Abstract: The present invention relates to the technical field of hydrogen fuel power generation, specifically a hydrogen fuel high-speed rotating magnetohydrodynamic power generation device. The device comprises a shaft portion, a cover plate portion, a thin plate portion and a combustion propelling portion. The device craftily utilizes hydrogen electrochemical reaction and direct combustion of unionized hydrogen to complete the hydrogen catalytic ionization reaction while providing jet thrust for rotation. Advantages are that it is more efficient than hydrogen fuel cells, has high power density, which is suitable for high-power and high-energy power needs, utilizes no key special components and does not require auxiliary systems such as heat dissipation, breaking limitations of proton exchange membrane on hydrogen fuel cells and low efficiency of a Carnot cycle on hydrogen internal combustion engines.

Abstract: The present disclosure discloses a child safety seat, which is for being installed on a vehicle seat. The child safety seat includes a base having an anchor part connected to the vehicle seat; a seat coupled to the base; a top rod fixed to the rear of the base; a tether assembly including a top tether and a tether fixing portion that are connected with each other, the top tether being connected with the top rod and the tether fixing portion being connected with the vehicle seat; and an alarm device including a switch which can be triggered when the top tether is tightened. The present disclosure also discloses a tether assembly and a support structure. The child safety seat can conveniently prompt that it is not correctly fixed, and can be conveniently fixed and adjusted, thereby improving the safety and riding comfort of the child safety seat.

Abstract: A method and apparatus for storing liquid gases, such as liquid hydrogen, is provided. The liquid gas container includes multiple layers of insulation to enable non-vacuum insulation to be utilized while reducing cryopumping. An inner insulation layer is formed of a material which as a closed-cell structure and is thick enough such that the temperature at an outer surface of the inner insulation layer is greater than the boiling point of a gas within the outer insulation layer. The outer insulation layer may have an open-cell structure for the insulation material.

Abstract: The present disclosure provides a three-dimensional (3D) memory. The 3D memory may include a stack structure including gate layers and dielectric layers disposed alternately. The stack structure may include a step structure including a plurality of staircase structures disposed in a first direction and having different heights in a second direction. The 3D memory may include a plurality of first stops disposed in the first direction and located on the plurality of steps of at least one of the staircase structures, with each of the plurality of first stops disposed on the corresponding step of the plurality of steps. The 3D memory may include a protection layer covering the step structure and the first stops. The 3D memory may include a plurality of contact posts each extending through the protection layer and the first stop and being connected with the gate layer in the step corresponding to the first stop.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first and the second semiconductor structures. The first semiconductor structure includes an array of NAND memory strings, a first peripheral circuit of the array of NAND memory strings including a first transistor, a polysilicon layer between the array of NAND memory strings and the first peripheral circuit, and a first semiconductor layer in contact with the first transistor. The polysilicon layer is in contact with sources of the array of NAND memory strings. The second semiconductor structure includes a second peripheral circuit of the array of NAND memory strings including a second transistor, and a second semiconductor layer in contact with the second transistor. The second semiconductor layer is between the bonding interface and the second semiconductor layer.

Abstract: The present application provides a support structure, including: a support body; and at least one buffer portion, provided within the support body, where the buffer portion includes a plurality of buffer blocks provided adjacent to each other; where at least one first slit is provided on a support surface of the buffer portion, the first slit divides the buffer portion into the plurality of the buffer blocks, and the plurality of the buffer blocks are connected to each other at at least one position of the buffer portion other than the support surface. The present application further provides a seat cushion structure and a child safety seat.

Abstract: A semiconductor device includes a first dielectric layer, a source layer at a first side of the first dielectric layer and in contact with the first dielectric layer, a second dielectric layer at a second side opposite to the first side of the first dielectric layer and in contact with the first dielectric layer, a source contact structure extending vertically through the second dielectric layer and the first dielectric layer, and extending into the source layer and without penetrating through the source layer, a stack including interleaved stack conductive layers and stack third dielectric layers, the source layer being located between the first dielectric layer and the stack in a vertical direction, a channel structure extending vertically through the stack and the source layer, and an insulating structure extending vertically through the stack into the source layer.

Abstract: Disclosed in the present disclosure are a positive electrode material precursor and a positive electrode material and preparation methods therefor, and a sodium-ion battery. The positive electrode material precursor comprises an inner core and a shell wrapping the periphery of the inner core, wherein the inner core is NixFeyMn1-x-y(OH)2, where 0.2?x?0.7, and 0.2?y?0.5; the shell is MaMn1-a(OH)2, where M is nickel or iron, and 0.05?a?0.7; and both the inner core and the shell are formed by stacking flaky primary particles.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes an array of memory cells and a first semiconductor layer in contact with sources of the array of NAND memory strings. The second semiconductor structure includes a second semiconductor layer, a first peripheral circuit of the array of memory cells including a first transistor in contact with a first side of the second semiconductor layer, and a second peripheral circuit of the array of NAND memory strings including a second transistor in contact with a second side of the second semiconductor layer opposite to the first side.

Abstract: A head propeller of the flying vehicle compresses incoming flow at a vehicle head inside an upper duct to a lower duct through an air suction channel. A portion of airflow is compressed to the lower duct through the air suction channel under an action of a guide plate and a vehicle body propeller. A bottom propeller of the flying vehicle compresses an airflow into pressure bins of the lower duct at a lower portion through the air suction channel. A sealing state of the pressure bins of the lower duct is destroyed. High-pressure airflow inside the lower duct is jetted out from an air outlet channel to the upper duct. A tail propeller guides the airflow to the tail portion of the vehicle body. The upper duct and the lower duct are constructed inside the pipeline, so a running resistance of the flying vehicle is reduced.

Abstract: Compositions and methods for making a plurality of probes for analyzing a plurality of nucleic acid samples are provided. Compositions and methods for analyzing a plurality of nucleic acid samples to obtain sequence information in each nucleic acid sample are also provided.

Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.

Abstract: Methods, devices, and systems for three-dimensional (3D) memory devices are provided. In one aspect, a method for forming a three-dimensional (3D) semiconductor device includes: forming a first stack structure including a plurality of alternating sacrificial layers and dielectric layers, the first stack structure having a first region and a second region; forming gate line slits extending through the first stack structure in the first region and the second region; forming a contact via extending to a target sacrificial layer in the second region; forming cavities coupled to the contact via through the gate line slits; and forming conductive layers in replace of the sacrificial layers in the cavities and a contact in the contact via by depositing a conductive material in the contact via and the cavities. The 3D semiconductor device includes a second stack structure having the conductive layers and the dielectric layers.

Abstract: Performance of a negative electrode material is improved. The negative electrode material is a negative electrode material for a battery that includes carbon, sodium tungstate provided on a surface of the carbon, and silicon provided on the surface of the carbon.

Abstract: A method for calculating a surface relaxation rate of a shale includes: a relaxation time T distribution curve and a pore throat radius r distribution curve are obtained through experiments; abscissas of the two distribution curves are standardized, and the abscissa of the relaxation time T distribution curve is expanded or shrunk to ensure an abscissa value corresponding to a maximum ordinate value in the transformed relaxation time T distribution curve is same as an abscissa value corresponding to a maximum ordinate value in the pore throat radius r distribution curve; straight lines with a number of N parallel to a y-axis of a combined curve graph including the two distribution curves are drawn and a ? value corresponding to each straight line is calculated; and ? value with the number of N are processed to obtain a final surface relaxation rate ??.

Abstract: A log-structured merge-tree (LSM-Tree) based key-value (KV) data storage method includes writing KV data into a NAND flash memory. The KV data includes a key-value pair including a key and a corresponding value. The KV data is stored in a key-value solid state drive (KVSSD), which includes a storage class memory (SCM) and the NAND flash memory. The method further includes storing metadata of the KV data in the SCM. The metadata of the KV data includes the key and index information of the corresponding value of the KV data, and the index information of the corresponding value of the KV data indicates address information of the KV data in the NAND flash memory.

Abstract: A method for combined characterization of pore structure includes steps as follows. Firstly, CO2, N2 and high-pressure mercury intrusion porosimetry characterization curves are plotted based on actual measurement data, then, average values of the overlapping range of the CO2 and N2 characterization curves are calculated, and a function yi?=ƒ(x) is fitted. Each pore volume yi? corresponding to each pore diameter xi is calculated, and a curve is plotted with xi as a horizontal coordinate and yi? as a vertical coordinate, thereby obtaining a characterization curve of the overlapping range between CO2 and N2 adsorptions. The same data processing is used to process the overlapping range data of the N2 and high-pressure mercury intrusion porosimetry characterization curves, to obtain the characterization curve between them. The characterization curves are spliced with the original CO2, N2, and high-pressure mercury intrusion porosimetry characterization curves to obtain a combined characterization curve.

Abstract: In certain aspects, a semiconductor device includes a substrate and a first transistor. The first transistor includes a first well in the substrate and having a recess, a recess gate structure including a protrusion structure, and a first source and a first drain spaced apart by the recess gate structure. The protrusion structure extends into the recess of the first well. The recess gate structure includes a first gate dielectric and a first gate electrode on the first gate dielectric.

Abstract: Examples of the present disclosure provide a semiconductor device, a manufacturing method thereof, and a memory system. The semiconductor device comprises: a stacking structure comprising a memory array area and a first sealing area; and at least one circle of sealing structure in the first sealing area and surrounding the memory array area, wherein the sealing structure comprises a sealing ring body penetrating through the stacking structure and at least two circles of first dummy interconnection structures connected with the sealing ring body.