic in a high frequency band.

Abstract: A hydrogen-bonded organic framework nanosheet, a preparation method and application thereof are provided. The preparation method includes in a small heat-resistant glass container, mixing 1,2,4,5-tetrakis (4-carboxyphenyl) benzene (H4TCPB) with N,N-dimethylformamide (DMF), heating until the solid is dissolved, placing the uncapped small glass container in a large heat-resistant glass container filled with some water, sealing the large glass container, standing and heating the large glass container in a constant-temperature oven to obtain colorless crystals, suction filtering to obtain a solid material, drying, grinding, and then dispersing the solid material in a solvent, performing ultrasonication in an ice-water bath, centrifuging to discard supernatant, and drying to obtain the hydrogen-bonded organic framework nanosheets.

Abstract: A method for data erasing of a non-volatile memory device is disclosed. The memory includes multiple memory cell strings each including a select gate transistor and multiple memory cells that are connected in series. The method comprises applying a step erase voltage to one memory cell string for an erase operation, the step erase voltage having a step-rising shaped voltage waveform. The method further comprises, during a period when the step erase voltage rises from an intermediate level to a peak level, raising a voltage of the select gate transistor from a starting level to a peak level, and raising a voltage of a predetermined region from a starting level to a peak level, such that a gate-induced drain leakage current is generated in the one memory cell string. The predetermined region is adjacent to the at least one select gate transistor and includes at least one memory cell.

Abstract: Techniques are disclosed for implementing cross-zone communication for computing zones executing different coding protocols. A server computer system may receive, via a proxy layer of a first instance of an application executing within a first computing zone according to a first set of coding protocols, a request for a service executed via a second instance of the application in a second computing zone according to a second, different set of coding protocols. The system may alter, via a remote layer of the first instance, a set of data specified in the request to comply with the second, set of protocols. The system may transmit, via the remote layer of the first instance to a remote layer of the second instance, the altered set of data. The system may advantageously provide a simplified development interface allowing for both development and testing within a local environment without deployment of multiple different services.

Abstract: A bottom cylinder for a high-temperature and high-pressure environment simulator of a high-fidelity corer is provided. The bottom cylinder includes a cylinder barrel. The bottom of the cylinder barrel is provided with a cylinder base. The piston is provided inside the cylinder barrel and divides an inner cavity of the cylinder barrel into a rodless cavity and a rod cavity. The piston is provided with a piston rod. The outer wall of the cylinder barrel is provided with an oil inlet hole communicated with the rodless cavity, an oil outlet hole communicated with the rod cavity, and a reserved hole. The lower end surface of the piston is provided with a first buffer ring, and the upper surface of the cylinder base is provided with a second buffer ring mated with the first buffer ring. The bottom cylinder is applied to the simulator for oil and gas resource exploitation.

Abstract: Embodiments of the present disclosure provide a method for controlling a converter and a converter system. The method includes obtaining voltage signals indicating phase voltages of three phases at AC side of a converter, determining, based on the voltage signals, carrier signals of a three-phase switching branches of the converter, wherein carrier signals of two of three phases have the same phase with each other and have a different phase from a carrier signal of the rest phase of the three phases, and magnitude of a phase voltage of the rest phase is between the phase voltages of the two phases, and generating, based on the determined carrier signals and modulation wave signals of the three-phase switching branches, control signals of the three-phase switching branch.

Abstract: A method for analyzing fuselage profile based on measurement data of an aircraft, including: acquiring point-cloud data of an aircraft via a laser scanner; selecting point-cloud data of a fuselage component from the point-cloud data of the aircraft; based on a weighted locally optimal projection (WLOP) operator and Ll median curve-skeleton concept of point cloud, extracting a medial axis from the point-cloud data of the fuselage component; uniformly sampling the medial axis into a plurality of skeleton points; extracting a discrete point set of a cross-section contour of the fuselage component; performing circle fitting on the discrete point set to obtain a fitted circle and parameters thereof; calculating a deformation displacement measurement indicator ? of the cross-section of the fuselage component to evaluate cross-section contour of the fuselage.

Abstract: The disclosure belongs to the technical field of liquid crystal materials, and specifically relates to a polymerizable compound, a preparation method therefor, and the use thereof. The polymerizable compound has a structure as shown in general formula I. Compared with the existing polymerizable RM, the polymerizable compound has the advantages of a good solubility, a faster polymerization rate, a more complete extent of polymerization, and less residues, thereby improving the problem of poor display to a great extent.

Abstract: The invention discloses a ternary positive electrode material coated with nitride/graphitized carbon nanosheets and preparation method thereof. The ternary positive electrode material coated with nitride/graphitized carbon nanosheets includes a ternary positive electrode material matrix and a coating layer; the coating layer is composed of nitride and graphitized carbon; and the graphitized carbon is formed in situ in the coating process of the nitride. Compared with a physical mixing method, the in-situ generated carbon layer is connected to the material matrix more tightly, and the formed conductive network is denser. So that the rate performance of the material is improved to the maximum extent. The preparation method is simple and easy to realize industrial production. And the obtained ternary positive electrode material coated with nitride/graphitized carbon nanosheets has excellent rate performance and cycling stability.

Abstract: Disclosed are an emergency control method and system based on source-load-storage regulation and cutback. According to the method, output power of power generating sources is regulated according to a power regulating quantity and a frequency regulation requirement, an output power compensation and output frequency of each power generating source are maintained within permissible ranges, so that a balance between power supply and demand of a power distribution network is maintained; and standby energy-storage power stations are used to make up a power gap, and an external power supply system is used to assist in making up a power deficiency, so that large load disturbance can be handled make up the power gap.

Abstract: A back passivation crystalline silicon solar cell includes an Ag gate finger electrode, a SiNx passivation antireflection layer, an N+ layer, P-type silicon, a back passivation layer, and an Al gate finger electrode, connected sequentially from top to bottom. The Ag gate finger electrode sequentially penetrates through the SiNx passivation antireflection layer and the N+ layer and is connected to the P-type silicon by means of an N++ layer. The Al gate finger electrode penetrates through the back passivation layer and is connected to the P-type silicon by a P+ layer. The back passivation layer is a passivation antireflection laminated structure that includes a SiO2 passivation layer, an AlOx passivation layer, a SiNx antireflection layer, and a SiOxNy antireflection layer, sequentially provided from top to bottom. The solar cell has high carrier selectivity, high temperature stability, excellent interface passivation effect and PID resistance, high conversion efficiency and high stability.

Abstract: The present invention relates to a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer and a preparation method thereof. The ?LED light-emitting and display device includes one or more light-emitting pixels, and each light-emitting pixel includes a pixel lower electrode, a lower insulation layer, a ?LED chip, an upper insulation layer and a pixel upper electrode from bottom to top, wherein the upper insulation layer and the lower insulation layer prevent the ?LED chip from being in direct electrical contact with the pixel lower electrode and the pixel upper electrode, and the ?LED chip is lit by an alternating electric field through electromagnetic coupling.

Abstract: A three-dimensional (3D) memory device includes a stack structure including interleaved first conductive layers and first dielectric layers, and a channel structure extending through the stack structure along a first direction in contact with a first semiconductor layer at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The semiconductor channel includes an angled structure, and a first width of the semiconductor channel at the bottom portion of the channel structure below the angled structure is smaller than a second width of the semiconductor channel at an upper portion of the channel structure above the angled structure.

Abstract: Provided are a method and apparatus for processing map information, a device, and a storage medium which relate to the field of computer technology and, in particular, to the fields of intelligent transportation and computer vision technology. The specific implementation includes that an object in an image for query is recognized to obtain an object recognition result and that a target point of interest matching the image for query is selected from at least one candidate point of interest of an electronic map according to the object recognition result.

Abstract: A system for predicting and summarizing medical events from electronic health records includes a computer memory storing aggregated electronic health records from a multitude of patients of diverse age, health conditions, and demographics including medications, laboratory values, diagnoses, vital signs, and medical notes. The aggregated electronic health records are converted into a single standardized data structure format and ordered arrangement per patient, e.g., into a chronological order. A computer (or computer system) executes one or more deep learning models trained on the aggregated health records to predict one or more future clinical events and summarize pertinent past medical events related to the predicted events on an input electronic health record of a patient having the standardized data structure format and ordered into a chronological order.

Abstract: The present invention relates to the technical field of fault location of distributed energy resources connected flexible DC distribution network, and disclosed a fault location method, system and application of bipolar short-circuit of two-level VSC-type photovoltaic-connected flexible DC distribution network, wherein, directions of positive currents of DC feeders during fault are used to locate a fault section; a bipolar short-circuit distance measurement model covering interactions and responses of systems is established according to equivalent circuits of transient periods; and fault location is done by obtaining a distance to fault with electric parameters and information of the fault.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure, a second semiconductor structure opposite to the first semiconductor structure, and an interface layer between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a memory stack having a plurality of interleaved stack conductive layers and stack dielectric layers. The second semiconductor structure includes a plurality of peripheral circuits electrically connected to the memory stack. The interface layer includes single crystalline silicon and a plurality of interconnects between the memory stack and the peripheral circuits.