Patents by Inventor Kun Zhang

Kun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230153006
    Abstract: A data processing method for a log structured merge (LSM) tree includes selecting SST files to be compressed and merged in a current layer and a next layer, sequentially reading the SST files to be compressed and merged in the current layer and the next layer from a first storage device and sequentially writing the SST files in a second storage device, randomly reading the SST files to be compressed and merged from the second storage device into a memory according to key sequence numbers of data blocks included in the SST files to be compressed and merged, and performing compression and merge processing on the SST files to be compressed and merged.
    Type: Application
    Filed: May 17, 2022
    Publication date: May 18, 2023
    Inventors: KUN ZHANG, ZHAO CHEN, KUN DOU, BEI QI, ZHIJUN LIU
  • Publication number: 20230142290
    Abstract: This disclosure is directed to methods for performing operations on a memory device. The memory device can include a bottom select gate, a plate line above the bottom select gate, a word line above the plate line, a pillar extending through the bottom select gate, the plate line, and the word line, a source line under the pillar, a drain cap above the pillar and a bit line formed above the drain cap. The method can include applying a first positive voltage bias to the bottom select gate and applying a second positive voltage bias to the word line. The method can also include applying a third positive voltage bias to the bit line after the word line reaches the second positive voltage bias. The method can further include applying a ground voltage to the word line and applying the ground voltage to the bit line.
    Type: Application
    Filed: December 30, 2021
    Publication date: May 11, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: DongXue ZHAO, Tao Yang, Yuancheng Yang, Lei Liu, Di Wang, Kun Zhang, Wenxi Zhou, Zhiliang Xia, ZongLiang Huo
  • Patent number: 11647632
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack, a first semiconductor layer, a supporting structure, a second semiconductor layer, and a plurality of channel structures. The memory stack includes vertically interleaved conductive layers and dielectric layers and has a core array region and a staircase region in a plan view. The first semiconductor layer is above and overlaps the core array region of the memory stack. The supporting structure is above and overlaps the staircase region of the memory stack. The supporting structure and the first semiconductor layer are coplanar. The second semiconductor layer is above and in contact with the first semiconductor layer and the supporting structure. Each channel structure extends vertically through the core array region of the memory stack and the first semiconductor layer into the second semiconductor layer.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: May 9, 2023
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Kun Zhang, Linchun Wu, Zhong Zhang, Wenxi Zhou, Zongliang Huo
  • Publication number: 20230138575
    Abstract: Methods for thermal treatment on a semiconductor device is disclosed. One method includes obtaining a pattern of a treatment area having amorphous silicon, aligning a laser beam with the treatment area, the laser beam in a focused laser spot having a spot area equal to or greater than the treatment area, and performing a laser anneal on the treatment area by emitting the laser beam towards the treatment area for a treatment period.
    Type: Application
    Filed: December 1, 2021
    Publication date: May 4, 2023
    Inventors: Kun ZHANG, Lei LIU, Yuancheng YANG, Wenxi ZHOU, Zhiliang XIA
  • Publication number: 20230132530
    Abstract: Aspects of the disclosure provide a method for semiconductor device fabrication. The method includes forming a vertical structure in a stack of layers with an end in a first layer by processing on a first side of a first die. The first layer has a better etch selectivity to the stack of layers than a second layer. The method further includes replacing the first layer with the second layer by processing on a second side of the first die that is opposite to the first side.
    Type: Application
    Filed: December 23, 2021
    Publication date: May 4, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: LinChun WU, Kun ZHANG, Wenxi ZHOU, ZhiLiang XIA, ZongLiang HUO
  • Publication number: 20230138251
    Abstract: A method for fabricating a three-dimensional memory includes forming a first stack substrate on a substrate. The method also includes forming bottom select gate cuts through the first stack structure, and forming first sacrificial layers within the bottom select gate cuts. The method further includes forming a second stack structure covering the first sacrificial layers and the first stack structure. Both the first stack structure and the second stack structure include alternately stacked dielectric layers and gate sacrificial layers. The method further includes replacing the first sacrificial layers with first conductive layers, and replacing the gate sacrificial layers with gate conductive layers. The method further includes forming trenches exposing the first conductive layers on the side of the first stack structure far away from the second stack structure. The method further includes replacing the first conductive layers with insulating layers via the trenches.
    Type: Application
    Filed: December 27, 2022
    Publication date: May 4, 2023
    Inventors: Linchun Wu, Kun Zhang
  • Publication number: 20230139243
    Abstract: Provided are a method and apparatus for processing map information, a device, and a storage medium which relate to the field of computer technology and, in particular, to the fields of intelligent transportation and computer vision technology. The specific implementation includes that an object in an image for query is recognized to obtain an object recognition result and that a target point of interest matching the image for query is selected from at least one candidate point of interest of an electronic map according to the object recognition result.
    Type: Application
    Filed: September 9, 2022
    Publication date: May 4, 2023
    Inventors: Jia ZHAO, Meng XU, Kun ZHANG
  • Patent number: 11639177
    Abstract: Techniques are described for estimating road friction between a road and tires of a vehicle. A method includes receiving, from a temperature sensor on a vehicle, a temperature value that indicates a temperature of an environment in which a vehicle is operated, determining a first range of friction values that quantify a friction between a road and tires of a vehicle based on a function of the temperature value and an extent of precipitation in a region that indicate a hazardous driving condition, obtaining, from the first range of friction values, a value that quantifies the friction between the road and the tires of the vehicle, where the value is obtained based on a driving related behavior of the vehicle, and causing the vehicle to operate on the road based on the value obtained from the first range of friction values.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: May 2, 2023
    Assignee: TUSIMPLE, INC.
    Inventors: Kun Zhang, Xiaoling Han, Weina Mao, Zehua Huang, Charles A. Price
  • Publication number: 20230131174
    Abstract: In an example, a method for forming a three-dimensional (3D) memory device is disclosed. A semiconductor layer is formed. A memory stack on the semiconductor is formed. A channel structure extending through the memory stack and the semiconductor layer is formed. An end of the channel structure abutting the semiconductor layer is exposed. A portion of the channel structure abutting the semiconductor layer is replaced with a semiconductor plug.
    Type: Application
    Filed: December 23, 2022
    Publication date: April 27, 2023
    Inventors: Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Publication number: 20230129847
    Abstract: A method, an apparatus, a device, and a storage medium for issuing and replying to multimedia content are provided here. The method described herein for issuing multimedia content comprises: receiving push content associated with a user, the push content being generated based on an the occurrence of a personalized event associated with the user; presenting the push content to the user, the push content comprising video content related to the personalized event; and issuing multimedia content associated with the personalized event based on an operation on the push content by the user, the multimedia content being generated based on the push content. According to the embodiments of the present disclosure, it can effectively help a user to create multimedia content associated with a personalized event, reduce the time cost for the user, and can effectively guide interaction between users, thereby improving user experience.
    Type: Application
    Filed: December 22, 2022
    Publication date: April 27, 2023
    Inventors: Jiannan XU, Weiyi CHANG, Chenlai FU, Minghong DUAN, Kun ZHANG, Shaohua YANG, Weibin XIE
  • Publication number: 20230118742
    Abstract: A semiconductor device includes an insulating layer, a conductive layer stacking with the insulating layer, a spacer structure through the conductive layer and in contact with the insulating layer, a contact structure in the spacer structure and extending vertically through the insulating layer, and a channel structure including a semiconductor channel, a portion of the semiconductor channel being in contact with the conductive layer. The contact structure includes a first contact portion and a second contact portion in contact with each other.
    Type: Application
    Filed: December 16, 2022
    Publication date: April 20, 2023
    Inventors: Linchun Wu, Kun Zhang, Zhong Zhang, Wenxi Zhou, Zhiliang Xia
  • Publication number: 20230115194
    Abstract: A three-dimensional (3D) memory device is disclosed. The 3D memory device includes a memory stack, a semiconductor layer above the memory stack, a plurality of channel structures each extending vertically through the memory stack, and a source contact above the memory stack and in contact with the semiconductor layer. A semiconductor plug, in contact with the semiconductor layer, surrounds an end of one of the channel structures. The source contact is electrically connected with the one of the channel structures. At least a portion of the source contact is buried within the semiconductor layer.
    Type: Application
    Filed: December 14, 2022
    Publication date: April 13, 2023
    Inventors: Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Patent number: 11626416
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A sacrificial layer above a second semiconductor layer at a first side of a substrate and a dielectric stack on the sacrificial layer are subsequently formed. A channel structure extending vertically through the dielectric stack and the sacrificial layer into the second semiconductor layer is formed. The sacrificial layer is replaced with a first semiconductor layer in contact with the second semiconductor layer. The dielectric stack is replaced with a memory stack, such that the channel structure extends vertically through the memory stack and the first semiconductor layer into the second semiconductor layer. A source contact is formed at a second side opposite to the first side of the substrate to be in contact with the second semiconductor layer.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: April 11, 2023
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Kun Zhang, Linchun Wu, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Patent number: 11621275
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved stack conductive layers and stack dielectric layers, a semiconductor layer, a plurality of channel structures each extending vertically through the memory stack into the semiconductor layer, and an insulating structure extending vertically through the memory stack and including a dielectric layer doped with at least one of hydrogen or an isotope of hydrogen.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: April 4, 2023
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Kun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
  • Publication number: 20230096906
    Abstract: A data processing method includes: collecting test data of a target rock sample in different gas adsorption experiments; the test data including pore sizes and pore volumes corresponding to the pore sizes and including at least two selected from the group consisting of the test data with pore sizes less than 3 nm in CO2 adsorption experiment, the test data with pore sizes in 1.5 nm to 250 nm in N2 adsorption experiment and the test data with pore sizes in 10 nm to 1000 ?m in high-pressure mercury adsorption experiment; and fitting the test data in overlapping ranges of the pore sizes using a least square method, and obtaining target pore volumes corresponding to the pore sizes respectively. The accuracy of joint characterization of shale pore structures can be improved by using mathematical methods to process the data in overlapping ranges of pore sizes among different characterization methods.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 30, 2023
    Inventors: Kun Zhang, Shu Jiang, Jun Peng, Xiaoming Zhao, Bin Li, Lei Chen, Pei Liu, Xuejiao Yuan, Fengli Han, Xueying Wang
  • Publication number: 20230086425
    Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.
    Type: Application
    Filed: November 23, 2022
    Publication date: March 23, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Zhongwang SUN, Guangji LI, Kun ZHANG, Ming HU, Jiwei CHENG, Shijin LUO, Kun BAO, Zhiliang XIA
  • Publication number: 20230085124
    Abstract: A mixing system and a mixing method are provided. The mixing system includes a main pump and at least one mixing apparatus. Each mixing apparatus includes a main pipeline, a premixing device and a shearing-mixing device. The main pipeline has a liquid inlet end communicated with the main pump and is configured to convey main liquid, and the main pipeline includes a first liquid outlet end and a second liquid outlet end. The premixing device has an input end communicated with the first liquid outlet end and is configured to premix the main liquid with powder to obtain premixed liquid. The shearing-mixing device is communicated with an output end of the premixing device to obtain the premixed liquid, and is provided with a first shearing-mixing liquid inlet communicated with the second liquid outlet end to obtain the main liquid, so that mixed liquid is obtained.
    Type: Application
    Filed: March 18, 2022
    Publication date: March 16, 2023
    Applicant: YANTAI JEREH PETROLEUM EQUIPMENT & TECHNOLOGIES CO., LTD.
    Inventors: Jifeng ZHONG, Liang LV, Kun ZHANG, Chuanbo WANG, Yipeng WU, Chunqiang LAN
  • Patent number: 11600633
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The slit structure includes a contact including a first contact portion and a second contact portion above the first contact portion and having a different material of the first contact portion. An upper end of the second contact portion of the slit structure is flush with an upper end of the channel local contact.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: March 7, 2023
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Jianzhong Wu, Kun Zhang, Tingting Zhao, Rui Su, Zhongwang Sun, Wenxi Zhou, Zhiliang Xia
  • Patent number: 11601703
    Abstract: A system and method provides video recommendations for a target video in a video sharing environment. The system selects one or more videos that are on one or more video playlists together with the target video. The video co-occurrence data of the target video associates the target video and another video on one or more same video playlists and frequency of the target video and another video on the video playlists is computed. Based on the video co-occurrence data of the target video, one or more co-occurrence videos are selected and ranked based on the video co-occurrence data of the target video. The system selects one or more videos from the co-occurrence videos as video recommendations for the target video.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: March 7, 2023
    Assignee: Google LLC
    Inventors: Li Wei, Kun Zhang, Yu He, Xinmei Cai
  • Patent number: D981979
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: March 28, 2023
    Assignee: ONEPLUS TECHNOLOGY (SHENZHEN) CO., LTD.
    Inventors: Kun Zhang, Jinglin Cai