Abstract: A semiconductor device includes an insulating layer, a conductive layer stacking with the insulating layer and including a first conductive sublayer and a second conductive sublayer, a memory stack disposed on a side of the conductive layer away from the insulating layer, a spacer structure through the conductive layer, a contact structure in the spacer structure and extending vertically through the insulating layer, and a channel structure including a semiconductor channel. The contact structure includes a first contact portion and a second contact portion in contact with each other. A lateral cross-sectional area of the second contact portion is greater than a lateral cross-sectional area of the first contact portion. A portion of the semiconductor channel is in contact with the first conductive sublayer. The second conductive sublayer is disposed between the first conductive sublayer and the memory stack.

Abstract: The present disclosure discloses a base assembly and a child safety seat for a vehicle. The base assembly includes a base; a supporting leg; a sliding element telescopically disposed on the base, the supporting leg being pivotally connected to the sliding element and extends and retracts together with the sliding element; and a traction element configured to pull the supporting leg to move towards the base as the supporting leg rotating from an unfolded position to a folded position. The base assembly and the child safety seat provided by the present disclosure simplify the operation of a user, so that the operation is simple and convenient, and the user's experience is good.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first semiconductor layer, an array of NAND memory strings, and a first peripheral circuit of the array of NAND memory strings. Sources of the array of NAND memory strings are in contact with a first side of the first semiconductor layer. The first peripheral circuit includes a first transistor in contact with a second side of the first semiconductor layer opposite to the first side. The second semiconductor structure includes a second semiconductor layer and a second peripheral circuit of the array of NAND memory strings. The second peripheral circuit includes a second transistor in contact with the second semiconductor layer.

Abstract: The present disclosure provides a folding mechanism suitable for a baby carrier. The baby carrier includes a first part and a second part. The first part and the second part are arranged in a longitudinal direction. The folding mechanism includes a connecting element. The second part is movably connected to the first part through the connecting element, and an extending direction of the connecting element is parallel to the longitudinal direction.

Abstract: A data processing method for a log structured merge (LSM) tree includes selecting SST files to be compressed and merged in a current layer and a next layer, sequentially reading the SST files to be compressed and merged in the current layer and the next layer from a first storage device and sequentially writing the SST files in a second storage device, randomly reading the SST files to be compressed and merged from the second storage device into a memory according to key sequence numbers of data blocks included in the SST files to be compressed and merged, and performing compression and merge processing on the SST files to be compressed and merged. Sequential and random read and write speed of the second storage device is higher than that of the first storage device.

Abstract: A 3D memory device includes a memory stack including interleaved stack conductive layers and stack dielectric layers, a semiconductor layer, and a channel structure extending vertically through the memory stack into the semiconductor layer. A first lateral dimension of a first portion of the channel structure facing the semiconductor layer is greater than a second lateral dimension of a second portion of the channel structure facing the memory stack. The channel structure includes a memory film and a semiconductor channel A first doping concentration of part of the semiconductor channel in the first portion of the channel structure is greater than a second doping concentration of part of the semiconductor channel in the second portion of the channel structure.

Abstract: Embodiments of methods for forming contact structures and semiconductor devices thereof are disclosed. In an example, a method for forming a semiconductor device includes forming a spacer structure from a first surface of the base structure into the base structure, forming a first contact portion surrounded by the spacer structure, and forming a second contact portion in contact with the first contact portion. The second contact extends from a second surface of the base structure into the base structure.

Abstract: A port processing method, used to enhance an electrostatic discharge protection capability and an overstress protection capability. The method comprises: step S1, providing a cable having a plurality of terminal contact cores leading out of the cable, the plurality of terminal contact cores comprising contact cores disposed at two sides of the cable, and signal cores disposed within the cable; and S2, changing the signal layout of the contact cores and the signal cores, so as to enhance the electrostatic discharge protection capability and the overstress protection capability. The method for changing the signal layout comprises: using the contact cores as a signal ground, and disposing a contact spring plate at a middle portion of each of the contact cores and each of the signal cores; and extending lengths of the contact cores outward.

Abstract: Aspects of the disclosure provide a semiconductor device and method. An example method include forming a stack of layers on a substrate, the stack of layers including a source sacrificial layer, a conductive layer, gate sacrificial layers and insulating layers; forming a staircase into the stack of layers in a staircase region that is adjacent to an array region; forming channel structures in the array region, a channel structure including a channel layer surrounded by one or more insulating layers and extending into the stack of layers; replacing the source sacrificial layer with a source layer in conductive connection with the channel layer, the source layer and the conductive layer forming a common source layer; replacing the gate sacrificial layers with gate layers; and forming a first contact structure in the staircase region, the first contact structure forming a conductive connection with the common source layer.

Abstract: Devices, systems, and methods for a vehicular safety system in autonomous vehicles are described. An example method for safely controlling a vehicle includes selecting, based on a first control command from a first vehicle control unit, an operating mode of the vehicle, and transmitting, based on the selecting, the operating mode to an autonomous driving system, wherein the first control command is generated based on input from a first plurality of sensors, and wherein the operating mode corresponds to one of (a) a default operating mode, (b) a minimal risk condition mode of a first type that configures the vehicle to pull over to a nearest pre-designated safety location, (c) a minimal risk condition mode of a second type that configures the vehicle to immediately stop in a current lane, or (d) a minimal risk condition mode of a third type that configures the vehicle to come to a gentle stop.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes an insulating layer, a semiconductor layer, a memory stack including interleaved conductive layers and dielectric layers, a source contact structure extending vertically through the insulating layer from an opposite side of the insulating layer with respect to the semiconductor layer to be in contact with the semiconductor layer, and a channel structure extending vertically through the memory stack and the semiconductor layer into the insulating layer or the source contact structure.

Abstract: The present disclosure relates to a high and low pressure manifold fluid supply system for fracturing units, including: a trailer, a high and low pressure manifold arranged on the trailer, a support frame arranged on a platform of the trailer, and a power distribution switch cabinet arranged on the support frame, which is configured to be electrically connected to the electrically-driven fracturing units and configured to distribute electricity to the electrically-driven fracturing units. Through the high and low pressure manifold fluid supply system integrated with electricity supply facilities therein according to the present disclosure, the electrically-driven fracturing units are powered, in this way, the electricity supply and distribution system in the well site can be effectively simplified, the connection distance of the cables can be shorten, and further the time spent on connection can be saved, thereby improving the well site layout efficiency.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a peripheral circuit on the substrate, a memory stack including interleaved conductive layers and dielectric layers above the peripheral circuit, an N-type doped semiconductor layer above the memory stack, a plurality of channel structures each extending vertically through the memory stack into the N-type doped semiconductor layer, a conductive layer in contact with upper ends of the plurality of channel structures, at least part of which is on the N-type doped semiconductor layer, and a source contact above the memory stack and in contact with the N-type doped semiconductor layer.

Abstract: A low-voltage user demand response interaction apparatus and an operation method therefor. The apparatus comprises an electrical loop, a mechanical switch, a protection module, a data collection module, a control processor, a power supply module, a communication module, a load identification module, a blockchain module and a demand response module, wherein the mechanical switch is connected to the electrical loop; the protection module is connected to the mechanical switch; the control processor is connected to the protection module; the load identification module, the blockchain module and the demand response module are respectively connected to the control processor; the data collection module is connected to the electrical loop, and transmits data to the control processor; and the communication module and the power supply module are respectively connected to the control processor.

Abstract: A rapid detection tool for a coaxial relationship based on a photosensitive material and a detection method using the same are used to detect coaxiality of two through-holes in the same workpiece to be detected. An image processing unit and a control unit are mounted outside a light-shielding box. Light sources, cameras, sensors, and an air cylinder are mounted in the light-shielding box. A photosensitive plate coated with a photosensitive resin is placed between the two holes, and two sides are irradiated by the light sources. Coordinates of centers of circular patterns formed on the photosensitive plate are calculated so that a coaxial relationship between the two holes can be accurately obtained. An output rod of the air cylinder is controlled to extend outward to reject a workpiece to be detected not meeting requirements.

Abstract: The invention discloses a ternary positive electrode material coated with nitride/graphitized carbon nanosheets and preparation method thereof. The ternary positive electrode material coated with nitride/graphitized carbon nanosheets includes a ternary positive electrode material matrix and a coating layer; the coating layer is composed of nitride and graphitized carbon; and the graphitized carbon is formed in situ in the coating process of the nitride. Compared with a physical mixing method, the in-situ generated carbon layer is connected to the material matrix more tightly, and the formed conductive network is denser. So that the rate performance of the material is improved to the maximum extent. The preparation method is simple and easy to realize industrial production. And the obtained ternary positive electrode material coated with nitride/graphitized carbon nanosheets has excellent rate performance and cycling stability.

Abstract: This disclosure is directed to methods for performing operations on a memory device. The memory device can include a bottom select gate, a plate line above the bottom select gate, a word line above the plate line, a pillar extending through the bottom select gate, the plate line, and the word line, a source line under the pillar, a drain cap above the pillar and a bit line formed above the drain cap. The method can include applying a first positive voltage bias to the bottom select gate and applying a second positive voltage bias to the word line. The method can also include applying a third positive voltage bias to the bit line after the word line reaches the second positive voltage bias. The method can further include applying a ground voltage to the word line and applying the ground voltage to the bit line.

Abstract: Three-dimensional (3D) memory devices and fabricating methods are disclose. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The third semiconductor structure is sandwiched between the first semiconductor structure and the fourth semiconductor structure, and the fourth semiconductor is sandwiched between the second semiconductor structure and the third semiconductor structure.

Abstract: Three-dimensional (3D) memory devices and fabricating methods are disclosed. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The third semiconductor structure and the fourth semiconductor structure are sandwiched between the first semiconductor structure and the second semiconductor structure in a vertical direction.